TA9520
Abstract: No abstract text available
Text: RFL2N05L, RFL2N06L HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, Logic Level, N-Channel Power MOSFETs July 1998 Description Features 2A, 50V and 60V Com patible with Autom otive Drive Requirements The RFL2N05L and RFL2N06L are N-channel enhancement
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OCR Scan
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RFL2N05L,
RFL2N06L
RFL2N05L
RFL2N06L
TA9520.
0-95i2
AN7254
AN7260.
TA9520
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RFL2N05L
Abstract: RFL2N06L RFP4N05L RFP4N06L TA9520
Text: Logic-Level Power MOSFETs RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L File N u m be r 1560 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINALDIAGRAM 2 and 4 A, 50 V — 60 V rDs(on): 0.6 0 and 0.750 Features: • ■
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OCR Scan
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RFL2N05L,
RFL2N06L,
RFP4N05L,
RFP4N06L
RFL2N05L
RFL2N06L
RFP4N05L
RFP4N06L*
RFP4N06L
TA9520
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rfl2n06
Abstract: AN7254 AN7260 RFL2N06L
Text: RFL2N06L Data Sheet October 1999 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 50V and 60V The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,
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Original
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RFL2N06L
RFL2N06L
TA952ingements
rfl2n06
AN7254
AN7260
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PDF
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