AVALANCHE TRANSISTOR
Abstract: transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR
Text: IRF250 Data Sheet March 1999 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 30A, 200V Ordering Information IRF250 TO-204AE • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
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IRF250
O-204AE
TB334
TA09295.
AVALANCHE TRANSISTOR
transistor irf250
5 pin relay 12v 30a
IRF250
irf250 dc motor
MOSFET IRF250
irf250 datasheet
TB334
160V 30A TRANSISTOR
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IRF250
Abstract: mosfet 30a 200v 200mJ irf250 datasheet mosfet 30A transistor irf250 330mh avalanche diode 30A mosfet 50v 30a
Text: IRF250 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)
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IRF250
state3500
300ms,
IRF250
mosfet 30a 200v
200mJ
irf250 datasheet
mosfet 30A
transistor irf250
330mh
avalanche diode 30A
mosfet 50v 30a
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Untitled
Abstract: No abstract text available
Text: IRF250 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)
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IRF250
300ms,
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IRF250SM
Abstract: No abstract text available
Text: SEME IRF250SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 200V 14A 0.100W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF
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IRF250SM
220SM
00A/ms
300ms,
IRF250SM
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Untitled
Abstract: No abstract text available
Text: IRF250SM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D)14 @Temp (øC)100# IDM Max (@25øC Amb)88 @Pulse Width (s) (Condition)300m Absolute Max. Power Diss. (W)100# Minimum Operating Temp (øC)-55
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IRF250SM
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Untitled
Abstract: No abstract text available
Text: IRF250R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D)19 @Temp (øC)100 IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ
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IRF250R
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Untitled
Abstract: No abstract text available
Text: IRF250 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D)19 @Temp (øC)100 IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55
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IRF250
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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IRF150 MOSFET AMP circuit
Abstract: forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942 irf150
Text: Paralleling Of Power MOSFETs For Higher Power Output James B. Forsythe, Member IEEE International Rectifier, E1 Segundo, California Abstract - Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel MOSFET branches are mapped over wide operating ranges. Unbalance generator magnitudes are given
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IRF150
IRF150 MOSFET AMP circuit
forsythe
MOSFET IRF150
1. A 48V, 200A Chopper For Motor S. Clemente
A2JA
Chopper For Motor S. Clemente ant B. Pelly
IRF9130
R. Severns "Controlling Oscillation in
AN942
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Untitled
Abstract: No abstract text available
Text: IRF250SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRF250SMD
IRFN250"
IRFN250SMD
IRFN250SMD-JQR-B
O276AB)
3500pF
190nC
190nC
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IRF250SMD
Abstract: IRF250S
Text: IRF250SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRF250SMD
00A/ms
300ms,
IRF250SMD
IRF250S
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Untitled
Abstract: No abstract text available
Text: IRF250SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRF250SMD
00A/ms
300ms,
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irf630 irf640
Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
Text: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший
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220AB
0RFP25N05
RFP50N05
RFP22N10
RFP40N10
IRFP450
IRFP460
IRFPG40
IRF9510
irf630 irf640
IRF250N
Irfp250 irfp460
IRF6404
MOSFET IRF460
irf460 to-247
FET IRFP450
IRF510 mosfet irf640
MOSFET IRF460 TO 247
MOSFET IRF
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Untitled
Abstract: No abstract text available
Text: IRFN250SMD 2N7225U1 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 200V 27.4A Ω 0.100Ω FEATURES 1 6 .0 2 (0 .6 3 1 )
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IRFN250SMD
2N7225U1
300ms,
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Untitled
Abstract: No abstract text available
Text: nil Étti IN I SEM E IRF250 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 200V 30A V DSS ID(cont) 0.085Q ^D S (on) FEATURES M * 20.32 (0.800) 118.80 a an in ia < w (0.740) dia. • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ • SIMPLE DRIVE REQUIREMENTS
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IRF250
200mJ
Dra20
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ixfh26n60q
Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY
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SI4466DY
SI4966DY
SI9925DY
SI9942DY
2SK1388
T0220AB
IRF7319
IRF7413
IRF7455
IRL2203N
ixfh26n60q
2SK2333
2SK2761
IRF1405
BUZ345
BSS89
irfp250n
P9NB60
irfp260n
2sk2671
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sot23 BS170
Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120
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BS107
BSS123
BS170
BSS138
BS108
BSN304
BSS89
IRFD310
IRFD420
IRFD210
sot23 BS170
2SK2671
P3NB60
IXFN27N80
IRFL014N
STP22NE10L
irf6348
IRF7305
rfp40n
IXTN21N100
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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pf 4fl datasheet
Abstract: IRF250 SFF250
Text: SsDII PRELIMINARY SFF250 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 30 AMP 200 VOLTS 0.085 Q N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: Rugged construction with poly silicon gate
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670-SSDI
SFF250
IRF250
pf 4fl datasheet
SFF250
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IRF250
Abstract: SFF250C
Text: mm PRELIMINARY SFF250C SOLID STATE DEVICES, INC TCf 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 ,f «I 30 AMP 200 VOLTS 0.085 Q N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: Rugged construction with poly silicon gate
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670-SSDI
SFF250C
IRF250
O-254C
SFF250C
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IRF250
Abstract: IRF250 power MOSFET IRF250 MOSFET
Text: §M>II PRELIMINARY SFF250/61 SOLID STATE DEVICES, INC ; I ‘i 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 30 AMP 200 VOLTS 0.085 Q N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: Rugged construction with poly silicon gate
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670-SSDI
SFF250/61
IRF250
IRF250 power MOSFET
IRF250 MOSFET
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1RFP250
Abstract: IRFC250 1rfp254 IRF254 085n IRF250 2N6765 2N6766
Text: 4686226 I X Y S CORP 03 ¡j 4t.0fc.22Li □0D02Dfl □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a RDS(on) -
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IRFC250:
2N6766
2N6765
IRF250/IRFP250
IRF251/IRFP251
IRF252/IRFP252
1RF253/IRFP253
IRF254/IRFP254
IRFC250
1RFP250
IRFC250
1rfp254
IRF254
085n
IRF250
2N6765
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3849
Abstract: No abstract text available
Text: 4686226 I X Y S CORP □IXYS ^ d F J M böbS Sti Q je j- ^ u . TECHNICAL DATA SHEET August 1988 DATA SHE ET NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • • . 2 0 0 V
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IRFC250:
2N6766
2N6765
IRF250/IRFP250
IRF251/IRFP251
IRF252/IRFP252
1RF253/Ã
RFP253
IRF254/IRFP254
IRFC250
3849
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irf250 dc motor
Abstract: IRF250 ic data
Text: 4686226 I X Y S CORP 03 4t.0L.22Li □ 0 D 0 2 D f l ¡j □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a
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IRFC250:
2N6766
2N6765
IRF250/IRFP250
IRF251/IRFP251
IRF252/IRFP252
1RF253/IRFP253
IRF254/IRFP254
IRFC250
irf250 dc motor
IRF250 ic data
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