micron DRAM
Abstract: No abstract text available
Text: PRELIMINARY MT42C8255 256K X 8 VRAM MICRON 256K x 8 DRAM WITH 512 x 8 SAM VRAM FEATURES • • • • • • PIN ASSIGNMENT Top View Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply
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MT42C8255
512-cycle
300mW
40-Pin
micron DRAM
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sem 2107
Abstract: RT/IC sem 2107
Text: MT42C8255 256K X 8 VRAM |U |IC=RO N VRAM 256K X 8 DRAM WITH 512 X 8 SAM • • • • • • • • • • • Industry-standard pinout, tim ing and functions High-perform ance, CM OS silicon-gate process Single +5V ±10% power supply Inputs and outputs are fully TTL compatible
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MT42C8255
512-cycle
300mW
40-Pin
40/44-Pin
MT42C6255
sem 2107
RT/IC sem 2107
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N MT42C8255
Abstract: micron DRAM
Text: M T42C8255 256K X 8 VR AM UIICRON VRAM 256K x 8 DRAM WITH 512 x 8 SAM • • • • • • • • • • • PIN ASSIGNMENT (Top View Industry-standard pinout, tim ing and functions High-perform ance, CM O S silicon-gate process Single +5V ±10% power supply
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T42C8255
512-cycle
300mW
40-Pin
MT42C8255
N MT42C8255
micron DRAM
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Micron MT42C
Abstract: No abstract text available
Text: PRELIMINARY M T42C8255 256KX 8 VRAM MICRON I n'—r ^*rr'y VRAM 256K x 8 DRAM WITH 512x8 SAM FEATURES • • • 40-Pin SOJ Q-6 Vec C 1 SC [ 2 SO I [ 3 S02 ( 4 SOS [ 5 S0 4 [ 6 TRiOE [ 7 • NONPERSISTENT M ASKED WRITE • BLOCK WRITE • SPLIT READ TRANSFER
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512-cycle
300mW
512x8
40-Pin
MT42C8255
MT42CW55
Micron MT42C
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Untitled
Abstract: No abstract text available
Text: MI CR ON TECHNOLOGY SSE INC D b lllS 4 * ì DDDSPtiB l b 2 • MRN PRELIMINARY MT42C8255 256K X 8 VRAM M IC R O N I TECHNOJ OCY. INC. ■ t'O VRAM 256K X 8 DRAM WITH 512x8 SAM FEATURES • • • • • • • • • • • Industry standard pinout, timing, and functions
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MT42C8255
512-cycle
300mW
512x8
40-Pin
MT42C8255
WT42C8255
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