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    AGR21180E Search Results

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    AGR21180E Price and Stock

    Advanced Semiconductor Inc AGR21180EF

    RF MOSFET Transistors 2.11-2.17GHz 38Watt Gain 14dB
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    Mouser Electronics AGR21180EF
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    • 10 $90.38
    • 100 $86.65
    • 1000 $86.65
    • 10000 $86.65
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    AGR21180E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR21180EF Agere Systems FET, 180W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR21180EU Agere Systems FET, 180W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGR21180E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180EF TH 2190 HOT Transistor

    AGR21180EF

    Abstract: AGR21180EU JESD22-A114
    Text: Preliminary Product Brief April 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180E AGR21180E AGR21180EU AGR21180EF PB03-097RFPP PB03-072RFPP) AGR21180EF AGR21180EU JESD22-A114

    TH 2190 HOT Transistor

    Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21
    Text: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21180EF AGR21180EF AGR19K180U AGR21180XF 12-digit TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A GHZ-21

    TH 2190 HOT Transistor

    Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180EF AGR21180EF DS04-167RFPP DS04-124RFPP) TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A

    j792

    Abstract: TH 2190 HOT Transistor
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180EF DS04-124RFPP DS02-275RFPP) j792 TH 2190 HOT Transistor

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180E AGR21180EU AGR21180EF DS02-275RFPP TH 2190 HOT Transistor

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


    Original     		PDF cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM