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    Untitled

    Abstract: No abstract text available
    Text: [M IC R O N 128K SRAM MT5C1189 X 9 SRAM 1 2 8 K x 9 SRAM FEATURES • High speed: 15*, 17, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Automatic CE pow er down • All inputs and outputs are TTL-compatible • Single +5V ±10% pow er supply


    OCR Scan     		PDF MT5C1189 32-Pin MT5C11B9

    jc 817

    Abstract: ir 0588 0588 N1H1
    Text: niCRON SEMICONDUCTOR INC b?E hi 1 1 5 ^ D 000^7^3 MRN S11A I 128K X 9 SRAM DIE | M IC R O N SEMICONDUCTOR tSC M 073 • SRAM DIE 128K X 9 SRAM Asynchronous MT5C1189S11A and Synchronous (MT58C1289S11A) GENERAL PHYSICAL SPECIFICATIONS • Wafer thickness = 18.5 mils ±0.5 mils


    OCR Scan     		PDF MT5C1189S11A) MT58C1289S11A) 150mm jc 817 ir 0588 0588 N1H1

    MT5C1189

    Abstract: cc1179
    Text: MICRON SEMICONDU CTOR INC b?E D • blllSHT ODQ'iaññ GfiS ■ MRN M IC R O N B MT5C1189 128KX 9 SRAM 5E.MICOMDI.CTOP. INC 128 K x 9 S R A M S R A M FEATURES • High speed: 15*, 17,20,25 and 35ns • High-performance, low-power, CMOS double-metal process


    OCR Scan     		PDF T5C1189 128KX 32-Pin MT5C1189 \21V2, MTSC1189 cc1179