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Samsung Semiconductor KM684000CLG-5L
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Bristol Electronics	KM684000CLG-5L		87			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SEC KM684000CLG-7L
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Samsung Semiconductor KM684000ALG-7
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Quest Components	KM684000ALG-7		617			1 $17.5995 10 $17.5995 100 $17.5995 1000 $11.733 10000 $11.733	Buy Now
	KM684000ALG-7		24			1 $17.1045 10 $15.204 100 $14.0637 1000 $14.0637 10000 $14.0637	Buy Now
	KM684000ALG-7		17			1 $17.1045 10 $15.204 100 $14.0637 1000 $14.0637 10000 $14.0637	Buy Now
Samsung Semiconductor KM684000BLG-7L
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Bristol Electronics	KM684000BLG-7L		13			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	KM684000BLG-7L		12			1 $13.506 10 $9.004 100 $9.004 1000 $9.004 10000 $9.004	Buy Now
Samsung Semiconductor KM684000BLP-7
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Bristol Electronics	KM684000BLP-7		9			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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KM684000 Datasheets (170)

Part	Manufacturer	Description	Datasheet Type	PDF
KM684000	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
KM684000	Samsung Electronics	524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM	Scan	PDF
KM684000	Samsung Electronics	524288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM	Scan	PDF
KM684000A	Samsung Electronics	512K BY 8-BIT HIGH SPEED CMOS STATIC RAM	Scan	PDF
KM684000AL	Samsung Electronics	512K x8 bit Low Power CMOS Static RAM	Original	PDF
KM684000ALG	Samsung Electronics	KM684000ALG 512K x 8 Bit Low Power CMOS Static RAM, Organization = 512K x 8, Vcc(V) = 4.5~5.5, Speed-tAA(ns) = 55,70, Operating Temperature = C,i, Operating Current(mA) = 90, Standby Current(uA) = 100/20, Package = 32DIP,32SOP,32TSOP2	Original	PDF
KM684000ALG-5	Samsung Electronics	512K x8 bit Low Power CMOS Static RAM	Original	PDF
KM684000ALG-5	Samsung Electronics	128K x 8 bit Low Power CMOS Static RAM	Original	PDF
KM684000ALG-5L	Samsung Electronics	55ns, 512K x 8 bit low low power CMOS static RAM	Original	PDF
KM684000ALG-5L	Samsung Electronics	512K x8 bit Low Power CMOS Static RAM	Original	PDF
KM684000ALG-7	Samsung Electronics	70ns, 512K x 8 bit low power CMOS static RAM	Original	PDF
KM684000ALG-7	Samsung Electronics	512K x8 bit Low Power CMOS Static RAM	Original	PDF
KM684000ALG-7L	Samsung Electronics	512K x8 bit Low Power CMOS Static RAM	Original	PDF
KM684000ALG-7L	Samsung Electronics	70ns, 512K x 8 bit low low power CMOS static RAM	Original	PDF

KM684000ALGI-7	Samsung Electronics	512K x8 bit Low Power CMOS Static RAM	Original	PDF
KM684000ALGI-7	Samsung Electronics	70ns, 512K x 8 bit low power CMOS static RAM	Original	PDF
KM684000ALGI-7L	Samsung Electronics	512K x8 bit Low Power CMOS Static RAM	Original	PDF
KM684000ALGI-7L	Samsung Electronics	128K x 8 bit Low Power CMOS Static RAM	Original	PDF
KM684000ALI	Samsung Electronics	512K x8 bit Low Power CMOS Static RAM	Original	PDF
KM684000ALI-L	Samsung Electronics	512K x8 bit Low Power CMOS Static RAM	Original	PDF

