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    Untitled

    Abstract: No abstract text available
    Text: H ig h P erform a n ce 32 K X 16 CMOS SRAM A S7C 513 A S 7 C 3 5 13 3 2 K x 16 CMOS SRAM • T T L - c o m p a tib le , th r e e - s ta te I / O • H ig h s p e e d • 4 4 - p i n JEDEC s ta n d a r d p a c k a g e - 4 0 0 m i l SO J - 1 0 / 1 2 / 1 S / 2 0 n s a d d r e s s a c c e ss tim e


    OCR Scan     		PDF 1-20011-A. 3-10JC AS7C3S13-10JC S7C513-12JC S7C513-15JC S7C3513-12JC 3513-15JC S7C513-20JC 3513-20JC AS7C513-Ã

    Untitled

    Abstract: No abstract text available
    Text: H ig h P e r f o r m a n c e 64K X 8 3.3V CM OS SRAM A S 7 C 3 5 12 X Low voltage 6 4 K x 8 CM O S SRAM • O rganization: 6 5 ,5 3 6 w ords x 8 bits • Single 3.3 ± 0.3V p o w er supply • H igh speed - 2 0 /2 5 ns address access tim e - 5 / 6 ns o u tp u t enable access tim e


    OCR Scan     		PDF G0Q1351 AS7C3512 AS7C3S12-20PÃ AS7C3512-25PC AS7C3512-20JC AS7C3S12-25JC 0015-A. 0GG13S2

    4lc1m16e5-6

    Abstract: No abstract text available
    Text: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al


    OCR Scan     		PDF 16E5-60) 4LC1M16E5-60) 42-pin AS4C1M16ES-50JC AS4C1M16E5-60JC AS4LC1M16E5-50TC -60TC 42-pin 1M16E0 4lc1m16e5-6

    Untitled

    Abstract: No abstract text available
    Text: I l i ^ h l*i i loi i n ,iih c S I 2k x X r>V C M O S Ma sh MiPKOM •■ \ S 2 >M 40 A S I ?.KX<S CMOS f ldsli I I f'KOM Preliminary information Features • Low power consumption • Organization: 512KX8 • Sector architecture - 3 0 m A m a x im u m re a d c u rre n t


    OCR Scan     		PDF 512KX8 AS29F040-55TC AS29F040-70TC AS29F040-70T1 AS29F040-90TC AS29F040-90TI AS29F040-120TC A529F040-120TI AS29F040-150TC AS29F040-150TI

    as4c256k16eo

    Abstract: 256KX16 AS4C256K16E0 LO301
    Text: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • Extended data out • 512 refresh cycles, 8 ms refresh interval • Organization: 26 2 ,1 4 4 words X 16 bits • High speed


    OCR Scan     		PDF AS4C256K16E0 256KX16 4C256K16E0-45) 40-pin I/015 I/014 as4c256k16eo LO301

    4LC1M16E5

    Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5
    Text: H ig h P e rfo rm a n c e l M x 16 CM OS DRAM » H A S4C1M 16E5 AS4LC1M 16E5 A l M x 16 CM OS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 re fre sh cycles, 16 m s re fre sh in te rv a l - RAS-only or CAS-before-RAS refresh


    OCR Scan     		PDF AS4C1M16E5 AS4LC1M16E5 4C1M16E5-60) 4LC1M16E5-60) 42-pin 4C1M16E5) 44/50-pin 4LC1M16E5) AS4C1M16E5) AS4C1M16E5 4LC1M16E5 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A 4lc1m16e5-60 AS4LC1M16E5

    Untitled

    Abstract: No abstract text available
    Text: H i j j h P i - r f o r m a i K <.• L BB SV C M O S I la s h 1 I P R O M 2 A S 2 l> I ' 2 0 0 A S6K X 8/IZ8K x I6 6 K x 8 / I 2 8 K x 1 6 C M O S Jf /.isii I'I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture


    OCR Scan     		PDF 256KX8 128KX16 e-120TC -120TI S29F200B -55SC S29F200B-70SC -90SC

    Untitled

    Abstract: No abstract text available
    Text: High Perform ance lM x 16 CMOS DRAM A S4C 1M 16E 5 1 M x 16 CMOS EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write


    OCR Scan     		PDF 16E0-60) 42-pin 71pS4C AS4C1M16E5-60JC 1M16E0 42-pin

    Untitled

    Abstract: No abstract text available
    Text: H igh p erfo rm an ce 512Kx8/256Kxl6 5V CMOS Flash EEPROM U A S 29F 400 A 512Kx8/256Kx 16 CMOS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 5 1 2 K X 8 o r 2 5 6 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a r c h it e c tu r e


