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    AGR21030EU Search Results

    AGR21030EU Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR21030EU Agere Systems FET, 90W, 2.110GHz-2.17GHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGR21030EU Datasheets Context Search

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    J593

    Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
    Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original
    PDF AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief April 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original
    PDF AGR21030E AGR21030EU AGR21030EF PB03-095RFPP PB03-070RFPP)

    J605

    Abstract: No abstract text available
    Text: Preliminary Data Sheet December 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original
    PDF AGR21030E AGR21030EU AGR21030EF Powe10-12, DS04-065RFPP J605

    2.4 ghz mosfet

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original
    PDF AGR21030E AGR21030EU AGR21030EF Juncti10-12, DS04-036RFPP 2.4 ghz mosfet

    AGR21030E

    Abstract: AGR21030EF AGR21030EU JESD22-C101A
    Text: Preliminary Data Sheet May 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original
    PDF AGR21030E AGR21030E AGR21030EU AGR21030EF performance-12, DS04-200RFPP DS04-163RFPP) AGR21030EF AGR21030EU JESD22-C101A

    AGR21030E

    Abstract: AGR21030EF AGR21030EU JESD22-A114
    Text: Preliminary Data Sheet May 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original
    PDF AGR21030E AGR21030E AGR21030EU AGR21030EF carr10-712-4106) DS02-277RFPP AGR21030EF AGR21030EU JESD22-A114