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    2N06 Search Results

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    2N06 Price and Stock

    Infineon Technologies AG BSC012N06NSATMA1

    MOSFET N-CH 60V 100A TSON-8
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    onsemi NVMYS6D2N06CLTWG

    MOSFET N-CH 60V 17A/71A 4LFPAK
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    Infineon Technologies AG IQE022N06LM5CGATMA1

    TRENCH 40<-<100V
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    onsemi NVMYS022N06CTWG

    T6 60V SL LFPAK4 5X6
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    onsemi NTMYS2D2N06CLTWG

    MOSFET N-CH 60V 31A/185A LFPAK4
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    Find more 2N06 price and stock on Findchips.com

    2N06 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N06 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N0615 Infineon Technologies Published by Original PDF
    2N06L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N06RLE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    12N6LE

    Abstract: 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06
    Text: [ /Title RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E /Subject (12A, 60V, 0.135 Ohm, NChannel, Logic Level, Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel, Logic Level, Power MOS- 2N06RLE, 2N06RLESM, 2N06RLE Data Sheet


    Original     		2N06R RFD12 N06RL RFP12 RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE 12N6LE 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06 PDF

    SP2605F

    Abstract: 2N2222A raytheon low noise transistors rf 2N4033 2N0720A 2N0718A 2n2907a raytheon 2N065 SP2605QF "dual TRANSISTORs" pnp npn
    Text: Small Signal Transistors Small Signal Transistors Hermetic Seal Raytheon Semiconductor offers a wide variety of Industry standard and sole source high reliability (JAN, JANTX, Product 2N0657* 2N0697* 2N0706* 2N0718A 2N0720A* 2N0910* 2N0918 2N0930 2N1131"


    OCR Scan     		2N0657* 2N0697* 2N0706* 2N0718A 2N0720A* 2N0910* 2N0918 2N0930 2N1131" 2N1132* SP2605F 2N2222A raytheon low noise transistors rf 2N4033 2N0720A 2n2907a raytheon 2N065 SP2605QF "dual TRANSISTORs" pnp npn PDF

    JAN2N2222A

    Abstract: JANTX2N2222A JANTXV2N2222A 2N0696 JAN2N1613 JANTXV2N3737 JANTX2N2060 JAN2N0497 JAN2N3700 NPN3
    Text: Micmsemi NPN Transistors Part Number JAN2N2222A JANTX2N2221A JANTX2N2222A JANTXV2N2221A JANTXV2N2222A 2N3700 JAN2N3700 JANTX2N3700 JANTXV2N3700 2N3737 JAN2N3737 JANTX2N3737 JANTXV2N3737 2N0696 2N0697 2N0696 2N0696S 2N0697 2N0697S 2N3904 2N4401


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS X 2N06RLE Semiconductor 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET juiy 1998 Description Features 2A, 60V The RFW 2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which


    OCR Scan     		RFW2N06RLE 2N06RLE AN7254 AN7260. PDF

    2N06L35

    Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
    Text: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD26N06S2L-35 PG-TO252-3-11 2N06L35 726-IPD26N06S2L-35 2N06L35 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3 PDF

    2N0640

    Abstract: BSPD25N06S2-40 SPD25N06S2-40 a6024
    Text: SPD25N06S2-40 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m ID 29 A P- TO252 -3-11 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427


    Original     		SPD25N06S2-40 Q67060-S7427 2N0640 BSPD25N06S2-40, SPD25N06S2-40 2N0640 BSPD25N06S2-40 a6024 PDF

    DIODE H5 SMD

    Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
    Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package


    Original     		SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 2N06H5 Q67060-S6053 BSPP80N06S2-H5 BSPB80N06S2-H5, DIODE H5 SMD 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5 PDF

    2N06L06

    Abstract: DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a
    Text: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 6.3 mΩ ID 80 A P- TO263 -3-2 • 175°C operating temperature P- TO220 -3-1 • Avalanche rated • dv/dt rated


