D13377T Search Results

BUZ102SL

Abstract: E3045 Q67040-S4010-A2 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ
Contextual Info: BUZ102SL Infineon te c h n o lo g ie } » m p f°v e d Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f l DS on 0.015 n 47 A t> V 55 • Logic Level

A4t 29 smd

Abstract: smd a4t
Contextual Info: BUZ 32 In fin e o n t*chriQlogt*s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 32 Vds f lDS on 200 V 9.5 A 0.4 n • Package Ordering Code TO-220 AB C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current

Contextual Info: SPD 13N05L Infineon technologies w » p f°v e d SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancem ent mode Drain-Source on-state resistance ^DSion Continuous drain current b • Avalanche rated 55 V 0.064

KT 117A

Abstract: SMD CODE HBA
Contextual Info: BSP 315P I nf ineon technologies Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel • Enhancement mode • Avalanche rated • Logic Level • dvldt rated Typ Package BSP 315 P SOT-223 Ordering Code Q67042-S4004 Marking

Contextual Info: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current

Contextual Info: BSS98 In fin e o n t*ehnoiogi*i SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type Vbs BSS98 50 V Type BSS98 BSS98 BSS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 0.3 A °DS(on) Package

Contextual Info: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6

kd smd transistor

Contextual Info: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated

Contextual Info: BUZ 73 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^DS on Package Ordering Code BUZ 73 200 V 7A 0.4 £2. TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current

SMD Transistor t30

Abstract: transistor SMD t30
Contextual Info: SPP 30N03L Infineon technologie» SIPMOS Power Transistor Product Summary Features V 30 Drain source voltage '/ ds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.018 n 30 A h • N channel • Logic Level

28N05L

Contextual Info: Infineon h te c imPr° n ol o g i Ive<& SPD 28N05L Hosion “ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage '/DS Drain-Source on-state resistance f l DS on) 0.026 Si A 28 t> • Enhancement mode Continuous drain current

Transistor SMD SM 942

Contextual Info: SPD 30N03 I nf ineon tec h n o l og i « s SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current V 'd s f l D S o n fc> 30

Contextual Info: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n

transistor SMD 1gs

Abstract: 46n03l smd 1Gs SD-46 Diode
Contextual Info: , • - SPP 46N03L Inf ineon technology SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel ^D S Drain-Source on-state resistance . Enhancement mode f l D S o n Continuous drain current • Avalanche rated 30 V 0 .0 1 2

Contextual Info: BSS 129 Infine on technologies SIPMOS Small-Signal Transistor • • • • • • • 240 V 0.15 A ^DSfon 20 O N channel Depletion mode High dynamic resistance Available grouped in VGs th> V DS 1D Type Pin C onfigu ration Marking Tape and Reel Information

Contextual Info: BUZ 344 I nf ineon technologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type ^DS to flDS on Package Ordering Code BUZ 344 100 V 50 A 0.035 n TO-218AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

Contextual Info: BSO 220N Infineon t«ehneiog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Dual N Channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 20 V ^fos on

cc 3025 diode

Abstract: 5T4 tube BUZ110S MC 140 transistor 8235 smd transistor h7 E3045 Q67040-S4005-A2 transistor smd marking CODE Wb transistor marking smd 7c
Contextual Info: In fin e o n BUZ 11 OS ! ^ e d Costoni * technologie* im P r° SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode Drain source voltage ^DS Drain-Source on-state resistance ñ DSÍon Continuous drain current • Avalanche rated

TRANSISTOR SMD MARKING CODE 7B 6 pin

Abstract: SmD TRANSISTOR a74 TRANSISTOR SMD MARKING E0 smd transistor 718 smd transistor 2Q BUZ 1025 Aajs T55B H7 marking code smd BUZ110SL
Contextual Info: BUZ 110SL Infineon t « c h n o I o g <e s SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS R DS on Id 55 V 0.01 a

Contextual Info: BSP 297 I nf ineon lachnologias SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •V'GS .h = a 8 - 2 0 V Pin 1 Type l'o s BSP 297 200 V Type BSP 297 Ordering Code Q67000-S068 0.65 A Pin 2 flDS(on) Package Marking 2£2

Contextual Info: BSP 129 Infineon technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 240 V ¡o 0.2 A ^DS on 20 £2 N channel Depletion mode High dynamic resistance Available grouped in VGS(ttl) Type Ordering Code Tape and Reel Information Pin Conf gura tion M arking

TRANSISTOR SMD MARKING CODE 7A

Contextual Info: BSP 296 I nf ineon technologies SIPMOS 9 Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Type '/ DS BSP 296 100 V Type BSP 296 Ordering Code Q67000-S067 1A Pin 2 WDS(on) Package Marking 0.8 Q SOT-223

Contextual Info: BSS 7728 In fin e o n technologies SIPMOS Small-Signal Transistor b • N channel 7 y SX/N. • Enhancement mode • '|/GS(tti = 1-°—2.5V 1 Pin 1 VPS05557 Pin 2 G Pin 3 S Type Vds fe f lDS(on) Package Marking BSS 7728 60 V 0.15 A 7.5 £1 SOT-23 sSJ