IEC-297-3
Abstract: colour coding mazak ral VERO ELECTRONICS pk 55 29-1251h 10020B vero pk 100 173-202287K alocrom 1200 vero pk-100 AlMgSi0,5
Text: SUBRACK SECTION INDEX A GUIDE TO THE EMC SCREENING OF SUBRACKS . PAGE 4.02 CUSTOMISING OPTIONS . 4.03 II SUBRACK SYSTEMS KM6-I Dimensional Criteria . 4.04-4.07 Toolkit CAD Package . 4.08
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM6 1 6 4 0 0 0 A CMOS SRAM ELECTRONICS 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 urn CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V +/-10% Low Data Retention Voltage : 2V Min
|
OCR Scan
|
256Kx16
256Kx16
44-TSOP
KM6164000A
|
PDF
|
alocrom 1200
Abstract: 173-202287K alocrom BS 1470 NS4 material data sheet Almg3 953-236506A Almg3 5251-H24 173-253258D 173-232669L
Text: P A N E L S KM6-II subracks: Front panels To meet the needs of subrack users, we offer a wide range of product conforming to IEC 60297-3 DIN 41494. Versatility is increased by the provision of separate card mounting devices, chosen to suit the user's needs.
|
Original
|
957-236340K
957-236341H
957-236386H
957-236387F
957-236388D
957-236389B
957-236390F
957-236391D
957-236393L
957-236394J
alocrom 1200
173-202287K
alocrom
BS 1470 NS4
material data sheet Almg3
953-236506A
Almg3
5251-H24
173-253258D
173-232669L
|
PDF
|
DIN 41612 connector
Abstract: APW power supply conductive strip 34247 60HP 84HP 42HP din 41612 a c e DIN 41612 Type M POWER
Text: APW Electronic Solutions KM6-II Subrack Accessories TAPPED STRIPS Tapped M2,5 on a pitch of 1HP, these strips are used for securing front panels, backplanes, or as an option for chassis plates. As an alternative to tapped strips, a slide nut suitable for use in front
|
Original
|
UL94VO
DIN 41612 connector
APW power supply
conductive strip
34247
60HP
84HP
42HP
din 41612 a c e
DIN 41612 Type M POWER
|
PDF
|
KM6 II
Abstract: KM68U4000A
Text: KM6 1 6 U 4 0 0 0 A CMOS SRAM ELECTRONICS 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 256Kx16 • Power Supply Voltage KM68V4000A Family : 3.3 +/- 0.3V KM68U4000A Family : 3.0 +/- 0.3V
|
OCR Scan
|
256Kx16
256Kx16
KM68V4000A
KM68U4000A
44-TSOP
KM616V4000A
KM616U4000A
BBBBBBBB0B0B0B00B0B0B0
KM616U4000A
KM6 II
|
PDF
|
dg312
Abstract: No abstract text available
Text: KM6 8 FV 1OOO CMOS SRAM ELECTRONICS 128Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FV1000, KM68FS1000 and KM68FR1000 • Organization : 128K x 8 family are fabricated by SAMSUNG'S advanced Full
|
OCR Scan
|
128Kx8
KM68FV1000
KM68FS1000
KM68FR1000
32-SOP,
32-TSOP
32-STSOP
KM68FV1000,
dg312
|
PDF
|
KM6 II
Abstract: No abstract text available
Text: I KM 6 8 V 1 0 0 2 B/ BL , KM6 8 V1 0 0 2 B l / B LI CM OS SRAM D o c u m e n t Title 128Kx8 B i t High Speed Static RAM 3.3V Operat ing , R e v o l u t i o n a r y Pin out. Operat ed at C o mm e r c i a l and I nd us tr ia l T e m p er a t u r e Range. Revision History
|
OCR Scan
|
128Kx8
32-SO
J-400
32-TSOP2-400F
KM6 II
|
PDF
|
KM6 II
Abstract: No abstract text available
Text: KM6 8 V 1 00 2 A , K M 6 8 V 1 0 0 2 A I CMOS SRAM D o c u m e n t TitBa 1 2 8 K x 8 Hi gh S p e e d St at i c R A M 3 . 3 V O p e r a t i n g , R e v o l u t i o n a r y Pin out. O p e r a t e d a t C o m m e r c i a l a nd I n d u s t r ia l T e m p e r a t u r e R a n g e .
