A03TK Search Results

G2225X7R225KT3AB

Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from

MRF6V10010NR4

Abstract: AN1955 d2460 A03TK
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

ATC600F241JT250XT

Abstract: GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT AFT09MS031NR1 inductor 50 NH GRM31CR61H106KA12
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 1, 8/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of

MMRF1019NR4

Contextual Info: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

AFT09MS031NR1

Abstract: Z11-Z16 GRM21BR72A103KA01B ATC100A220JT150XT transistor Z6 Coilcraft Design Tools
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of

A03TK

Abstract: TRANSISTOR J406 A114 A115 AN1955 C101 JESD22 MRF6VP21KHR6 A03TKLC C2227
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 1, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical

A9M15

Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

Contextual Info: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

TUI-lf-9

Abstract: ATC700B392JT50X
Contextual Info: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched

A5M06

Abstract: Transistor Z17
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

ATC100B102JT50XT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

MRF6VP2600KH

Abstract: TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

AFT504

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

Z6 3pin

Abstract: J262 AFT09MS007NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

Fair-Rite bead

Abstract: AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

F35V

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

transistor equivalent table c101

Abstract: KEMET C1206C104K5RACTR CRCW12063301FKEA MRF6V10010N A03TKlc C1206C104K5RACTR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 0, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

Tantalum Capacitor kemet

Abstract: 1000 watts power amp circuit diagram 1000 watts ups circuit diagram Amp. mosfet 1000 watt AN1955 CPF320R000FKE14 tuo-4 Illinois Capacitor MRF6VP21KHR6 rf push pull mosfet power amplifier
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

A5M0

Abstract: IC 2 5/A5M06
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this