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Untitled Abstract: No abstract text available Text: Advance information •■ AS29LL800 II 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features •O rganization: 1M x 8 / 5 1 2 K x 16 • Sector architecture - O ne 16K; tw o 8K; one 32K; and fifteen 64K byte sectors - O ne 8K; tw o 4K; one 16K; and fifteen 32K w o rd sectors	OCR Scan	PDF	AS29LL800 8/512Kx speci20TC S29LL800-120TI S29LL800-150TC S29LL800-150TI AS29LL800-200TC S29LL800-200TI AS29LL800-120SC AS29LL800-120SI
AS29 Abstract: 11100M Text: Advance information •■ AS29LL800 1 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features • O rg an izatio n : 1M x 8 /5 1 2 K x 16 • Sector arch itec tu re - O n e 16K; tw o 8K; o n e 32K; an d fiftee n 64K b y te sectors - O n e 8K; tw o 4K; o n e 16K; an d fiftee n 32K w o rd sectors	OCR Scan	PDF	AS29LL800 1Mx8/512Kx16 1Mx8/512Kx16 12x20 48-pin 9LL800-120TC AS29LL800-120TI AS29LL800-150TC AS29LL800-150TI AS29LL800-200TC AS29 11100M
Untitled Abstract: No abstract text available Text: Advance information •■ AS29LL800 A 2.2V !Mx8/512Kxl6 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)	OCR Scan	PDF	AS29LL800 Mx8/512Kxl6 8/512K 64Kbyte 32Kword write/LL800T150SC AS29LL800T150SI AS29LL800T200SC AS29LL800T200SI 44-pin
AS4C256K16F0-60JC Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3 Text: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization	OCR Scan	PDF	AS7C164- AS7C164-8JC 64-10JC AS7C164L-I AS7C164-12PC AS7C164L-1 AS7C164L-UJC AS7C2S6-12PC AS7C164-1SPC 64L-I5PC AS4C256K16F0-60JC AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
land pattern for TSOP 2 54 pin Abstract: land pattern for TSOP 56 pin TSOP 54 land pattern 40013A land pattern for TSOP Text: n H igh p e rfo rm a n c e 1 M X 8 /5 1 2 K X 1 6 2.2V CMOS Flash EEPROM AS29LL8ÜÖ II 1 M X 8 / 5 1 2 K X 1 6 CMOS Flash EPROM Advance information Features •O rganization: 1M x 8/512K x 16 • Sector architecture - • Low power consumption - 8 mA typical read current	OCR Scan	PDF	AS29LL8Ü 8/512K 48-pin land pattern for TSOP 2 54 pin land pattern for TSOP 56 pin TSOP 54 land pattern 40013A land pattern for TSOP
SRAM 64KX8 5V Abstract: No abstract text available Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6\| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O	OCR Scan	PDF	256K- 128KX8 64KX16 64KX8 32KX16 32KX8 128KX8 28gxl6\| SRAM 64KX8 5V
SRAM 64KX8 5V Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40 Text: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164	OCR Scan	PDF	AS7C164 AS7C256 AS7C512 AS7C513 AS7C3513 AS7C1024 AS7C31024 AS7C1026 AS7C31026 AS7C1025 SRAM 64KX8 5V 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
AS4C1M16FS Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM Text: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423	OCR Scan	PDF	AS29F002 j4S29F03 AS29F040 AS29F080 AS29F200 AS29F400 AS291X008 AS29LL800 AS29LV002 AS29LV008 AS4C1M16FS 1Mx16 flash 3.3v 1Mx8 SRAM
Untitled Abstract: No abstract text available Text: Advance information Features •Organization: !M x 8 /5 1 2 K x l6 • Sector architecture • Low power consumption - 8 m A ty p ic a l r e a d c u rre n t - O n e 16 K ; t w o 8 K ; o n e 3 2 K ; a n d fifte e n 6 4 K b y te se c to rs - 1 6 m A ty p ic a l p r o g r a m c u rre n t	OCR Scan	PDF	S29LL800 1-40013-A.