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KEMET Corporation C315C334K5R5TA9192 .330UF 50.0V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C315C334K5R5TA9192	Bulk			1,500	1 - 10 - 100 - 1000 - 10000 $0.14742	Buy Now

TA9192 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TA9192A		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
TA9192B		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF

TA9192 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ta9192 Abstract: TA919 AN7254 AN7260 RFL4N12 RFL4N15 Text: [ /Title RFL4N 12, RFL4N1 5 /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark RFL4N12, RFL4N15 Semiconductor 4A, 120V and 150V, 0.400 Ohm,	Original	O205AF) RFL4N12, RFL4N15 25BVDSS AN7254 AN7260. ta9192 TA919 AN7260 RFL4N12 RFL4N15	PDF
ta9192 Abstract: No abstract text available Text: W vys S RFL4N12, RFL4N15 Semiconductor y 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 4A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	OCR Scan	RFL4N12, RFL4N15 TA9192. AN7254 AN7260. ta9192	PDF
M339 Abstract: RFP10N15 transistor m339 ta9192 RFP10N12 RFM10N12 RFM10N15 Text: □1 DE I 3fl7SDfll DDlflim S \| ~ 3875081 G E SOLID STATE 0 1E 18141 D T -3 9 ’] / Standard Power MOSFETs_ RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber 1445 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi	OCR Scan	3fl75Dfll RFM10N12, RFM10N15, RFP10N12, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* switchin5081" M339 transistor m339 ta9192	PDF
ta9192 Abstract: RFP10N12 RFM10N12 RFM10N15 RFP10N15 Text: RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi 1445 Features: co-V-'hI T j O • S O A is pow er-dissipation lim ited ■ N an o seco n d sw itch in g sp e e d s	OCR Scan	RFM10N12, RFM10N15, RFP10N12, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* ta9192 RFP10N15	PDF
10n12 Abstract: 92CS-3780I ta9192 RFM10N15 RFM1 RFP mosfets ta9212 A9212 RFM10N12 RFP10N12 Text: Standard Power M OSFETs- -— -——- RFM10N12, RFM10N15, RFP I0N1I2, RFP10N15 N-Channel Enhancement-Mod Power Field-Effect Transistors — - File Number 1445 % 10 A, 120 V — 150 V	OCR Scan	RFM10N12, RFM10N15, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* RFP10M12, 10n12 92CS-3780I ta9192 RFM1 RFP mosfets ta9212 A9212	PDF