|
OCR Scan
|
12/15/17/20ns
KM6 II
|
PDF
|
KM6 II
Abstract: SRAM sheet samsung KM616
Text: KM 6 1 6 4 0 0 0 A ei cm ELECTRONICS CMOS SRAM 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6164000A family is fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating
|
OCR Scan
|
256Kx16
256Kx16
44-TSOP
KM6164000A
KM6164000A
KM6 II
SRAM sheet samsung
KM616
|
PDF
|
G9SX-BC202
Abstract: T11T12 T21T22 transistor s34 automatic 3 phase changer block diagram of plc s7 KM6 II preset switch G9SX-BC202-RT 6 channel relay to control robot plc wiring diagram s7 200
Text: Flexible Safety Unit G9SX Logical AND Function Adds Flexibility to I/O Expansion • Facilitates partial or complete control system setup. • Solid-state outputs excluding Expansion Units . • Detailed LED indications enable easy diagnosis. • TÜV Product Service certification for compliance
|
Original
|
IEC/EN61508
EN954-1
J150-E1-04
75-344-7093/Fax:
G9SX-BC202
T11T12 T21T22
transistor s34
automatic 3 phase changer
block diagram of plc s7
KM6 II
preset switch
G9SX-BC202-RT
6 channel relay to control robot
plc wiring diagram s7 200
|
PDF
|
G9SX-BC202
Abstract: AD322 g9sx-bc basic wiring diagram contactor EX Emergency Stop Drawing G9SX-AD322-T15 4 pin terminal block connector BC202 EN61508 D40A
Text: Flexible Safety Unit G9SX CSM_G9SX_DS_E_5_1 Logical AND Function Adds Flexibility to I/O Expansion • Facilitates partial or complete control system setup. • Solid-state outputs excluding Expansion Units . • Detailed LED indications enable easy diagnosis.
|
Original
|
IEC/EN61508
EN954-1
ISO13849-1
G9SX-BC202
AD322
g9sx-bc
basic wiring diagram contactor
EX Emergency Stop Drawing
G9SX-AD322-T15
4 pin terminal block connector
BC202
EN61508
D40A
|
PDF
|
light following robot diagram
Abstract: g9sx-BC202 IEC/EN 60947-5-1 IEC 60947-5-1 limit switch KM A1 EN60204-1 welding machine wiring diagram PFP-M EN61508 mos fet marking k1 circuit diagram of door lock system
Text: Flexible Safety Unit G9SX Logical AND Function in combination with clever I/O Expansion and Diagnosis offers Flexibility, Transparency and Availability • Facilitates clear and transparent segmentation of your safety system • Solid-state outputs for long live, and relay expansion
|
Original
|
EN954-1
IEC/EN61508
J150-E2-01
NL-2132
light following robot diagram
g9sx-BC202
IEC/EN 60947-5-1
IEC 60947-5-1 limit switch KM A1
EN60204-1
welding machine wiring diagram
PFP-M
EN61508
mos fet marking k1
circuit diagram of door lock system
|
PDF
|
welding machine wiring diagram
Abstract: g9sx-BC202 hot air gun fan controller circuit G9SX-AD322-T15 g9sx-bc 24vdc motor forward reverse control diagram s34 zener diode varistor S14 k1 circuit diagram of door interlock system en61558
Text: Flexible Safety Unit G9SX Logical AND Function Adds Flexibility to I/O Expansion • Facilitates partial or complete control system setup. ■ Solid-state outputs excluding Expansion Units . ■ Detailed LED indications enable easy diagnosis. ■ TÜV Product Service certification for compliance
|
Original
|
IEC/EN61508
EN954-1
welding machine wiring diagram
g9sx-BC202
hot air gun fan controller circuit
G9SX-AD322-T15
g9sx-bc
24vdc motor forward reverse control diagram
s34 zener diode
varistor S14 k1
circuit diagram of door interlock system
en61558
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM6161002 CMOS SRAM ELECTR O NICS 6 4 K x 1 6 B H High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002-15 : 230 mA(Max.)
