UPF14060F Search Results

UPF14060F Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UPF14060F		Cree	60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS		Original	PDF
UPF14060F		Cree	FET Transistor, 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF

UPF14060F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
cree rf Abstract: UPF14060 UPF14060F UPF14060P Contextual Info: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in	Original	UPF14060 UPF14060F cree rf UPF14060 UPF14060F UPF14060P	PDF
Contextual Info: UPF14060 60W, 1.66 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in	Original	UPF14060 UPF14060F 540mA 540mA,	PDF
ultrarf Abstract: UPF14060 UPF14060F UPF14060P Contextual Info: UPF14060 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications at 1400MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB	Original	UPF14060 1400MHz. 16QAM, UPF14060F ultrarf UPF14060 UPF14060F UPF14060P	PDF

Catalog Datasheet

Type

Document Tags

PDF

cree rf

Abstract: UPF14060 UPF14060F UPF14060P
Contextual Info: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in

Original

UPF14060 UPF14060F cree rf UPF14060 UPF14060F UPF14060P

PDF

Contextual Info: UPF14060 60W, 1.66 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in

Original

UPF14060 UPF14060F 540mA 540mA,

PDF

ultrarf

Abstract: UPF14060 UPF14060F UPF14060P
Contextual Info: UPF14060 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications at 1400MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB

Original

UPF14060 1400MHz. 16QAM, UPF14060F ultrarf UPF14060 UPF14060F UPF14060P

PDF