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    RFP MOSFETS Search Results

    RFP MOSFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    RFP MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    23N06

    Abstract: RFP23N06LE RF1S23N06LESM RF1S23N06LESM9A TB334 FP23N06L
    Text: NS ESIG : D NEW ents FOR placem D E e END le R 9P3 OMM d Possib UF7641 19S3S C E H R 4 e NOT mmend LE: see e HUF76 6 o e c s e Data Sheet N : R 23 M RFP N06LES 3 2 RF1S 23A, 60V, 0.065 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using


    Original     		PDF UF76419 FP23N06 TA49165. 23N06 RFP23N06LE RF1S23N06LESM RF1S23N06LESM9A TB334 FP23N06L

    UM1017

    Abstract: PMV45EN LTST-C190UBKT TPS40071 TPS40071PWP CHOKE COMMON NXP MOSFETs SOT23-MOSFET UM10177 LEDR10
    Text: UM10177 8 A PoL converter using SOT23 MOSFETs Rev. 02 — 21 December 2007 User manual Document information Info Content Keywords SOT23 MOSFET PoL PMV45EN demo board Abstract Point of Load PoL converters are at the leading edge of power supply performance in terms of power density and efficiency, however,


    Original     		PDF UM10177 PMV45EN UM10177 UM1017 LTST-C190UBKT TPS40071 TPS40071PWP CHOKE COMMON NXP MOSFETs SOT23-MOSFET LEDR10

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    10n12

    Abstract: 92CS-3780I ta9192 RFM10N15 RFM1 RFP mosfets ta9212 A9212 RFM10N12 RFP10N12
    Text: Standard Power M OSFETs- -— -——- RFM10N12, RFM10N15, RFP I0N1I2, RFP10N15 N-Channel Enhancement-Mod Power Field-Effect Transistors — - File Number 1445 % 10 A, 120 V — 150 V


    OCR Scan     		PDF RFM10N12, RFM10N15, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* RFP10M12, 10n12 92CS-3780I ta9192 RFM1 RFP mosfets ta9212 A9212

    RFL1N08

    Abstract: RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352
    Text: Standard Power MOSFETs RFL1N08, RFL1N10, RFP2N08, RFP2N10 File N um ber 1385 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 80 and 100 V rDs on : 1.05CÎ and 1.2fi Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds


    OCR Scan     		PDF RFL1N08, RFL1N10, RFP2N08, RFP2N10 RFL1N08 RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352

    RFP2N12L

    Abstract: RFL1N12L RFL1N15L RFP2N15L rfp1n12
    Text: 387SÓ81 G E S O L I D S T A T e 'd Ï » F | 3 ö 7 S D f l l DDlfl4Sfl 3 l ~ D Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number 1513 N-Channe Logic Level Power Field-Effect Transistors L2 FET)


    OCR Scan     		PDF 0Dlfl42fl RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L CS-53741 RFL1N12L RFL1N15L RFP2N12L RFP2N15L rfp1n12

    TA9401

    Abstract: TA940 RFL1P08 RFL1P10 RFP2P08 RFP2P10
    Text: SOLI» STATE 3875Ö81 DE§3Ö7S0Ö1 01 G E SÒL I D STATE Standard Power MOSFETs Q01ÛE17 1 | 0 1E 1 8 2 1 7 _ RFL1P08, RFL1P10, RFP2P08, RFP2P10 File N um ber 1535 Power MOS Field-Effect Transistors TERM INAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF RFL1P08, RFL1P10, RFP2P08, RFP2P10 RFL1P08 RFL1P10 RFP2P08 RFP2P10 PMP411A. 92CS-37569 TA9401 TA940

    RFP2N15L

    Abstract: RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12
    Text: Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number N-Channel Logic Level Power Field-Effect Transistors L2 FET o 1 and 2 A, 120 V and 150 V rDs(on): 1.750 and 1.90 Feature*: • Design optimized for 5 volt gate drive ■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits


    OCR Scan     		PDF RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L 92CS-337 RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12

    RFP2N06

    Abstract: 1N10 RFL1N10 RFL1N08 RFP2N08 RFP2N10
    Text: G E SOLID STATE Ôï i>i”|3fl7SDfll OOlflO'ï? b 3875081 G E S O L I D S T A T E Standard Power MOSFETs 01E 18097 D T -3 ? ~ RFL1N08, RFL1N10, RFP2N08, RFP2N10 * File Num ber N-Charinel Enhancement-Mode