|
OCR Scan
|
KM6161002
KM6161002-15
KM6161002-17
KM6161002-20
KM6161002
576-bit
|
PDF
|
|
LC7265
Abstract: 200N1 BJ16 9vdd LCT265
Text: LCT265 1C7笳 五 位数 字频率 显 示器 外形 图 简要说 明 Km“ /Ⅱ”甾 频率显示器 可 以显示 FM MW/ LW波 段的接收频率 ,并 能选择多种中频率 FM:8种 、 MW/LW:3种 该器件有消隐和显示保持功能 ,工 作
|
Original
|
LCT265
300mW
l/1000
1t99m
LC7265
200N1
BJ16
9vdd
LCT265
|
PDF
|
welding machine wiring diagram
Abstract: din en iso 13855 G9SX-GS226-T15-RC welding machine wiring diagram manual T71-T72 G9SX-GS226-T15-RT G9SX-BC202 welding machine transformer wiring diagram G9SX-GS226-T15 automatic brake failure indicator
Text: Safety Guard Switching Unit G9SX-GS CSM_G9SX-GS_DS_E_6_1 A Safety Measure for Hazardous Operations That Does Not Lower Productivity • Two functions support two types of application: • Auto switching: For applications where operators work together with machines
|
Original
|
|
PDF
|
MG20A-P-13B Flexible Super Gland
Abstract: MG20A A4EG-C000041 g9sx-BC202 EMERGENCY OFF PUSH BUTTON touch switch pushbutton DC-13 E76675 EN60947-5-1 semi catalog
Text: Enabling Grip Switch A4EG CSM_A4EG_DS_E_5_1 Enabling Grip Switch with Distinct Feel for Three Easily Discernible Positions • The difficult task of configuring safety circuits is now easily achieved by combining the A4EG with the G9SX-GS. • In addition to the standard models, the lineup also includes
|
Original
|
|
PDF
|
KM684000BLP-71
Abstract: KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L
Text: KM684000B Family CMOS SRAM S12Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • . The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family supports various operating temperature ranges and various package
|
OCR Scan
|
KM684000B
S12Kx8
32-DIP-600
32-SOP-52S,
32-TSOP2-400F/R
KM684000BL
KM684000BL-L
KM684000BLI
KM684000BLP-71
KM684000BLG-5L
KM6840006LP-5
A13Q
KM684000BLG-7L
km684000blt
KM684000BLP5L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM616B4002 BiCMOS SRAM 256Kx 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns Max. • Law Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 3QmA(Max.) Operating KM 816B4002-12 : 270mA(Max ) KM616B4002 -1 3 : 265mA(Max.)
|
OCR Scan
|
KM616B4002
256Kx
816B4002-12
270mA
KM616B4002
265mA
260mA
KM616B4002J
44-SOJ-4QO
|
PDF
|
KM684000
Abstract: km684000-7 KM68512
Text: CMOS SRAM KM684000/L/L-L 524, 288 WORD X 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55, 70, 8 5 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 2.57mW(Max) 550,uW(Max.) L-Version 110/<W(Max.) L-L-Version Operating
|
OCR Scan
|
KM684000/L/L-L
100ns
550/j
385mW/MHz
KM684000LP/LP-L
32-DIP-600
KM684000G/LG/LG-L
32-SOP-525
KM684000T/LT/LT-L
32-TSOP2-400F
KM684000
km684000-7
KM68512
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM681000AL/KM681000AL-L CMOS SRAM 128KX8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access T im * 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10pW (typ.) L-Version 5|iW (typ.) LL-Version Operating : 35mW (typ.) • Single S V ±10 % Power Supply
|
OCR Scan
|
KM681000AL/KM681000AL-L
128KX8
KMG81000ALP/ALP-L:
600mil)
KM681000ALG/ALG-L:
525mil)
KM681000ALT/ALT-L
KM681000ALR/ALR-L:
000AUAL-L
576-bit
|
PDF
|
KM68V4000
Abstract: No abstract text available
Text: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 um CMOS Organization : 512K x 8 Power Supply Voltage : 3.3 +/- 0.3V * Low Data Retention Voltage : 2V Min
|
OCR Scan
|
KM68V4000A
512Kx8
32-SOP,
32-TSOP
KM68V4000A
KM68V4000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Prelimianry CMOS SRAM KM684000AL / AL-L 512Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns Max. • Low power dissipation - Standby(CMOS) : 550nW (Max.) L Version : 110|iW(Max.) L-L Version - Operating : 385mW /MHz(Max.)
|
OCR Scan
|
KM684000AL
512Kx8
550nW
385mW
684000ALP/ALP-L
600mil)
KM684000ALG/ALG-L
525mii)
KM684000ALT/ALT-L
684000ALR/ALR-L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Remark Rev. 0.0 - 1′st edition - Package Dimension Finalized Feb. 4′th, 1997 Preliminary
|
Original
|
KM68V4000BZ,
KM68U4000BZ
512Kx8
48-CSP
55/Typ.
|
PDF
|