SPU10N10 Search Results

SPU10N10 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SPU10N10		Infineon Technologies	Power MOSFET, 100V, I-PAK, RDSon=0.2 ?, 10A, NL		Original	PDF
SPU10N10		Siemens			Original	PDF
SPU10N10		Siemens	SIPMOS Power Transistor		Original	PDF
SPU10N10		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF

SPU10N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SPU10N10 Abstract: P-TO252 SPD10N10 Text: SPD10N10 Preliminary data SPU10N10 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD10N10 100 V 10 A 0.2 Ω P-TO252 C67078-S. . . - . . SPU10N10 100 V 10 A	Original	PDF	SPD10N10 SPU10N10 P-TO252 C67078-S. P-TO251 23/Jan/1998 SPU10N10 P-TO252 SPD10N10
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	PDF	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
10N10 Abstract: P-TO252 SPD10N10 SPU10N10 Text: SPD 10N10 Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.2 Ω Continuous drain current ID 10 A Enhancement mode • Avalanche rated • dv/dt rated	Original	PDF	10N10 SPD10N10 P-TO252 Q67040-S4119 SPU10N10 P-TO251 Q67040-S4111-A2 10N10 P-TO252 SPD10N10 SPU10N10
10n10 Abstract: P-TO252 SPD10N10 SPU10N10 658G Text: Preliminary Data SPD 10N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.2 Ω Continuous drain current ID 10 A Enhancement mode • Avalanche rated • dv/dt rated	Original	PDF	10N10 SPD10N10 P-TO252 Q67040-S4119-A2 SPU10N10 P-TO251 Q67040-S4111-A2 10n10 P-TO252 SPD10N10 SPU10N10 658G
BUZ MOSFET Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package	Original	PDF	615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
10n10 Abstract: No abstract text available Text: Preliminary Data SPD 10N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.2 Ω Continuous drain current ID 10 A Enhancement mode • Avalanche rated • dv/dt rated	Original	PDF	10N10 SPD10N10 SPU10N10 PG-TO252 PG-TO251 Q67040-S4119-A2 Q67040-S4111-A2 10n10
Untitled Abstract: No abstract text available Text: SIEMENS SPD10N10 Preliminary data SPU10N10 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 Pin 3 D S Type VDS b RDS on Package Ordering Code SPD10N10 100 V 10 A 0.2 Q P-T0252 C67078-S. SPU10N10 100 V 10 A 0.2 Q	OCR Scan	PDF	SPD10N10 SPU10N10 P-T0252 P-T0251 C67078-S. 23/Jan/1998
BUZ MOSFET Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8	OCR Scan	PDF	615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S