    OCR Scan     		PDF RFL1N08, RFL1N10, RFP2N08, RFP2N10 RFL1N08 RFL1N10 RFP2N08 RFP2N10 2CS-35I75 S2CS-96138 RFP2N06 1N10

    5Q07

    Abstract: RFP mosfets RFL1N12 RFL1N15 RFP2N12 RFP2N15 rfp1n12 ta9196 TA921
    Text: Standard Power MOSFETs RFL1N12, RFL1N15, RFP2N12, RFP2N15 File N um ber 1444 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 Amperes 120 V — 150 V ro s o n : 1.75fi and 1.90 Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds


    OCR Scan     		PDF RFL1N12, RFL1N15, RFP2N12, RFP2N15 RFL1N12 RFL1N15 RFP2N12 RFP2N15* AN-7254 AN-7260. 5Q07 RFP mosfets RFP2N15 rfp1n12 ta9196 TA921

    RFL1N20L

    Abstract: RFP2N20L RFL1N18L RFP2N18L
    Text: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET


    OCR Scan     		PDF 307SG01 RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L RFL1N18L RFL1N20L RFP2N18L

    RFL1N08L

    Abstract: RFL1N10L RFP2N08L RFP2N10L
    Text: Logic-Level Power MOSFETs_ RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level Power Fielcf-Effect Transistors L2 FET 1 and 2 A, 80 V and 100 V ros(on): 1.05fi and 1 .2 0 Features: • Design optim ized fo r 5 volt gate drive


    OCR Scan     		PDF RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L 92cs-3374i RFL1N08L RFL1N10L RFP2N08L RFP2N10L

    RFL1N20L

    Abstract: RFP2N18L RFP2N20L AT 7312 RFL1N18L 92CS-J7307
    Text: Logic-Level Power MOSFETs _ _ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File N um ber 15111 N-Channel Logic Level Power Field-Effect Transistors L2 FET 1 and 2 A, 180 V and 200 V rDs<on>: 3.5 O and 3.65 fi Features: • Design optimized for 5 volt gate drive


    OCR Scan     		PDF RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L 92CS-3374I RFL1N18L RFL1N20L RFP2N18L AT 7312 92CS-J7307

    2C337

    Abstract: 92C5-37555 RFL2N05 RFL2N06 RFP4N05 RFP4N06
    Text: 01 3fl750fll 0010113 □ 3 8 7 5 0 8 1 G E S O L ID STATE Standard Power MOSFETs - 01E 18113 RFL2N05, RFL2N06, RFP4N05, RFP4N06 File Number 1497 N-Channel Enhancement-Mode Power Field-Effect Transistors 2 and 4 Amperes, 50 V - 60 V rDs on = 0.60 and 0.750


    OCR Scan     		PDF 3fl750fll RFL2N05, RFL2N06, RFP4N05, RFP4N06 9ZCS-33741 RFL2N05 RFL2N06 RFP4N05 RFP4N06* 2C337 92C5-37555

    2N15

    Abstract: RFL1N12 RFL1N15 RFP2N12 RFP2N15 RFP-zn rfp1n12
    Text: G E SOLID STATE ' DE I3Û7SGA1 GDlfllOl M T □! 0! § SOLID STATE Standard Power MOSFETs " 01E .18101 d T ' 3 ? “0 9 RFL1N12, RFL1N15, RFP2N12, RFP2N15 File Number 1444 N-Channel Enhancement-Mode


    OCR Scan     		PDF d7z39 RFL1N12, RFL1N15, RFP2N12, RFP2N15 RFL1N12 RFL1N15 RFL1N15 RFP2N12 2N15 RFP2N15 RFP-zn rfp1n12

    RFL2N05L

    Abstract: RFL2N06L RFP4N05L RFP4N06L TA9520
    Text: Logic-Level Power MOSFETs RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L File N u m be r 1560 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINALDIAGRAM 2 and 4 A, 50 V — 60 V rDs(on): 0.6 0 and 0.750 Features: • ■


    OCR Scan     		PDF RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L RFL2N05L RFL2N06L RFP4N05L RFP4N06L* RFP4N06L TA9520

