S1993 Search Results

Contextual Info: DS 1992/D S1993/D S1994 DS1992/S1993 DALLAS SEMICONDUCTOR 1Kbit/4Kbit Touch M em ory DS1994 4Kbit Plus Time Touch M em ory™ SPECIAL FEATURES • Standard 16 mm diameter and 1-Wire protocol ensure compatibility with Touch Memory family • 4096 bits of read/write nonvolatile memory S1993

S14936DY

Abstract: S19936DY S1493
Contextual Info: T E M IC SÌ9956DY Semiconductors Dual N-Channel Enhancement-Mode MOSFET P rod uct S u m m a r y vDS V r DS(on) (Œ ) Id (A) 0 .1 0 @ V GS = 10 V ± 3 .5 0 .2 0 @ V G s = 4 .5 V ± 2 .0 20 Recom m ended upgrade: S14936DY or S19936DY Lower pro file ¡smaller size see: Si6956DQ

Contextual Info: MICRON SEMICONDUCTOR INC b3E D blllSM'i ODD7bflS 522 • MRN PRELIMINARY MT4C4M4A1/B1 4 MEG X 4 DRAM I^ IC R O N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, tim ing, functions and packages • High-performance CM OS silicon-gate process • Single power supply : +5V ±10%

Contextual Info: PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM M IC R O N 256KX16DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIG N M EN T Top View OPTIONS • Write Cycle Access BYTE or WORD via WE - (maskable) BYTE or WORD via CÄS (maskable) • Packages

Contextual Info: PRELIMINARY M IC R O N 512K WIDE DRAM MT4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-perform ance CM OS silicon-gate process

MT43C8129A

Contextual Info: PRELIMINARY MT43C8128A/9A 128K x 8 TRIPLE-PORT DRAM |V|ICRON 128K x 8 DRAM WITH DUAL 256 x 8 SAMS FEATURES • • • • • • • • • • • • • Three asynchronous, independent, data access ports Fast access times: 70ns random, 22ns serial O peration and control compatible with 1 M eg VRAMs

Contextual Info: ADVANCE MT4V25632 256K x 32 VRAM MODULE |U|ICRON VRAM MODULE 256K x 32 DRAM WITH 512 x 32 SAM PIN ASSIGNMENT Top View 104-Pin SIMM • Proposed industry-standard pinout in a 104-pin single­ in-line package • High-perform ance, CM O S silicon-gate process

ha 1604

Abstract: 140MA3
Contextual Info: M IC R O N 4K SRAM 4K X MT5C1604 X 4 SRAM 4 SRAM • High speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option • All inputs and outputs are TTL-compatible

Contextual Info: [ M IC R O N M T5C2564 64K X 4 S R A M SRAM 64K X 4 SRAM • High speed: 1 0 ,1 2 ,1 5 , 20, 25 and 35ns • High-perform ance, low-power, CM OS double-m etal process • Single +5V ±10% power supply • Easy m emory expansion w ith CE option • All inputs and outputs are TTL-com patible

Contextual Info: |U |IC R O N lEG X 1 MEG DRAM MODULE MT6D118 18 DRAM MODULE X 18 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 72-pin single-in-line package • High-performance CM OS silicon-gate process • Single 5V ±10% power supply

74LS373 PIN CONFIGURATION AND SPECIFICATIONS

Abstract: intel 80386
Contextual Info: MT56C3816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM M IC R O N SINGLE 8Kx 16 SRAM, DUAL 4Kx16 SRAM CACHE DATA SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common addresses and data; also configurable as a single 8K x 16 SRAM

Contextual Info: [M IC R O N 128K SRAM MT5C1189 X 9 SRAM 1 2 8 K x 9 SRAM FEATURES • High speed: 15*, 17, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Automatic CE pow er down • All inputs and outputs are TTL-compatible • Single +5V ±10% pow er supply

A63Z

Abstract: MT56LC32K36A6
Contextual Info: ADVANCE MT58LC32K36A6 32K x 36 SYNCHRONOUS SRAM M IC R O N 32K x 36 SRAM O P I +3.3V SUPPLY, FULLY REGISTERED I/O AND LINEAR BURST COUNTER QRAM VI FEATURES • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 7 ,1 0 ,1 2 and 15ns