    OCR Scan     		PDF 512Kx8/256Kxl6 512Kx8/256Kx

    29F400-70

    Abstract: 29f400 programming 29F400 9F400 29F400-90
    Text: H ig h P erfo rm a n ce 512KX8/256KX16 5 V CMOS Flash EEPROM - A S29F400 II J ill r 5 1 2 K x 8 / 2 5 6 K x l 6 CMOS Flash EEPROM Preliminary information Features • O rganization: 5 1 2 K X 8 or 2 5 6 K x l 6 • Sector architecture - One 16K; two 8K; one 32K; and seven 64K byte sectors


    OCR Scan     		PDF AS29F400 512KX8/256KX16 S12KX8/256KX16 512KX8 256Kxl6 cycl9F400T-70TI AS29F400T-90TC AS29F400T-90TI AS29F400T-120TC AS29F400T-120TI 29F400-70 29f400 programming 29F400 9F400 29F400-90

    AS4C256K16E0-45JC

    Abstract: No abstract text available
    Text: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s x 16 b its • E x te n d e d d a ta o u t • H ig h s p e e d • 5 1 2 r e f r e s h c y c le s , 8 m s r e f r e s h in te r v a l


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Il High Performance 256Kxl6 CMOS DRAM AS4C256K16F0 High Speed 256Kxl6 CMOS DRAM Fast Page Mode PRELIMINARY I F E A TU R E S_ • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words by 16 bits - RAS-only or CAS-before-RAS refresh


    OCR Scan     		PDF 256Kxl6 AS4C256K16F0 256Kxl6 40-pin 4C256K16F0-50) AS4C256K 16F0-50JC 40-pin AS4C256K16F0-60JC 256K16

    Untitled

    Abstract: No abstract text available
    Text: Hi gh p e r f o r m a n c e 4 M b s y nc hr on ou s CMOS SRAM AS7C3256KJ6P AS7C3256K18P H '> _ 2 5 6 X X 1 6 / 18 p ip e lin e b u rst synchronous SR A M Advance information Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s


    OCR Scan     		PDF AS7C32S6KJ6P AS7C3256K18P 256KX 100-pin AS7C3256K16P-3 AS7C32S6K16P-4TQC AS7C3256K16P-5TQC AS7C32S6K18P-3

    256KX16

    Abstract: 64KX16 AS7C1026 AS7C3513 AS7C4098 AS7C513 cm540
    Text: H igh P erform an ce 3 2 K x 16 C M O S SRAM « H AS7C513 AS7C3513 A 3 2 K x 1 6 CM OS SRAM Features • O r g a n iz a t io n : 3 2 , 7 6 8 w o r d s x 1 6 b its • H ig h s p e e d • 4 4 - p i n JEDEC s ta n d a r d p a c k a g e - 4 0 0 m i l SO J - 1 0 / 1 2 / 1 S / 2 0 n s a d d r e s s a c c e ss t im e


    OCR Scan     		PDF 32KX16 AS7C513 AS7C3513 44-pin 64KX16 AS7C1026) 256KX16 AS7C4098) 3-10JC AS7C3513-10JC 256KX16 64KX16 AS7C1026 AS7C3513 AS7C4098 cm540

    .5555b

    Abstract: 29F200 29f200 70 ALG 2-72 29f200-90 165555H AS29F200T 6kX8 bit memory array
    Text: A Hi” h IVrfnrm am r ¿ 5 6 k x 8 / I Z 8 K x 16 SV C M O S I la sh HB K IP R O M ASZ9I-200 Z ^ K x X / I 2 8 K x 1 6 C M O S ¡'l a s h I I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture - O ne 16K; tw o 8K; on e 32K; and three 64K byte sectors


    OCR Scan     		PDF t-200 256KX8 128KX16 55/70/90/120ns AS29F200B-70TI AS29F200B-90TC AS29F200B-90T1 AS29F200T-70TC AS29F200T-70TI AS29F200T-907C .5555b 29F200 29f200 70 ALG 2-72 29f200-90 165555H AS29F200T 6kX8 bit memory array

    20014a

    Abstract: 7C3256 32KX8 AS7C3256 AS7C32S6
    Text: H ig h P e r f o r m a n c e 3 2 K x 8 3 .3 V C M O S SRAM . . A S7C 3256 II Jn L Low voltage 32K X 8 CMOS SRAM • TTL-com patible, three-state I /O • Ideal for cache, m odem , portable com puting - 75% p ow er reduction d uring CPU idle m ode • 2 8 -p in JEDEC standard packages


    OCR Scan     		PDF AS7C3256 32Kx8 28-pin AS7C32S6 AS7C3256-12PC AS7C32S6-15PC AS7C32S6-20PC AS7C3256-12JC 20014a 7C3256 AS7C3256