Untitled
Abstract: No abstract text available
Text: High performance 1Mx8 5V CMOS Flash EEPROM AS29F080 1 Megabit×8 CMOS Flash EPROM Preliminary information Features • Organization: 1M×8 • Sector architecture • Low power consumption - 30 mA maximum read current - 50 mA maximum program current - 1 µA typical standby current RESET = 0
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AS29F080
40-pin
44-pin
40-pin
AS29F080-55TC
AS29F080-70TC
AS29F080-70TI
AS29F080-90TC
AS29F080-90TI
AS29F080-120TC
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pic16f877p
Abstract: m861 ATmel 750 24c04 atmel 620 24C64 PH29EE010 Siemens M841 MM29F040P-XX temic 5557 D27C010A HN462732G
Text: P801 Device Support List Version 6.6 Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K. Tel +44 1707 332148 Fax +44 1707 371503 sales@stag.co.uk support@stag.co.uk
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AM27C512
AM27C512L.
MBM29F002B-X
XC17xx
pic16f877p
m861
ATmel 750 24c04
atmel 620 24C64
PH29EE010
Siemens M841
MM29F040P-XX
temic 5557
D27C010A
HN462732G
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ AS29F080 A 5V 1Mx 8 CM O S Flash EEPROM Features • Organization: 1Mx 8 • Sector architecture - Sxteen 64Kbyte sectors - Equal sector architecture - Erase any combination o f sectors or full chip • Sngle 5.0±0.5V pow er supply for read/ write operations
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AS29F080
64Kbyte
10x20
40-pin
AS29K
80-55TC
80-70TC
80-70T[
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AS29F080
Abstract: AS29 29F080 29fu
Text: Preliminary information •■ AS29F080 1 5V 1M x 8 C M O S Flash EEPROM Features • O rg an izatio n : 1M x 8 • Sector arch itectu re - Sixteen 64K b y te sectors - Equal secto r arc h ite ctu re - Erase an y c o m b in a tio n o f sectors o r full chip
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AS29F080
10x20
AS29F080-55TC
AS29F080-70TC
AS29F080-90TC
AS29F080-120TC
AS29F080-
150TC
40-pin
AS29F080-70TI
AS29F080
AS29
29F080
29fu
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LTS 547 EH
Abstract: No abstract text available
Text: Preliminary inform ation AS29F080 II 5V 1M x 8 CMOS Flash ÜPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equalsectorarchitecture - Erase any com bination o f sectors o r fu ll chip • Single 5 D± 0 5 V pow e r supply ib rread /w rite opeiations
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AS29F080
080-150S
080-90T
29F080-90S
080-55S
S29F080
LTS 547 EH
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ AS29F080 II 5V 1Mx 8 CMOS Flash EEPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5.0± 0.5V po w er supply for re a d /w rite operations
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OCR Scan
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AS29F080
80-90T
080-120T
080-150T
080-55S
AS29F
080-70S
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29F080
Abstract: S29F080
Text: Preliminary information Features • O rg a n iz a tio n : 1M x 8 • S ecto r a rc h ite c tu re - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5 .0 ± 0 .5 V p o w e r s u p p ly f o r r e a d / w r ite o p e ra tio n s
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AS29F080-90TC
A529F080-90TI
AS29F080-90SC
A529F080-90SI
AS29F080-î
AS29F080-120TI
AS29F080-12OSC
AS29F080-120SI
AS29F080-IS0TC
AS29F080-I50TI
29F080
S29F080
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AS4C256K16F0-60JC
Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Text: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization
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AS7C164-
AS7C164-8JC
64-10JC
AS7C164L-I
AS7C164-12PC
AS7C164L-1
AS7C164L-UJC
AS7C2S6-12PC
AS7C164-1SPC
64L-I5PC
AS4C256K16F0-60JC
AS7C164-20PC
AS7CI64-20JC
AS4LC1M16ES-50TC
120TC
28K1
AS4C1440S
1SPC
AS29F040-120TC
as7c3
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SRAM 64KX8 5V
Abstract: No abstract text available
Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O
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256K-
128KX8
64KX16
64KX8
32KX16
32KX8
128KX8
28gxl6|
SRAM 64KX8 5V
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SRAM 64KX8 5V
Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Text: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164
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AS7C164
AS7C256
AS7C512
AS7C513
AS7C3513
AS7C1024
AS7C31024
AS7C1026
AS7C31026
AS7C1025
SRAM 64KX8 5V
128U K
SRAM 512*8
SRAM
3.3v 1Mx8 SRAM
edo dRAM
AS7C40
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AS4C1M16FS
Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Text: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423
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AS29F002
j4S29F03
AS29F040
AS29F080
AS29F200
AS29F400
AS291X008
AS29LL800
AS29LV002
AS29LV008
AS4C1M16FS
1Mx16 flash
3.3v 1Mx8 SRAM
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29F080
Abstract: No abstract text available
Text: High p erform an ce lM x 8 5V CMOS Flash EEPROM •■ II II A S 29F080 I \ f c j j a h i i x 8 CMOS Flash E P R O M Preliminary information Features • Organization: 1MX8 • Sector architecture • Low power consumption - 3 0 mA m axim um read current - SO mA m axim um program current
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29F080
S29F080-55TC
AS29F080-70TC
S29F080-70TI
AS29F080-90TC
S29F080-90TI
29F080-120T
S29F080-120T
S29F080-150T
29F080-150T
29F080
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29F080
Abstract: 29F080-90 S-12 AS29F080
Text: H igh p erform ance •■ A S29F080 IHI 1MX8 5V CMOS Flash EEPROM 1 Mcjjcihil x R C M O S F lash E P R O M Prelim inary inform ation Features • Organization: 1MX8 • Sector architecture • Low pow er consum ption - 30 mA m a x im u m rea d c u rre n t
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AS29F080
10x20
40-pin
AS29F080-
-55TC
AS29F080-AS29F080-
-90TC
-90TI
29F080
29F080-90
S-12
AS29F080
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