Untitled
Abstract: No abstract text available
Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM x i- FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times
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P4C150
24-Pin
28-Pin
SMD-5962-88588
-15LM
-20LM
-25LM
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PDF
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FQA6N70
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA6N70 FEATURES BVdss = 700V Advanced New Design R DS ON = 1 -5 i2 Avalanche Rugged Technology lD = 6.8A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 30nC (Typ.) Extended Safe Operating Area
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FQA6N70
1-16i2
FQA6N70
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM * FEATURES • ■ ■ ■ ■ ■ Three-State Outputs ■ Fully TTL Compatible Inputs and Outputs ■ Advanced CMOS Technology High Speed Equal Access and Cycle Times — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial)
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P4C1256
--28-Pin
144-bit
32Kx8.
requir-35C
-35L28M
-35L32M
-45PI
-425JI
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PDF
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FQB6N70
Abstract: FQI6N70
Text: QFET N-CHANNEL FQB6N70, FQI6N70 FEATURES BVdss = 700V Advanced New Design R D S O N = 1 -5 i 2 Avalanche Rugged Technology lD = 6.2A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 30nC (Typ.)
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FQB6N70,
FQI6N70
1-16i2
D2PAK/TO-263
PAK/TO-263
FQB6N70
FQI6N70
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PDF
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Record STA 12
Abstract: No abstract text available
Text: 1 9 -0 2 8 2 ; R e v 0 ; 7 /9 4 A M E Q U A T IO N K " X U M 2 5 0 M s p s , 8 -B it A D C w ith T ra c k /H o ld _ G e n e ra l D e scrip tio n T h e in n o v a tiv e d e s ig n o f th e in te rn a l T/H a s s u re s an e xce ptiona lly w id e inpu t b a n d w id th of 1 2G H z and a p e r
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FQAF6N70
Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF6N70 FEATURES BV dss = 700V Advanced New Design R DS ON = 1 -5 i2 Avalanche Rugged Technology lD = 4.8A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 30nC (Typ.)
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FQAF6N70
1-16i2
FQAF6N70
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PDF
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lN4148
Abstract: DIODE LN4148 lN4744 Lloyd H. Dixon 2N3904 ND 24 volt output smps design
Text: \ dii' C 'h iM T V S o n i i i o i i d m t o r t o r p o r . i t i o n This application note describes the common post regulation methods used in power supply design and introduces the CS5101 Secondary Side Post Regulator Control IC. It also shows a detailed design example o f a dual output, current mode control, forward
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CS5101
CS3842A
P4845-ND
P4800-ND
P4806-ND
P4812-ND
P4814-ND
P4880-ND
lN4148
DIODE LN4148
lN4744
Lloyd H. Dixon
2N3904 ND
24 volt output smps design
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PDF
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P4C163
Abstract: P4C163L
Text: P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS x?- FEATURES • Full CMOS, 6T Cell ■ Single 5V±10% Power Supply ■ High Speed Equal Access and Cycle Times - 25/35ns (Commercial)
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P4C163/P4C163L
25/35ns
25/35/45ns
P4C163L
P4C163L
-28-Pin
28-Pin
P4C163
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PDF
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