S29F Search Results

Contextual Info: H ig h p e r f o r m a n c e 256K X8/128K X16 5 V C M O S F la s h E E P R O M « II A S29F200 A 2 5 6 K X 8 / 1 2 8 K X 1 6 C M O S Flash EEPROM Preliminary information Features • S ector a rc h ite c tu re - One 16K; tw o 8K; one 32K; and three 64K byte sectors

8-QSOP

Contextual Info: 2UALITY S E M I C O N D U C T O R INC M1E D • 74bbfl03 G 0 G G 5 b 2 Q ■ Ö S I (p ~ ^ QSFCT29520T, 29521T, 252ÖT, 2521T Q High Speed CMOS ■ r i Multilevel Pipeline Registers SSJSESi*?!! S29FCT521T qs2 9 fc t 252 ot Q S29FCT2521T FEATURES/BENEFITS

00D05

Abstract: AS29F040 29F040 29F040-70
Contextual Info: H ig h P e r f o r m a n c e 512KX8 S V C M O S F la s h EEPRO M « II J J i A S29F040 5 1 2 K X 8 CMOS Flash EEPROM Preliminary information Features • Organization: 5 1 2 Kx 8 • Sector architecture • Low pow er consum ption - 30 m A m a x im u m rea d c u rre n t

Contextual Info: lJUALITY SEMICONDUCTOR INC 30E II • 74bfaäü3 Q00008S 8 ■ 't^-S'a-a QUALITY SEMOG NOU<QT©3 INC. Q H ig h S p e e d Q k it D 1 1 * 8 -b it B u s R e g is te r C M O S In te r fa c e T r a n s c e iv e r s 2 l? S p S ii Q S29FCT53/A Q S 2 9 F C T 2 0 5 2 /A

Contextual Info: QSFCT833T, 853T, 2833T, 2853T Q High Speed CMOS Transceivers i i / j i u Q m iih , With Parity Q S29FCT833T Q S29FCT853T nMncnTOO„ T qs 29fct 2853t Q S29FC T2833T ADVANCE INFORMATION FEATURES/BENEFITS • • • • • Pin and function compatible to the Am29833/53

PS2002A

Contextual Info: PI29FCT520T/2520T PI29FCT521T Fast CMOS Multilevel Pipeline Registers Product Features: Product Description: • P I29F C T 520T and P I29F C T 521T are pinout and function com patible w ith ID T29FC T 520/521, Q S29FCT520/521 and A M D ’s Am 29520/521 Pericom S em iconductor’s PI29FC T series o f logic circuits are

Contextual Info: S29FCT52T, 53T, 2052T, 2053T Q S29FCT52T S29FCT53T High Speed CMOS 8-bit Bus Interface Register Transceivers Q S29FCT2052T S29FCT2053T FEATURES/BENEFITS • Pin and function compatible to the Am2952/3 29FCT52/3 and 29FCT52/3T • CMOS power levels: <7.5 mW static

29F400-70

Abstract: 29f400 programming 29F400 9F400 29F400-90
Contextual Info: H ig h P erfo rm a n ce 512KX8/256KX16 5 V CMOS Flash EEPROM - A S29F400 II J ill r 5 1 2 K x 8 / 2 5 6 K x l 6 CMOS Flash EEPROM Preliminary information Features • O rganization: 5 1 2 K X 8 or 2 5 6 K x l 6 • Sector architecture - One 16K; two 8K; one 32K; and seven 64K byte sectors

29F400-70

Abstract: programming 29F400 29f400 256KX16 AS29F400T-70S1 T00344 XX11110 JS2617 29F400-90
Contextual Info: A H i y l i P c r f o r n i a i H i' S I2K X 8/2S 6K X SV CM O S •■ I6 Flash F.FPR O M A S29F400 Î I 2 K X 8 / 2 5 6 K X 16 C M O S F l u s h F E P R O M Preliminary information Features • Organization: 512KX8 or 256KX16 • Sector architecture • Low pow er consum ption

C2324

Abstract: IS80C51358
Contextual Info: QSFCT833T, 853T, 2833T, 2853T Q High Speed CMOS Transceivers D n v ito With Parity Q S29FC T833T Q S29FC T853T Q S29FC T2833T s29fct2853t ADVANCE INFORMATION F E A TU R E S /B E N E FIT S • • • • « Pin and function compatible to the Am29833/53 Parity generation and detection

