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    N CHANNEL MOSFET 1400 V Search Results

    N CHANNEL MOSFET 1400 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL MOSFET 1400 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9n160g

    Abstract: IXBH 9N160G D-68623 ixbh9n160g 9N140G
    Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 9N140G IXBH 9N160G N-Channel, Enhancement Mode MOSFET compatible C VCES IC25 VCE sat tfi = = = = 1400/1600 V 9A 4.9 V typ. 70 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Preliminary Data


    Original     		PDF 9N140G 9N160G O-247 9N140G 9-140/160G 9n160g IXBH 9N160G D-68623 ixbh9n160g

    MRF6V10010NR4

    Abstract: AN1955 d2460 A03TK
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10010N MRF6V10010NR4 MRF6V10010NR4 AN1955 d2460 A03TK

    MMRF1019NR4

    Abstract: No abstract text available
    Text: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MMRF1019N MMRF1019NR4 7/2014Semiconductor, MMRF1019NR4

    cree rf

    Abstract: UPF14060 UPF14060F UPF14060P
    Text: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in


    Original     		PDF UPF14060 UPF14060F cree rf UPF14060 UPF14060F UPF14060P

    Untitled

    Abstract: No abstract text available
    Text: UPF14060 60W, 1.66 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in


    Original     		PDF UPF14060 UPF14060F 540mA 540mA,

    MRF6V10010

    Abstract: MRF6V10010NR4 KEMET C1206C104K5RACTR AN1955 ATC100B470JT500XT FREESCALE PACKING A113 A114 A115 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 2, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10010N MRF6V10010NR4 MRF6V10010 MRF6V10010NR4 KEMET C1206C104K5RACTR AN1955 ATC100B470JT500XT FREESCALE PACKING A113 A114 A115 C101

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10010N MRF6V10010NR4

    F35V

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10010N MRF6V10010NR4 MRF6V10010N F35V

    transistor equivalent table c101

    Abstract: KEMET C1206C104K5RACTR CRCW12063301FKEA MRF6V10010N A03TKlc C1206C104K5RACTR
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 0, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10010N MRF6V10010NR4 MRF6V10010N transistor equivalent table c101 KEMET C1206C104K5RACTR CRCW12063301FKEA A03TKlc C1206C104K5RACTR

    NX3008NBKMB

    Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
    Text: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 DFN1006B-3, AEC-Q101 Q3/2012 NX3008NBKMB BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180EF TH 2190 HOT Transistor

    sm 4500

    Abstract: No abstract text available
    Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21125E AGR21125EU AGR21125EF AGR21125End sm 4500

    C14A

    Abstract: AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A sm 4500
    Text: AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21125E AGR21125E AGR21125EU AGR21125EF M-AGR21125F AGR21125XF 12-digit C14A AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A sm 4500

    FS20KM-5

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 . •250V • TDS ON (MAX) 0 .1 9 0 ! » I d . 20A 2000V ! »V j dss ¡ • Viso. APPLICATION SMPS, DC-DC Converter, battery charger, power


    OCR Scan     		PDF FS20KM-5 FS20KM-5

    z16f

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS20VS-5 HIGH-SPEED SWITCHING USE APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­ sonal computer etc. MAXIMUM RATINGS To . 25’C Symbol VDSS V gss Id Id m Po Tch Tstg


    OCR Scan     		PDF FS20VS-5 z16f

    2sk mosfet

    Abstract: 2SK904
    Text: 2SK904 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators


    OCR Scan     		PDF 2SK904 2sk mosfet 2SK904

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE FK20VS-6 • V dss . 300V • ros O N (M AX ) . 0.33Q • ID . 20A • Integrated Fast Recovery Diode (M A X .)


    OCR Scan     		PDF FK20VS-6 150ns

    Untitled

    Abstract: No abstract text available
    Text: 2SK1659-L.S SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features ^ ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage ■ Applications • S w itch in g regulators


    OCR Scan     		PDF 2SK1659-L

    2sk mosfet

    Abstract: 2SK903
    Text: 2SK903 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET • Features ■ O utline Drawings • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving pow er • High voltage ■Applications • Sw itching regulators


    OCR Scan     		PDF 2SK903 2sk mosfet 2SK903

    B1470

    Abstract: FS20KM-5 K775 M-1510 MAX240 FS 8201 mitsubishi fs20km-5
    Text: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 • V dss . 2.8 ± 0 .2 250V • rDS ON (MAX) . 0 .1 9Q • Id


    OCR Scan     		PDF FS20KM-5 -220FN MAX240Â MAX60S O-22Q, O-220FN, O-220C, O-220S B1470 FS20KM-5 K775 M-1510 MAX240 FS 8201 mitsubishi fs20km-5

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS20UM-6 HIGH-SPEED SWITCHING USE FS20UM-6 OUTLINE DRAWING D im e n sio n s in mm « • Vdss . 300V • TDS ON (MAX) Î- G A T E DRAIN 3;.: S O U R C E 4) O R AiN


    OCR Scan     		PDF FS20UM-6 O-220

    zo102

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK20SM-6 HIGH-SPEED SWITCHING USE FK20SM-6 OUTLINE DRAWING , Dimensions in mm 4 .5 1 5 .9 M A X . 10 3.2 ; gj cgi ¡ w CJ| t e I * 2 : 2Í 5.45_J _! JLÎË. c 2.8 f 11 TC1T1 1t"yL iI • Voss . 300V


    OCR Scan     		PDF FK20SM-6 150ns zo102

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS20VS-6 HIGH-SPEED SWITCHING USE APPLICATION SM P S , D C -D C Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­ sonal computer etc. MAXIMUM RATINGS Tc =25°C Ratings Unit vdss Drain-source voltage


    OCR Scan     		PDF FS20VS-6 5710s

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE FK20VS-6 OUTLINE DRAWING I q Dim ensions in mm J w e o +i Q w r oj CO V d s s . 3 0 0 V q w e r q o- GATE DRAIN SOURCE


    OCR Scan     		PDF FK20VS-6 150ns O-22QS 57kh23