UPF14060 Search Results

UPF14060 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UPF14060		Cree	LDMOS FETs in Class AB Operation Linear 1.4 GHz		Original	PDF
UPF14060F		Cree	60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS		Original	PDF
UPF14060F		Cree	FET Transistor, 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF
UPF14060P		Cree	60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS		Original	PDF
UPF14060P		Cree	FET Transistor, 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF

UPF14060 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
cree rf Abstract: UPF14060 UPF14060F UPF14060P Text: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in	Original	PDF	UPF14060 UPF14060F cree rf UPF14060 UPF14060F UPF14060P
Untitled Abstract: No abstract text available Text: UPF14060 60W, 1.66 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in	Original	PDF	UPF14060 UPF14060F 540mA 540mA,
ultrarf Abstract: UPF14060 UPF14060F UPF14060P Text: UPF14060 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications at 1400MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB	Original	PDF	UPF14060 1400MHz. 16QAM, UPF14060F ultrarf UPF14060 UPF14060F UPF14060P
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	PDF	BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b