TH 2190 HOT Transistor
Abstract: No abstract text available
Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
|
Original
|
AGR21180EF
TH 2190 HOT Transistor
|
PDF
|
TH 2190 HOT Transistor
Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21
Text: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
|
Original
|
AGR21180EF
AGR21180EF
AGR19K180U
AGR21180XF
12-digit
TH 2190 HOT Transistor
TH 2190 mosfet
JESD22-C101A
GHZ-21
|
PDF
|
TH 2190 HOT Transistor
Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A
Text: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
|
Original
|
AGR21180EF
AGR21180EF
DS04-167RFPP
DS04-124RFPP)
TH 2190 HOT Transistor
TH 2190 mosfet
JESD22-C101A
|
PDF
|
j792
Abstract: TH 2190 HOT Transistor
Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
|
Original
|
AGR21180EF
DS04-124RFPP
DS02-275RFPP)
j792
TH 2190 HOT Transistor
|
PDF
|
AGR21180EF
Abstract: AGR21180EU JESD22-A114
Text: Preliminary Product Brief April 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
|
Original
|
AGR21180E
AGR21180E
AGR21180EU
AGR21180EF
PB03-097RFPP
PB03-072RFPP)
AGR21180EF
AGR21180EU
JESD22-A114
|
PDF
|
AGRA10EM
Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station
|
Original
|
CA03-005RFPP-7
CA03-005RFPP-6)
AGRA10EM
APP550
APP550TM
AGR09085EF
APP550TM and APP530TM
400-kHz
agra 30
TAAD08JU2
AGR09030EF
AGR09030GUM
|
PDF
|
TH 2190 HOT Transistor
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
|
Original
|
AGR21180E
AGR21180EU
AGR21180EF
DS02-275RFPP
TH 2190 HOT Transistor
|
PDF
|