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KM684000 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
KM6 II Abstract: KM684000ALP-7 KM684000A KM684000AL KM684000ALI KM684000ALI-L KM684000AL-L KM684000ALP-5 KM684000ALGI-7L A2ND Text: PRELIMINARY CMOS SRAM KM684000A Family 512Kx8 bit Low Power CMOS Static RAM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION Process Technology : 0.4§- CMOS Organization : 512Kx8 Power Supply Voltage : Single 5V ¡¾ 10% Low Data Retention Voltage : 2V Min	Original	PDF	KM684000A 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 047MAX 002MIN KM6 II KM684000ALP-7 KM684000AL KM684000ALI KM684000ALI-L KM684000AL-L KM684000ALP-5 KM684000ALGI-7L A2ND
Untitled Abstract: No abstract text available Text: KM684000BLR-7L IL08 4 M 524,288 x 8 -BIT SRAM —TOP VIEW— A15 IN 31 2 A16 IN A17 IN 30 3 A14 IN WE IN 29 4 A12 IN A13 IN 28 5 A7 IN A8 IN 27 6 A6 IN A9 IN 26 7 A5 IN A11 IN 25 8 A4 IN OE IN 24 9 A3 IN A10 IN 23 10 A2 IN CS IN 22 11 A1 IN I/O8 IN 21 12 A0 IN	Original	PDF	KM684000BLR-7L
TSOP 173 g Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L Text: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8	OCR Scan	PDF	KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP 71b4142 DD23bST TSOP 173 g KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000AL KM684000ALI KM684000ALI-L
KM684000BLP-7 Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L Text: Prem iìinary CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types	OCR Scan	PDF	KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 003bS17 KM684000BLP-7 KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
Untitled Abstract: No abstract text available Text: KM684000A Family_ CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.4 * CMOS •• Organization : 512Kx8 •■ Power Supply Voltage : Single 5V •• 10% ■ Low Data Retention Voltage : 2V Min	OCR Scan	PDF	KM684000A 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 47MAX
Untitled Abstract: No abstract text available Text: PRELIMINARY KM684000L/KM684000L-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10/iW (Typ.) L Version 5 fiW (Typ.) L-L Version Operating: 110mW/MHz (Max.)	OCR Scan	PDF	KM684000L/KM684000L-L 100ns 10/iW 110mW/MHz KM684000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil)
Untitled Abstract: No abstract text available Text: Prelimiariry CMOS SRAM KM684000ALI / ALI-L 512Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial tem perature operating : - 40°C ~ 85°C • Fast Access Time : 70,100ns Max. • Low power dissipation - Standby(CMOS) : 550uW (Max.) L Version	OCR Scan	PDF	KM684000ALI 512Kx8 100ns 550uW 275nW 385mW KM684000ALGI/ALGI-L: 525mil) KM684000ALTI/ALTI-L 400mil)
Untitled Abstract: No abstract text available Text: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8	OCR Scan	PDF	KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP D23bSfl 7TL4142 0G23bSc
Untitled Abstract: No abstract text available Text: Prelimianry CMOS SRAM KM684000AL / AL-L 512Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns Max. • Low power dissipation - Standby(CMOS) : 550nW (Max.) L Version : 110\|iW(Max.) L-L Version - Operating : 385mW /MHz(Max.)	OCR Scan	PDF	KM684000AL 512Kx8 550nW 385mW 684000ALP/ALP-L 600mil) KM684000ALG/ALG-L 525mii) KM684000ALT/ALT-L 684000ALR/ALR-L
Untitled Abstract: No abstract text available Text: KM684000L/KM684000L-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10/iW (Typ.) L Version 5fiW (Typ.) L-L Version Operating: 110mW/MHz (Max.)	OCR Scan	PDF	KM684000L/KM684000L-L 100ns 10/iW 110mW/MHz KM684000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil)
Untitled Abstract: No abstract text available Text: CMOS SRAM KM684000C Family 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0.0 Initial draft O ctober 20,1998 Prelim inary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and	OCR Scan	PDF	KM684000C 512Kx8 32-DIP 004MAX1
Untitled Abstract: No abstract text available Text: KM684000UKM684000L-L CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10(iW (Typ.) L Version 5/iW ITyp.) L-L Version Operating: 110mW /MHz (Max.)	OCR Scan	PDF	KM684000UKM684000L-L 100ns 110mW KM6B4000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil) KM684000LT/LT-L:
Untitled Abstract: No abstract text available Text: KM684000LI/LI-L CMOS SRAM 524,288K WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,85,100ns Max. • Low Power Dissipation Standby (CMOS) : 11mW(Typ-) 1.1/iW(Typ.) L-Version 275« WfTyp.) LL-Version Operating	OCR Scan	PDF	KM684000LI/LI-L 100ns KM684000LGI/LGI-L 32-SOP-525 KM684000LTI/LTI-L 32-TSOP2-400F KM684000LRI/LRI-L 32-TSQP2-400R KM684000 304-bit
pin diagram of ttl 74112 Abstract: pin diagram of 74112 ttl 74112 CI 74112 L0821 L0619 bm42 Text: SAMSUNG ELECTRONICS INC b?E » 7 c1 b M m 2 KM684000L/KM684000L-L 00175m MSI SriGK CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 55, 70, 85, 100ns Max. • Low P ow er D issipa tion Standby (CMOS): 1(VW (Typ.) L Version	OCR Scan	PDF	KM684000L/KM684000L-L 00175m 100ns 110mW/MHz KM684000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil) pin diagram of ttl 74112 pin diagram of 74112 ttl 74112 CI 74112 L0821 L0619 bm42

