AS7C3513 Search Results

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: March 2001 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513 5V version • AS7C3513 (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed - 12/15/20 ns address access time

AS7C1026

Abstract: AS7C3513 AS7C4098 AS7C513 13-10TC
Contextual Info: AS7C513 AS7C3513 A 1 5V/3.3V 32Kx 16 CMOS SRAM Features • O rg an izatio n : 3 2 ,7 6 8 w o rd s X 16 bits • H ig h speed - 1 0 / 1 2 / 1 5 / 2 0 ns ad d ress access tim e - 5 / 6 / 8 / 1 0 ns o u tp u t en ab le access tim e • Low p o w e r c o n su m p tio n

6846

Abstract: AS7C3513 AS7C3513-12 AS7C513 AS7C513-12 oh140
Contextual Info: 2&72% 5#4<<<# $6:&846 $6:&6846 8926169#65.ð49#&026#65$0 # HDWXUHV • Low power consumption: STANDBY - 28 mW (AS7C513) / max CMOS - 18 mW (AS7C3513) / max CMOS • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O

Contextual Info: AS7C513 AS7C3513 5V/3.3V 32Kx 16 CMOS SRAM Features • O i g a n i z a t b n : 3 2 ,7 68 w o i r is x 1 6 b i t s • TTL -com p a t b i e , t h ie e - s t a i e 1/0 • H ig h g p e a d • 4 4 - p i n ÆDEC s ta n d a id p a c k a g e - 1 0 / 1 2 /1 5 / 2 0 n s a d d ie s s access tin e

AS7C3513C

Contextual Info: September 2006 Advance Information AS7C3513C 3.3 V 32K X 16 CMOS SRAM Features • Industrial -40o to 85oC temperature • Organization: 32,768 words x 16 bits • Center power and ground pins for low noise • High speed - 10 ns address access time

Contextual Info: June 2001 Preliminary Information AS7C513A AS7C3513A 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513A 5V version • AS7C3513A (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins

AS7C3513B

Abstract: AS7C3513B-10JC AS7C3513B-10JCN AS7C3513B-10JI
Contextual Info: March 2004 AS7C3513B 3.3V 32Kx16 CMOS SRAM Features • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time

Contextual Info: March 2004 AS7C3513B 3.3V 32Kx16 CMOS SRAM Features • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time

Contextual Info: February 2004 AS7C3513B 3.3V 32Kx16 CMOS SRAM Features • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time

Contextual Info: H igh Perform ance 32K X16 CMOS SRAM AS7C513 AS7C3513 3 2 K x 16 CMOS SRAM Advance information • Organization: 32,768 w ords x 16 bits • High speed - 1 2 /1 5 /2 0 ns address access time - 6 /8 /1 0 ns output enable access time • Low pow er consumption

256KX16

Abstract: 64KX16 AS7C1026 AS7C3513 AS7C4098 AS7C513 cm540
Contextual Info: H igh P erform an ce 3 2 K x 16 C M O S SRAM « H AS7C513 AS7C3513 A 3 2 K x 1 6 CM OS SRAM Features • O r g a n iz a t io n : 3 2 , 7 6 8 w o r d s x 1 6 b its • H ig h s p e e d • 4 4 - p i n JEDEC s ta n d a r d p a c k a g e - 4 0 0 m i l SO J - 1 0 / 1 2 / 1 S / 2 0 n s a d d r e s s a c c e ss t im e

TAA 621 applications

Abstract: TAA 521 A taa 621 63RD MD 202 Concord Electronics SW 3395 6V TAA 761 A AS7C3513 AS7C513
Contextual Info: High Performance 32Kx16 CMOS SRAM AS7C513 AS7C3513 32K×16 CMOS SRAM Advance information Features • Organization: 32,768 words × 16 bits • High speed - 12/15/20 ns address access time - 6/8/10 ns output enable access time • Low power consumption

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: August 2000 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM • • • • • • AS7C513 5V version AS7C3513 (3.3V version) Industrial and commercial temperature Organization: 32,768 words × 16 bits Center power and ground pins High speed - 12/15/20 ns address access time

AS7C3513

Abstract: AS7C3513-12 AS7C513 AS7C513-12
Contextual Info: August 2000 AS7C513 AS7C3513 5V/3.3V 32Kx16 CMOS SRAM Features • Low power consumption: STANDBY - 28 mW AS7C513 / max CMOS - 18 mW (AS7C3513) / max CMOS • 2.0V data retention • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O

Contextual Info: AS7C513 AS7C3513 5V /3.3V 32Kx 16 CMOS SRAM Features • Organization: 3 2 ,7 6 8 w ords X 16 bits • High speed - 1 0 / 1 2 /1 5 / 2 0 ns address access time - 5 / 6 / 8 / 1 0 ns output enable access time • Low pow er consum ption - Active: 504 mW m ax 20 ns cycle

AS7C3513

Abstract: AS7C513
Contextual Info: September 2001 AS7C513 AS7C3513 Š 5V/3.3V 32Kx16 CMOS SRAM HDWXUHV • AS7C513 5V version) • AS7C3513 (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed - 12/15/20 ns address access time

AS7C3513

Abstract: AS7C3513A AS7C513 AS7C513A
Contextual Info: September 2001 Preliminary Information AS7C513A AS7C3513A Š 5V/3.3V 32Kx16 CMOS SRAM HDWXUHV • AS7C513A 5V version) • AS7C3513A (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins

Contextual Info: November 2003 AS7C513A AS7C3513A 5V/3.3V 32Kx16 CMOS SRAM Features • AS7C513A 5V version • AS7C3513A (3.3V version) • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed

Contextual Info: September 2003 Preliminary Information AS7C3513B 3.3V 32Kx16 CMOS SRAM Features • Compatible to AS7C3513A • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 8/10/12/15/20 ns address access time

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: H ig h P erform a n ce 32 K X 16 CMOS SRAM A S7C 513 A S 7 C 3 5 13 3 2 K x 16 CMOS SRAM • T T L - c o m p a tib le , th r e e - s ta te I / O • H ig h s p e e d • 4 4 - p i n JEDEC s ta n d a r d p a c k a g e - 4 0 0 m i l SO J - 1 0 / 1 2 / 1 S / 2 0 n s a d d r e s s a c c e ss tim e

Contextual Info: AS7C 513 AS7C 3513 5V/3 .3V 32 Kx 16 CMOS SRAM Features • Organization: 32,768 w ords x 16 bits • High speed - 1 0 /1 2 /1 5 /2 0 ns address access time - 5 / 6 / 8 / 1 0 ns output enable access time • Low power consumption - Active: 504 m W max 20 ns cycle

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

AS7C31026

Abstract: AS7C34098 AS7C3513 AS7C4098 7c34098-12
Contextual Info: AS7C4098 AS7C34098 5V/3.3V 256Kx16 CMOS SRAM Features • Easy memory expansion with CE, OE inputs • TTL- and CMOS-compatible, three-state I/ • 44-pin JEDEC standard packages - 400 mil SOJ - 400 mil TSOP II • Center power and ground pins for low noise