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Advanced Semiconductor Inc AGR21060EF RF MOSFET Transistors 2.11-2.17GHz13.5Watt Gain 14.5dB
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AGR21060EF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR21060EF		Agere Systems	FET, 60W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR21060EF		Agere Systems	60 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF

AGR21060EF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AGR21060EF Abstract: AGERE AGR21060E AGR21060EU JESD22-C101A JESD22-A114B Text: Preliminary Product Brief November 2003 AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide	Original	PDF	AGR21060E AGR21060E AGR21060EU AGR21060EF PB04-015RFPP PB03-096RFPP) AGR21060EF AGERE AGR21060EU JESD22-C101A JESD22-A114B
AGR21060EF Abstract: 100B8R2JCA500X CDM 07 C14A JESD22-C101A R210 AGR21060E AGR21060EU C15B material sheet C15A Text: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	PDF	AGR21060E AGR21060E AGR21060EU AGR21060EF AGR21060EF 100B8R2JCA500X CDM 07 C14A JESD22-C101A R210 AGR21060EU C15B material sheet C15A
ti c11b Abstract: No abstract text available Text: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	PDF	AGR21060E AGR21060EU AGR21060EF ti c11b
AGR21060EF Abstract: AGR21060E AGR21060EU JESD22-A114 Text: Preliminary Product Brief April 2003 AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless	Original	PDF	AGR21060E AGR21060E AGR21060EU AGR21060EF PB03-096RFPP PB03-071RFPP) AGR21060EF AGR21060EU JESD22-A114
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM