116I2 Search Results

Contextual Info: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM x i- FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times

FQA6N70

Contextual Info: QFET N-CHANNEL FQA6N70 FEATURES BVdss = 700V Advanced New Design R DS ON = 1 -5 i2 Avalanche Rugged Technology lD = 6.8A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 30nC (Typ.) Extended Safe Operating Area

Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM * FEATURES • ■ ■ ■ ■ ■ Three-State Outputs ■ Fully TTL Compatible Inputs and Outputs ■ Advanced CMOS Technology High Speed Equal Access and Cycle Times — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial)

FQB6N70

Abstract: FQI6N70
Contextual Info: QFET N-CHANNEL FQB6N70, FQI6N70 FEATURES BVdss = 700V Advanced New Design R D S O N = 1 -5 i 2 Avalanche Rugged Technology lD = 6.2A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 30nC (Typ.)

Record STA 12

Contextual Info: 1 9 -0 2 8 2 ; R e v 0 ; 7 /9 4 A M E Q U A T IO N K " X U M 2 5 0 M s p s , 8 -B it A D C w ith T ra c k /H o ld _ G e n e ra l D e scrip tio n T h e in n o v a tiv e d e s ig n o f th e in te rn a l T/H a s s u re s an e xce ptiona lly w id e inpu t b a n d w id th of 1 2G H z and a p e r­

FQAF6N70

Contextual Info: QFET N-CHANNEL FQAF6N70 FEATURES BV dss = 700V Advanced New Design R DS ON = 1 -5 i2 Avalanche Rugged Technology lD = 4.8A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 30nC (Typ.)

lN4148

Abstract: DIODE LN4148 lN4744 Lloyd H. Dixon 2N3904 ND 24 volt output smps design
Contextual Info: \ dii' C 'h iM T V S o n i i i o i i d m t o r t o r p o r . i t i o n This application note describes the common post regulation methods used in power supply design and introduces the CS5101 Secondary Side Post Regulator Control IC. It also shows a detailed design example o f a dual output, current mode control, forward

P4C163

Abstract: P4C163L
Contextual Info: P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS x?- FEATURES • Full CMOS, 6T Cell ■ Single 5V±10% Power Supply ■ High Speed Equal Access and Cycle Times - 25/35ns (Commercial)