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Advanced Semiconductor Inc AGR21180EF RF MOSFET Transistors 2.11-2.17GHz 38Watt Gain 14dB
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Mouser Electronics	AGR21180EF					1 - 10 $90.38 100 $86.65 1000 $86.65 10000 $86.65	Get Quote

AGR21180EF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR21180EF		Agere Systems	FET, 180W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF

AGR21180EF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TH 2190 HOT Transistor Abstract: No abstract text available Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21180EF TH 2190 HOT Transistor
TH 2190 HOT Transistor Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21 Text: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21180EF AGR21180EF AGR19K180U AGR21180XF 12-digit TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A GHZ-21
TH 2190 HOT Transistor Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A Text: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21180EF AGR21180EF DS04-167RFPP DS04-124RFPP) TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A
j792 Abstract: TH 2190 HOT Transistor Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21180EF DS04-124RFPP DS02-275RFPP) j792 TH 2190 HOT Transistor
AGR21180EF Abstract: AGR21180EU JESD22-A114 Text: Preliminary Product Brief April 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21180E AGR21180E AGR21180EU AGR21180EF PB03-097RFPP PB03-072RFPP) AGR21180EF AGR21180EU JESD22-A114
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
TH 2190 HOT Transistor Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21180E AGR21180EU AGR21180EF DS02-275RFPP TH 2190 HOT Transistor