AGR21030EF
Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A
Text: AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21030EF
AGR21030EF
1030EF
AGR21030XF
21045F
12-digit
2.4 ghz mosfet
AGR21030XF
JESD22-C101A
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AGR21030EF
Abstract: AGR21030XF JESD22-C101A J622
Text: Preliminary Data Sheet June 2004 AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030EF
AGR21030EF
DS04-225RFPP
DS04-200RFPP)
AGR21030XF
JESD22-C101A
J622
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RF POWER MOSFET
Abstract: J605 amphenol 24- 28 pf
Text: Preliminary Data Sheet June 2004 AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030EF
RF POWER MOSFET
J605
amphenol 24- 28 pf
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J593
Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030E
AGR21030E
AGR21030EU
AGR21030EF
DS04-163RFPP
DS04-065RFPP)
J593
AGR21030EF
AGR21030EU
JESD22-C101A
J157
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Brief April 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030E
AGR21030EU
AGR21030EF
PB03-095RFPP
PB03-070RFPP)
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AGRA10EM
Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station
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CA03-005RFPP-7
CA03-005RFPP-6)
AGRA10EM
APP550
APP550TM
AGR09085EF
APP550TM and APP530TM
400-kHz
agra 30
TAAD08JU2
AGR09030EF
AGR09030GUM
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J605
Abstract: No abstract text available
Text: Preliminary Data Sheet December 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030E
AGR21030EU
AGR21030EF
Powe10-12,
DS04-065RFPP
J605
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2.4 ghz mosfet
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030E
AGR21030EU
AGR21030EF
Juncti10-12,
DS04-036RFPP
2.4 ghz mosfet
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AGR21030E
Abstract: AGR21030EF AGR21030EU JESD22-C101A
Text: Preliminary Data Sheet May 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030E
AGR21030E
AGR21030EU
AGR21030EF
performance-12,
DS04-200RFPP
DS04-163RFPP)
AGR21030EF
AGR21030EU
JESD22-C101A
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AGR21030E
Abstract: AGR21030EF AGR21030EU JESD22-A114
Text: Preliminary Data Sheet May 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030E
AGR21030E
AGR21030EU
AGR21030EF
carr10-712-4106)
DS02-277RFPP
AGR21030EF
AGR21030EU
JESD22-A114
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