Contextual Info: D S 1992 /D S 19 9 3 /D S 1994 DS1992/DS 1993 DALLAS SEMICONDUCTOR 1 Kbit/4Kbit Touch Memory DS1994 4Kbit Plus Time Touch Memory SPECIAL FEATURES • Standard 16 mm diameter and 1-W ire protocol ensure compatibility with Touch Memory family • 4096 bits of read/write nonvolatile memory S1993

sem 2107

Abstract: RT/IC sem 2107
Contextual Info: MT42C8255 256K X 8 VRAM |U |IC=RO N VRAM 256K X 8 DRAM WITH 512 X 8 SAM • • • • • • • • • • • Industry-standard pinout, tim ing and functions High-perform ance, CM OS silicon-gate process Single +5V ±10% power supply Inputs and outputs are fully TTL compatible

gp017

Abstract: ag35 ah3q VT82C686A VT82C im339 LM33B Q2N3906 EL B17 c520 U468 M/ag35 ah3q
Contextual Info: * I •- ■■ » . I ' C ' | . " " . B. ■■ G799 MB Block Diagram j ~~ e per 1 1 133 "1371“ 1 t 100 .VI. 3 1 3 6* 33 U44 M O D E/PC I F FS3/PCI0 PC11 J f lL PC 12 J J u PCI3 J 2 _ J l^ < PCM CPUSTP# CPUF PCISTPHWREFO

S1993

Abstract: 4x2 labels S1990 s2003 mirror control SKY13327-365
Contextual Info: DATA SHEET SKY13327-365LF: 0.25-2.15 GHz 4x2 Switch Matrix with Tone/Voltage Detector Applications I4 • DBS switching systems  cable TV/modems Features I2 I3 I1 OUT2  Broadband frequency range: 0.25 to 2.15 GHz  Tone and voltage control switching

N MT42C8255

Abstract: micron DRAM
Contextual Info: M T42C8255 256K X 8 VR AM UIICRON VRAM 256K x 8 DRAM WITH 512 x 8 SAM • • • • • • • • • • • PIN ASSIGNMENT (Top View Industry-standard pinout, tim ing and functions High-perform ance, CM O S silicon-gate process Single +5V ±10% power supply

OF IC 723 14 pin dip

Contextual Info: M IC R O N MT52C9007 512 x 9 FIFO F IF O 5 1 2 x 9 F IF O WITH PROGRAMMABLE FLAGS FEATURES • • • • • • • • OPTIONS Timing 15ns access 20ns access 25ns access 35ns access PIN ASSIGNMENT (Top View 28-Pin DIP 32-Pin PLCC (SA-4) (SC-1) 28 p Vcc

201296B

Abstract: tone control with pcb layout DISEQC SWITCH S1990 S1993 116I2 s2003
Contextual Info: DATA SHEET SKY13369-365LF: 0.25 – 2.15 GHz 4x2 Switch Matrix with Tone/Voltage Detector Applications I4 • DBS switching systems  Cable TV/modems Features I2 I3 I1 OUT2  Broadband frequency range: 0.25 to 2.15 GHz  Tone and voltage control switching

mt5c1604

Contextual Info: VIICRDN 4K SRAM MT5C1604 X 4 SRAM 4K X 4 SRAM • High speed: 8*, 1 0 ,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option • All inputs and outputs are TTL compatible

Contextual Info: DS1992/S1993/DS1994 D S 1 9 9 2 /D S 1 9 9 3 1Kbit/4Kbit Memory ¡Button DS1994 SEMICONDUCTOR 4Kbit Plus Time Memory {Button SPECIAL FEATURES • 4096 bits of read/write nonvolatile memory S1993 and DS1994 • 1024 bits of read/write nonvolatile memory (DS1992)

93BIY

Abstract: mt4c4256 883c
Contextual Info: M IC R O N 512K DRAM _ MODULE IV IV L /W I.U X 32, 1 MEG 512K x MT16D T 51232 16 DRAM MODULE x 32,1 MEG x 16 FAST-PAGE-MODE (MT16D(T)51232) lo w p o w e r, EXTENDED REFRESH (MT16D(T)51232 L) FEATURES • Industry-standard pinout in a 72-pin single-in-line

DS2501 transistor

Abstract: WASHING machine interfacing 8051 Sony Semiconductor Replacement Handbook 1991 touch dimmer TC 306 S PNI 12927 edn handbook dallas ds2501 NE5532 signetics texas instruments cmos mosfet MOSFET BOOK
Contextual Info: J Copyright 1996 by Dallas SemiconductorCorporation. All Rights Reserved. Dallas Semiconductor retains all ownership rights in the technology described herein. Trademarks and registered trademarks of Dallas Semiconductor include each of the following: Dallas Semiconductor Corporation