    Original     		SPP80N06S2L-06 SPB80N06S2L-06 Q67060-S6033 Q67060-S6034 2N06L06 BSPP80N06S2L-06 BSPB80N06S2L-06, 2N06L06 DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a PDF

    2n06v

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N06V/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOSV S O -8 for S urface Mount N-Channel Enhancement-Mode Silicon Gate DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS RDS on = 0.115 OHM TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This


    OCR Scan     		MMDF2N06V/D MMDF2N06VD 2n06v PDF

    2N0608

    Abstract: Q67040-S4284 AS3500 SPB80N06S2-08 SPP80N06S2-08 2N060
    Text: SPP80N06S2-08 SPB80N06S2-08 Preliminary data OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 8 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated


    Original     		SPP80N06S2-08 SPB80N06S2-08 P-TO220-3-1 Q67040-S4283 2N0608 P-TO263-3-2 Q67040-S4284 2N0608 Q67040-S4284 AS3500 SPB80N06S2-08 SPP80N06S2-08 2N060 PDF

    2n0607

    Abstract: 2n0607 equivalent IPI80N06S2-07 SP0002-18818 d68 smd code 2N06 IPP80N06S2-07 SP000218810 SP0002-18810 18818
    Text: IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18818 2N0607 2n0607 2n0607 equivalent IPI80N06S2-07 SP0002-18818 d68 smd code 2N06 IPP80N06S2-07 SP000218810 SP0002-18810 18818 PDF

    37 TV samsung lcd Schematic circuit diagram

    Abstract: smd 475 20k 233 DIODE samsung lcd tv power supply schematic pcb circuit diagram of crt tv samsung BB509 ICSL6256 BA41-01039A schematic diagram crt tv samsung schematic Samsung TV led backlight AP4435
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		BA41-01039A BA41-01040A BA41-01041A BA41-01039A /Users/mobile29/mentor/Bonn/BONN-INT 37 TV samsung lcd Schematic circuit diagram smd 475 20k 233 DIODE samsung lcd tv power supply schematic pcb circuit diagram of crt tv samsung BB509 ICSL6256 schematic diagram crt tv samsung schematic Samsung TV led backlight AP4435 PDF

    2N0615

    Abstract: INFINEON PART MARKING to252 BSPD30N06S2-15 P-TO252 SPD30N06S2-15
    Text: SPD30N06S2-15 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID •=175°C operating temperature V 14.7 mΩ 30 • Avalanche rated A P-TO252 • dv/dt rated Type SPD30N06S2-15 Package


    Original     		SPD30N06S2-15 P-TO252 Q67040-S4253 2N0615 BSPD30N06S2-15, SPD30N06S2-15 2N0615 INFINEON PART MARKING to252 BSPD30N06S2-15 P-TO252 PDF

    2N0640

    Abstract: SPD25N06S2-40 534 SMD Marking Code BSPD25N06S2-40
    Text: SPD25N06S2-40 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 40 mΩ ID 29 A • 175°C operating temperature • Avalanche rated P- TO252 -3-11 • dv/dt rated Type SPD25N06S2-40 Package Ordering Code


    Original     		SPD25N06S2-40 Q67060-S7427 2N0640 BSPD25N06S2-40, SPD25N06S2-40 2N0640 534 SMD Marking Code BSPD25N06S2-40 PDF

    2N0615

    Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15
    Text: SPD30N06S2-15 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature V 14.7 mΩ 30 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD30N06S2-15 Package Ordering Code


    Original     		SPD30N06S2-15 Q67040-S4253 2N0615 BSPD30N06S2-15, SPD30N06S2-15 2N0615 ANPS071E BSPD30N06S2-15 PDF

    2N06L05

    Abstract: INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS
    Text: SPP80N06S2L-05 SPB80N06S2L-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.5 mΩ • Logic Level ID 80 A •=175°C operating temperature P-TO263-3-2 • Enhancement mode P-TO220-3-1


