AM27C512 Search Results

eprom 27C512 28pin

Contextual Info: F IN A L A Am27C512 M D i l 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vc c + 1 V ■ Fast access time — Speed options as fast as 55 ns ■ High noise immunity ■ Low power consumption

Contextual Info: Am27C512 OTP 65,536 x 8-Bit CMOS One-Time Programmable ROM OTPROM Am27C512 OTP ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • Fast access time — 200 ns Low-power dissipation Both interactive and new Flashrite* programming algo­ rithms available

27C512 eprom

Contextual Info: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V F a s t a c c e s s tim e — 5 5 ns L o w p o w e r c o n s u m p tio n High noise immunity — 2 0 (iA typica l C M O S sta n d b y cu rent

AM27C512

Abstract: AM27C512-90DC 127C512
Contextual Info: ADV MICRO MEMORY b*4E D • 025752Ö 0D31c14b 3 0 e! ■ AMDM a Advanced Micro Devices Am27C512 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc + 1 V — 70 ns ■ High noise immunity

Contextual Info: r> -> f -T a <rv_ ADV flICRO {flEHORY} Tb D e | D^SVS^fl □ □ 5 b h c13 b f Am27C512 OTP 5 25 65,536 x 8-Bit CMOS One-Time Programmable ROM OTPROM Am27C512 OTP * ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • • • • • Fast access time — 200 ns

Contextual Info: AMD3 Am27C512 512 Kilobit 64 K X 8-Bit CMOS EPRO DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity ■ Versatile features for simple interfacing — Speed options as fast as 55 ns

MB834000

Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Contextual Info: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010

AM27C512

Abstract: AM27C512-120 am33c93a AM27C512-150 AM27C512-200 AM27C512-255DC ao,bh am33c93
Contextual Info: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: Advanced Micro Devices Am27C512 65,536 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tim e—70ns JEDEC-approved pinout Low power consum ption: jxA maximum standby current ± 1 0 % power supply tolerance -1 0 0 Fast Flashrlte programming

Contextual Info: Preliminary Advanced Micro Devices Am27C512L 65,536 x 8-Bit Ultra-Low CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tim e—70ns ■ Ultra-low power consumption: - 5 mA maximum active current at 5 MHz - 20 jiA maximum standby current ■ Programming voltage: 12.75 V

Contextual Info: FINAL & Am27C512 Advanced Micro Devices 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 70 ns ■ Low power consumption — 20 |jA typical C M O S standby current

Contextual Info: a Preliminary Advanced Micro Devices Am27C512L 65,536 X 8-Bit Ultra-Low CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ Fast access time—70ns Ultra-low power consumption: - 5 mA maximum active current at 5 MHz - 20 nA maximum standby current Programming voltage: 12.75 V

Contextual Info: FINAL AMDZ1 Am27C512 512 Kilobit 64 K X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — Speed options as fast as 55 ns ■ Low power consumption ■ Versatile features for simple interfacing

AM27C512

Abstract: AM27C512-120 AM27C512-150 AM27C512-150DC
Contextual Info: FINAL Am27C512 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from –1 V to VCC + 1 V — Speed options as fast as 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: ADV MI CRO MEMOR Y MAE D 02575SÖ Preliminary 0G303Û3 Q • AHD4 T-46-13-29 Advanced Micro Devices Am27C512L 65,536 x 8-Bit Ultra-Low CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time—70ns ■ Ultra-low power consumption: - 5 mA maximum active current at 5 MHz

AM27C512

Abstract: AM27C512-120 AM27C512-150 AM27C512-150DC Product Selector Guide
Contextual Info: FINAL Am27C512 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS n Fast access time n Latch-up protected to 100 mA from –1 V to VCC + 1 V — Speed options as fast as 55 ns n High noise immunity n Low power consumption n Versatile features for simple interfacing

atmel 24c16a

Abstract: ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS
Contextual Info: GALEP-III Device List 2000-01-31 valid for version 1.17 page 1 of 1 D:\btl117.doc EPROM AMD AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 AM27C512 AM27C64 ATMEL AT27C/LV/BV010 AT27C/LV/BV020 AT27C/LV/BV040 AT27C/LV/BV256

AM27CS12-300

Abstract: AM27C512DC LS003312
Contextual Info: a Advaß Am27C512 65,536 x 8-Bit CMOS EPROM Devices DISTINCTIVE CHARACTERISTICS • • • Fast access time — 90 ns Low power consumption: - 100 mA maximum standby current Programming voltage: 12.5 V • • • • Single +5-V power supply JEDEC-approved pinout

Contextual Info: Am27C512 65,536 X 8-Bit CMOS EPROM Am27C512 ADVANCE INFORMATION DISTINCTIVE CH A RACTERISTIC S • • • Fast a c c e s s time — 150 n s Low-power dissipation Both interactive and new Flashrite* programm ing algorithms available • • • • S in gle 5-volt power supply

TMS27256

Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
Contextual Info: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64

0257S2

Contextual Info: ADV MI CRO BÖE MEMORY D . * QSS7SSÖ 002=14^ W PS ÏS -2 ? I AMD4 3 £? Advanced Micro Devices Am27C512L 65,536 x 8-Bit Ultra-Low CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tim e—70ns ■ Ultra-low power consum ption: - 5 mA maximum active current at 5 MHz

d501ad

Contextual Info: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: il Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 70 ns ■ Low power consumption ■ High noise immunity — 20 nA typical CMOS standby current

IN3064

Contextual Info: a Preliminary Advanced Micro Devices Am27C512L 65,536 X 8-Bit Ultra-Low CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ JEDEC-approved pinout - Plug in replacement fo r Am27C512 Fast access time—70ns Ultra-low power consum ption: - 5 mA maximum active current at 5 MHz