    1S11

    Abstract: RFL1N18 RFL1N20 RFP2N18 RFP2N20
    Text: 3875081 G E SOLID STATE Qi DETl3ö75Dfll ODlfllDS 1 Standard Pow er M O S F E T s _ • _ ■ RFL1N18, RFL1N20, RFP2N18, RFP2N20 File N u m b e r ' 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF 75Dfll RFL1N18, RFL1N20, RFP2N18, RFP2N20 RFL1N18 RFL1N20and RFP2N18and 1S11 RFL1N20 RFP2N18

    transistor N342

    Abstract: TC1-C RFL1N08L RFL1N10L TA9525 RFP2N08L RFP2N10L RFP mosfets
    Text: 38 75081 =01 G E SOL ID S T A TE Logic-Level Power MOSFÉTs T e 1 3 ö 7 5 0 ö 1 0 0 1 0 4 2 4 t, 01E18424 D 'T ~ '~ ^ 7~ ' RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level


    OCR Scan     		PDF RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L RFL1N08L RFL1N10L RFP2N08L transistor N342 TC1-C TA9525 RFP mosfets

    TA9401

    Abstract: 92CS-37586 RFL1P08 36485 3771 RFL1P10 RFP2P08 RFP2P10
    Text: Standard Power M O S F E T s - RFL1P08, RFL1P10, RFP2P08, RFP2P10 F ile N u m b e r 1535 Power MOS Field-Eifect Transistors TERMINAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, -80 V and -100 V


    OCR Scan     		PDF RFL1P08, RFL1P10, RFP2P08, RFP2P10 RFL1P08 RFL1P10 RFP2P08 RFP2P10 92C3-37S9I 92CS-37710 TA9401 92CS-37586 36485 3771

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    2N06

    Abstract: RFL2N05 RFL2N06 RFP4N05 RFP4N06
    Text: Standard Power M O S F E T s - RFL2N05, RFL2N06, RFP4N05, RFP4N06 File N u m be r 1497 N-Channel Enhancement-Mode Power Field-Effect Transistors 2 and 4 Amperes, 50 V - 60 V ro s o n = 0.60 and 0.750 Features: • SOA is power-dissipation limited


    OCR Scan     		PDF RFL2N05, RFL2N06, RFP4N05, RFP4N06 92CS-3374I RFL2N05 RFL2N06 RFP4N05 RFP4N06* 92CS-Ã 2N06 RFP4N06

    RFL2N05L

    Abstract: TA9520 RFL2N06L RFP4N05L RFP4N06L rfl2n06 FM09 92CS-33T4
    Text: 3875081 G E' S O L I D STATECI Logic-Level Power MOSFETs DE | 3 Û 7 5 D Û 1 E I di T -3 7 -0 ? _ RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L F ile N u m b e r 1560 Power Logic Level MOSFETs T E R M IN A L D IA G R A M


    OCR Scan     		PDF lfl43b T-37-0" RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L 92CS-33T4) RFL2N05L RFL2N06L S2CS-38I73 TA9520 RFP4N05L RFP4N06L rfl2n06 FM09 92CS-33T4

    f25n06l

    Abstract: F25N06 RFP2506L RFP25N06L an7254 TA9638
    Text: Logic-Level Power MOSFETs RFP25N06L File Number 2044 N-Cnannel Logic Level Power Field-Effect Transistors L2FET 25 A, 50 V - 60 V rDs(on) = 0.085 O Features: N-CHANNEL ENHANCEMENT MODE • Design optim ized fo r 5 volt gate drive ■ Can be driven directly from Q-MOS,


    OCR Scan     		PDF RFP25N06L RFP25N06L* CATOFP25N0GLCF2 92CS-37075 AN7254 AN7260. f25n06l F25N06 RFP2506L RFP25N06L TA9638

    RFP6P10

    Abstract: 37149 RFM6P08 RFM6P10 RFP6P08 MCI 1496 P 2C3370
    Text: E SOLID STATE D T | 3a7SDfll 0Dlfl2aS 0 H Ì ¿töS5081 G E S O L I D S T A T E 0 1E 18225 Standard Power MOSFETs _ RFM6P08, RFM6P10, RFP6P08, RFP6P10 D T -39-^i File Number 1490 P-Channel Enhancement-Mode Power Field-Effect Transistors 6 A, 80 V — 100 V


    OCR Scan     		PDF 3fl750fll D01fl25S RFM6P08, RFM6P10, RFP6P08, RFP6P10 RFM6P08 RFM6P10 RFP6P08 RFP6P10* 37149 MCI 1496 P 2C3370