    Original     		SPP80N06S2L-05 SPB80N06S2L-05 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4246 2N06L05 P-TO263-3-2 2N06L05 INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS PDF

    2n0605

    Abstract: BSPP80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 6020G 6840H
    Text: SPP80N06S2-05 SPB80N06S2-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.8 mΩ •=175°C operating temperature ID 80 A • Avalanche rated P-TO263-3-2 • Enhancement mode P-TO220-3-1


    Original     		SPP80N06S2-05 SPB80N06S2-05 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4245 2N0605 P-TO263-3-2 2n0605 BSPP80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 6020G 6840H PDF

    2n06l07

    Abstract: SPB80N06S2L-07 SPP80N06S2L-07 BSPB80N06S2L-07
    Text: SPP80N06S2L-07 SPB80N06S2L-07 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 7 mΩ ID 80 A • Enhancement mode • Logic Level •=175°C operating temperature P-TO263-3-2 P-TO220-3-1 • Avalanche rated


    Original     		SPP80N06S2L-07 SPB80N06S2L-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4285 2N06L07 P-TO263-3-2 2n06l07 SPB80N06S2L-07 SPP80N06S2L-07 BSPB80N06S2L-07 PDF

    2N06LH5

    Abstract: No abstract text available
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated


    Original     		SPP80N06S2L-H5 SPB80N06S2L-H5 P-TO220-3-1 P-TO263-3-2 P-TO220-3-1 Q67060-S6054 Q67060-S6055 2N06LH5 PDF

    2n06l23

    Abstract: No abstract text available
    Text: SPD30N06S2L-23 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 23 mΩ ID 30 A • Enhancement mode • Logic Level • 175°C operating temperature P-TO252 • Avalanche rated • dv/dt rated Type Package


    Original     		SPD30N06S2L-23 P-TO252 Q67060-S7410 2N06L23 BSPD30N06S2L-23, SPD30N06S2L-23 2n06l23 PDF

    2n0609

    Abstract: Q67060-S6025 Q67060-S6027 SPP80N06S2-09 3140PF 2N060 INFINEON PART MARKING to263
    Text: SPP80N06S2-09 SPB80N06S2-09 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 R DS on 9.1 m ID 80 A P- TO263 -3-2  Avalanche rated V P- TO220 -3-1  dv/dt rated Type SPP80N06S2-09 Package


    Original     		SPP80N06S2-09 SPB80N06S2-09 Q67060-S6025 Q67060-S6027 2N0609 BSPP80N06S2-09 BSPB80N06S2-09, Q67060-S6027 3140PF 2N060 INFINEON PART MARKING to263 PDF

    2n06l23

    Abstract: No abstract text available
    Text: SPD30N06S2L-23 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V R DS on 23 m ID 30 A P- TO252 -3-11 175°C operating temperature  Avalanche rated  dv/dt rated Type SPD30N06S2L-23 Package Ordering Code


    Original     		SPD30N06S2L-23 SPD30N06S2L-23 Q67060-S7410 2N06L23 BSPD30N06S2L-23, 2n06l23 PDF

    2n0680

    Abstract: BSPD14N06S2-80
    Text: SPD14N06S2-80 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 V R DS on 80 m ID 17 A P- TO252 -3-11  Avalanche rated  dv/dt rated Type SPD14N06S2-80 Package Ordering Code P- TO252 -3-11 Q67060-S7423


    Original     		SPD14N06S2-80 SPD14N06S2-80 Q67060-S7423 2N0680 200Aay BSPD14N06S2-80, 2n0680 BSPD14N06S2-80 PDF

    2N06LH5

    Abstract: No abstract text available
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated


    Original     		SPP80N06S2L-H5 SPB80N06S2L-H5 P-TO263-3-2 P-TO220-3-1 Q67060-S6054 2N06LH5 2N06LH5 PDF