METALIZED Search Results

TH 2190 HOT Transistor

Contextual Info: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: Type 945U High Current Screw Terminal Capacitors Metallized Polypropylene Dielectric Type 945U uses advanced metalized film technology to achieve long-life, high reliability in DC link applications. High voltage and high current ratings packaged in screw-terminal cases allow for replacement of series-parallel banks of aluminum

p281

Abstract: P28-1 TRANSISTOR P281
Contextual Info: polyfet rf devices P281 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2246

Contextual Info: polyfet rf devices F2246 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

PRF134

Contextual Info: polyfet rf devices PRF134 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,

F2211

Contextual Info: polyfet rf devices F2211 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

J593

Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
Contextual Info: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

AGERE

Abstract: AGR21045F AGR21045U AGR26045E AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A
Contextual Info: Preliminary Product Brief April 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications

F2248

Contextual Info: polyfet rf devices F2248 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

PRF136

Contextual Info: polyfet rf devices PRF136 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,

AGR21060EF

Abstract: AGERE AGR21060E AGR21060EU JESD22-C101A JESD22-A114B
Contextual Info: Preliminary Product Brief November 2003 AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide

8000* kss crystal

Abstract: FXO-37F FXO-37FL crystal oscillator 100mhz
Contextual Info: Crystal Oscillator FXO-37F Miniature Clock Crystal Oscillator •Features ¡It is a compact and thin ceramic package with a metalized lead for surface mounting that is able to be automatically loaded. ¡Reflow soldering is possible. ¡CMOS, TTL IC direct drive is possible. Depending upon the frequency band, there

2A100V

Contextual Info: Metalized Polyester FILM CAPACITORS Part Number Construction MMT 225 Type1 Capacity2 1. 2. 2G Capacitance C ha n ge vs. Temperature Performance Curves T WVDC4 Tolerance 3 -4 0 20 40 Tem perature °C O F Vs. Temperature Type: MMT Capacity: The first two digits are significant,

Contextual Info: Polyester and Metalized Polyester FILM CAPACITORS x The Arco Film Series consists of 4 major families: 1 2 3 Axial wrap & fill metalized polyester film capac­ itors - round MMT , and flattened or compressed (MMF) configurations. These non-inductive capac­

Sprague 730P

Contextual Info: Type 730P VISHAY Vishay Sprague Film C apacitors High Frequency, Wrap-and-Fill, Metalized Polypropylene FEATURES • Excellent AC performance • Low power dissipation • Low dielectric absorption • Close tolerance • High stability PERFORMANCE CHARACTERISTICS

100-kvar

Abstract: 150kvar
Contextual Info: High Voltage Power Capacitor-SH Type This product is a High Voltage Power SH capacitor with a safety device built-in. For High Voltage Power SH capacitor use polyp ropylene film which has excellent insulation ability as dielectric and metalized film which has self healing ability over special paper w hich has excellent

Contextual Info: Package Outline 6-Lead DFN Package Outline K6 3.00x3.00mm body, 1.00mm height (max), 0.95mm pitch (punched type) e D 6 6 b L1 b2 E E2 E4 Note 1 (Index Area D/2 x E/2) Exposed Metalized Feature 1 Note 1 (Index Area D/2 x E/2) 1 L2 View B D2 Top View Bottom View

ASTM F1249

Abstract: ASTM D2103 EIA-583 F1249 F-1249 MIL-D-3464 JEDEC J-STD-033b F1249-90 ESD S11.11 MIL-D-3464 1 unit size
Contextual Info: TECHNICAL BULLETIN TB-2031 Statshield Moisture Barrier Bags Application Instructions Made in the United States of America Construction Desco’s Statshield® Moisture Barrier Bags manufactured from a static dissipative metalized laminated film. The metal layer of the Desco’s

6nc2

Abstract: 6nc3 3.6864
Contextual Info: Crystal OSCILLATOR Series 6N, SEAM SEALED CERAMIC 7.0 X 5MM Surface Mount Package FEATURE z z z z z z Broad frequency range from 1.54Mhz to 125MHz Compact and thin ceramic package with metalized surface mounting and automatically loaded Reflow solder is possible

Contextual Info: TkJaRJSSS Crystal Oscillator KSS VC-FXO-35F ^ /JvJF^ EES,J ^97K M ^ii§5/'V oltage Controlled SMD Crystal Oscillator • ^ H /F e a tu r e s ■ • t 7 S 7 * r - V • * $ 7 -f X U - @ K W/ J ' J K • ? to • It is a compact and thin ceramic package with a metalized lead

Contextual Info: TKSI^Ss S Crystal Oscillator VC-FXO-35F Controlled S M D C ry sta l O scillator • ^ J ^ / F e a t ure • -tz 7 $ "j 9 — x/\° "J ■> r — v •/■ 1? 7 -f X 'J — g • u •5f| Jf2T* T-r o ya-^m nut^m x'to • It is a compact and thin ceramic package with a metalized lead for

P123

Contextual Info: polyfet rf devices P123 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: M2R-25-4-1-TL Optical Gigabit Ethernet/Fibre Channel 850nm SFF 2x5 Dual Receivers - 1.25/1.0625GBaud - +3.3V  Features ! 1.25 Gbps Gigabit Ethernet Compliant ! Metalized Plastic Package ! TTL Signal Detect output ! AC coupled PECL level outputs ! Low profile fits Mezzanine Card Applications

M2T-25

Contextual Info:  M2T-25-9-2-L Optical 1310nm SFF LC 2x5 Dual Transmitter Module - 8 to 1500MBaud - +3.3V PR EL IM IN AR Y Features ! 8Mbps to 1.5Gbps performance ! Metalized Plastic Package ! Transmitter Disable Input ! Low profile fits Mezzanine Card Applications ! 150Ω differential AC coupled PECL level Inputs