Untitled Abstract: No abstract text available Text: KM684000B Family CMOS SRAM Document Tills 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft D ecem ber 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write : 35m A -> 45m A	OCR Scan	PDF	KM684000B 512Kx8 10/45mA 10OpF
Untitled Abstract: No abstract text available Text: KM684000B Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft D ecem ber 7th 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write; 35m A -> 45mA	OCR Scan	PDF	KM684000B 512Kx8 15/35mA 10/45mA 10OpF
Untitled Abstract: No abstract text available Text: KM684000LI/LI-L CMOS SRAM 524,288K WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,85,100ns Max. • Low Power Dissipation Standby (CMOS) :11mWfTyp.) 1.1,«W(Typ.) L-Version 275,uW(Typ.) LL-Version Operating	OCR Scan	PDF	KM684000LI/LI 100ns 11mWfTyp. 275ftWfTyp. KM684000LGI/LGI-L KM684000LTI/LTI-L KM684000LRI/LRI-L 32-SOP-525 32-TSOP2-400F 32-TSOP2-400R
Untitled Abstract: No abstract text available Text: KM684000A Family CMOS SRAM 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible	OCR Scan	PDF	KM684000A 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP KM684000AL KM684000AL-L KM6840
Untitled Abstract: No abstract text available Text: Preliminary CMOS SRAM KM684000C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision Hestorv Revision No. 0.0 History Draft Date Remark Initial d ra ft O c to b e r 2 0 ,1 9 9 8 P re lim in a ry The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and	OCR Scan	PDF	KM684000C 512Kx8 512KxQ
KM684000ALG-7 Abstract: KM684000ALP-7L KM684000A KM684000AL KM684000ALI KM684000AL-L Text: j j £ w K M 684000A C M O S SR A M C l C1* ELECTRONICS 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology 0 4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S • • • • advanced CMOS process technology. The family	OCR Scan	PDF	KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP KM684000A KM684000A) KM684000ALG-7 KM684000ALP-7L KM684000AL KM684000ALI KM684000AL-L
km684000blp-7l Abstract: km684000blp Text: Prem ilinary KM684000B Family CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types	OCR Scan	PDF	KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP km684000blp-7l km684000blp
KM684000ALI Abstract: No abstract text available Text: Prelîmianry KM684000ALI / ALI-L CMOS SRAM 512Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial tem perature operating : - 4 0 °C - 8 5°C • Fast Access Tim e : 70,100ns M ax. • Low power dissipation	OCR Scan	PDF	KM684000ALI 512Kx8 100ns 550uW 275nW 385mW KM684000ALGI/ALGI-L: 525mil) KM684000ALTI/ALTI-L 400mil)
lem HA Abstract: KM684000AL Text: Prelimianry KM684000AL / AL-L CMOS SRAM 512Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns Max. • Low power dissipation - Standby(CMOS) : 550>iW(Max.) L Version : 110\|iW(Max.) L-L Version - Operating : 385mW/MHz(Max.)	OCR Scan	PDF	KM684000AL 512Kx8 385mVWMHz KM684000ALP/ALP-L 600mil) KM684000ALG/ALG-L 525mil) KM684000ALT/ALT-L KM684000ALR/ALR-L KM684000AL/AL-L lem HA
KM684000BLP-71 Abstract: KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L Text: KM684000B Family CMOS SRAM S12Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • . The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family supports various operating temperature ranges and various package	OCR Scan	PDF	KM684000B S12Kx8 32-DIP-600 32-SOP-52S, 32-TSOP2-400F/R KM684000BL KM684000BL-L KM684000BLI KM684000BLP-71 KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L

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Samsung Semiconductor KM684000CLG-5L

SEC KM684000CLG-7L

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KM684000 Datasheets (170)

KM684000 Datasheets Context Search

KM6 II

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TSOP 173 g

KM684000BLP-7

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pin diagram of ttl 74112

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KM684000ALG-7

km684000blp-7l

KM684000ALI

lem HA

KM684000BLP-71