Contextual Info: H igh perform an ce 512K X 8 5 V CMOS Flash EEPROM n A S29F040 II. II W llh . 5 1 2 K x 8 CM O S Flash EEPROM Preliminary information Features • Low pow er consum ption • Organization: 512K X 8 • Sector architecture • • • • - 3 0 m A m ax im u m read current

Contextual Info: H igh perform ance 128KX8 5 V CMOS Flash EEPROM H A S29F010 II 1 2 8 K X 8 CMOS Flash EEPROM Features • O r g a n iz a t io n : 12 8 K x 8 b its • JEDEC s ta n d a r d w r i t e c y c le c o m m a n d s - p ro te c ts da ta fro m accidental changes • S e c to r E rase a r c h ite c tu r e

c2324

Contextual Info: QSFCT833T, 853T, 2833T, 2853T ß X High Speed CMOS Transceivers With Parity Q S29FCT853T nMnCf>„ 0, „ ADVANCE INFORMATION FEATURES/BENEFITS • • • • • Pin and function compatible to the Am29833/53 Parity generation and detection CMOS power levels: <7.5 mW static

Contextual Info: H igh Perform ance S12KX8 SV CMOS Flash EEPROM « A S29F040 II II 512K X 8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512Kx8 • Sector architecture - 30 mA m axim um read current - 60 mA m ax im u m program current

Contextual Info: H ig h p e r fo r m a n c e 2 5 6 IÍX 8 SV C M O S F la s h E E P R O M A S29F002 h A 2 5 6 K X 8 CM O S Flash E E PR O M Prelim inary information Features • O rgan ization: 2 5 6 K x 8 • L o w p o w er co n su m p tio n - 4 0 mA m axim um read current

Contextual Info: Ö U A L IT Y S E M I C O N D U C T O R INC bSE » • 7 4 b b ñ 0 3 D G 0 1 1 3 Q 5b4 S29FCT520T, 521T, 2520T, 2521T Q S29FCT520T Q S29FCT521T High Speed CMOS Multilevel Pipeline Registers Q S29FCT2520T Q S29FCT2521T FEATURES/BENEFITS • ■ • • Pin and function compatible to the Am29520

29F080

Abstract: 29F080-90 S-12 AS29F080
Contextual Info: H igh p erform ance •■ A S29F080 IHI 1MX8 5V CMOS Flash EEPROM 1 Mcjjcihil x R C M O S F lash E P R O M Prelim inary inform ation Features • Organization: 1MX8 • Sector architecture • Low pow er consum ption - 30 mA m a x im u m rea d c u rre n t

S1998

Abstract: .5555b AS29F040 29F040-70
Contextual Info: H ig h p e r f o r m a n c e S1ZKX8 5 V C M O S F la s h E E PR O M •■ II A S29F040 5 1 2K x 8 CMOS Fiash EEPROM Preliminary information Features • Organization: 512KX8 • Sector architecture • Low pow er consumption - 3 0 m A m axim um read current

2952

Abstract: QSFCT2952T
Contextual Info: QSFCT2952T, 2953T2052T, 2053T H ig h S p e e d C M O S 8 -b it B u s In te rfa c e R e g is te r T r a n s c e iv e r s Q ° | ^ c t 52t q s29f c t 53t S29FCT2052T Q S 29F C T 2053T F E A TU R E S /B E N E FIT S • • • • Pin and function compatible to the Am2952/3

s29f

Contextual Info: S29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '

Contextual Info: Preliminary information Features • O r g a n iz a t io n : 5 1 2 K x 8 o r 2 5 6 K x 16 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 S m A m a x im u m re a d c u rre n t - 60 m A m a x im u m p ro g r a m c u rre n t - O n e 16K; tw o 8K; o n e 32K; a n d seven 64K b y te sectors

29F080

Abstract: S29F080
Contextual Info: Preliminary information Features • O rg a n iz a tio n : 1M x 8 • S ecto r a rc h ite c tu re - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5 .0 ± 0 .5 V p o w e r s u p p ly f o r r e a d / w r ite o p e ra tio n s

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

Contextual Info: Hiyli P e r f o r m a n c i 1 •■ S29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n