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Infineon Technologies AG IPD200N15N3GATMA1 MOSFET N-CH 150V 50A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD200N15N3GATMA1	Reel	40,000		2,500	1 - 10 - 100 - 1000 - 10000 $1.03875	Buy Now
Avnet Americas	IPD200N15N3GATMA1	Reel	7,500	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	IPD200N15N3GATMA1	Ammo Pack		56 Weeks, 4 Days	1	1 $2.29 10 $2.29 100 $1.56 1000 $0.936 10000 $0.936	Buy Now
Mouser Electronics	IPD200N15N3GATMA1		23,032			1 $2.2 10 $1.7 100 $1.12 1000 $1.04 10000 $1.01	Buy Now
Newark	IPD200N15N3GATMA1	Cut Tape	46		1	1 $2.29 10 $2.29 100 $1.56 1000 $0.936 10000 $0.905	Buy Now
Rochester Electronics	IPD200N15N3GATMA1		17,200		1	1 $1.15 10 $1.15 100 $1.08 1000 $0.9775 10000 $0.9775	Buy Now

TME	IPD200N15N3GATMA1				1	1 $2.3 10 $2.06 100 $1.64 1000 $1.53 10000 $1.53	Get Quote
Ameya Holding Limited	IPD200N15N3GATMA1		1,264			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	IPD200N15N3GATMA1	Cut Tape	4,975			1 $1.13 10 $1.13 100 $1.11 1000 $1.11 10000 $1.05	Buy Now
EBV Elektronik	IPD200N15N3GATMA1			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
GlobX GmbH	IPD200N15N3GATMA1		8,472			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	IPD200N15N3GATMA1		129,566			1 - 10 - 100 $1.16 1000 $0.942 10000 $0.942	Buy Now
onsemi FDBL0200N100 MOSFET N-CH 100V 300A 8HPSOF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDBL0200N100	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $3.7975	Buy Now
Avnet Americas	FDBL0200N100	Reel		22 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $3.61667	Buy Now
Mouser Electronics	FDBL0200N100		1,548			1 $7.22 10 $5.13 100 $3.9 1000 $3.8 10000 $3.79	Buy Now
Newark	FDBL0200N100	Cut Tape	2,791		1	1 $7.51 10 $5.34 100 $4.06 1000 $3.95 10000 $3.95	Buy Now
Rochester Electronics	FDBL0200N100		1		1	1 $4.22 10 $4.22 100 $3.97 1000 $3.59 10000 $3.59	Buy Now

Richardson RFPD	FDBL0200N100				2,000	1 - 10 - 100 - 1000 - 10000 $3.8	Buy Now
Avnet Asia	FDBL0200N100			22 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $3.84557	Buy Now
Avnet Silica	FDBL0200N100			23 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FDBL0200N100			24 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	FDBL0200N100		8,000			1 - 10 $5.6917 100 $3.7945 1000 $3.7945 10000 $3.7945	Buy Now
Littelfuse Inc IXTH200N10T MOSFET N-CH 100V 200A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH200N10T	Tube	1,700		1	1 $8.81 10 $8.81 100 $5.50667 1000 $4.70875 10000 $4.70875	Buy Now
Newark	IXTH200N10T	Bulk	300		1	1 $8.63 10 $8.63 100 $5.4 1000 $4.61 10000 $4.61	Buy Now
Diotec Semiconductor AG DI200N10D2 MOSFET D2PAK N 100V 200A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DI200N10D2	Bulk	625		1	1 $3.23 10 $2.104 100 $1.4803 1000 $1.1649 10000 $0.99274	Buy Now
TME	DI200N10D2		544		1	1 $1.85 10 $1.55 100 $1.29 1000 $1.03 10000 $1.03	Buy Now
Littelfuse Inc IXTK200N10L2 MOSFET N-CH 100V 200A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTK200N10L2	Tube	493		1	1 $32.54 10 $32.54 100 $23.9156 1000 $23.9156 10000 $23.9156	Buy Now
CoreStaff Co Ltd	IXTK200N10L2		350			1 $32.813 10 $27.522 100 $27.522 1000 $27.522 10000 $27.522	Buy Now
	IXTK200N10L2		140			1 $32.813 10 $27.522 100 $27.522 1000 $27.522 10000 $27.522	Buy Now
	IXTK200N10L2		100			1 $32.813 10 $27.522 100 $27.522 1000 $27.522 10000 $27.522	Buy Now

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200N1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
200N10P Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXFN 200N10P IXFK 200N10P IXFX 200N10P RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	200N10P OT-227 E153432 IXFX200N10P IXFN200N10P 200N10P IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS
200N10P Abstract: No abstract text available Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 200N10P VDSS ID25 RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25	Original	PDF	200N10P O-264 200N10P
HiPerFET Power MOSFETs Abstract: 710 115 HiperFET ds99365 Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS ID25 RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C	Original	PDF	200N10P 247TM E153432 HiPerFET Power MOSFETs 710 115 HiperFET ds99365
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET 7/16 PANEL PLUG SOLDER END 60S451-200N1 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-4, VG 95250, EN 122190, DIN 47223 Documents Panel piercing B 46 Material and plating RF_35/12.04/3.0	Original	PDF	60S451-200N1 D-84526
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET 7/16 PANEL JACK SOLDER END 60K451-200N1 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-4, VG 95250, EN 122190, DIN 47223 Documents Panel piercing B 46 Material and plating RF_35/12.04/3.0	Original	PDF	60K451-200N1 D-84526
200N10P Abstract: DIODE 630 Text: PolarHTTM Power MOSFET IXTK 200N10P VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM	Original	PDF	200N10P 200N10P DIODE 630
200N10P Abstract: ISOPLUS247 Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 133 A Ω RDS on ≤ 9 mΩ ≤ 150 ns tRR IXFR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C	Original	PDF	200N10P 03-22-06-E 200N10P ISOPLUS247
200N10P Abstract: HiperFET ISOPLUS247 Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXFR 200N10P VDSS ID25 RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C	Original	PDF	200N10P ISOPLUS247 E153432 200N10P HiperFET ISOPLUS247
Untitled Abstract: No abstract text available Text: PolarHTTM Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ IXTK 200N10P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient	Original	PDF	200N10P VDD12.
LV124 Abstract: No abstract text available Text: DATA SHEET > PFM 200N100 > 20140604 PFM 200N100 AUTOMOTIVE POWER FAIL SIMULATOR FOR OEM LV 124 AND OEM LV 148 STANDARDS FOR TESTS ACCORDING TO . > BMW GS 95024-2-1 > BMW GS 95026 > Mercedes-Benz MBN LV 124-1 > OEM LV 124 > OEM LV 148 > VW 80000 > VW 82148	Original	PDF	200N100 200N100 E48-09 LV124
200N10P Abstract: No abstract text available Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 200N10P VDSS ID25 RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25	Original	PDF	200N10P O-264 200N10P
200N10P Abstract: No abstract text available Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXTR 200N10P RDS on Electrically Isolated Tab = 100 V = 133 A Ω = 9.0 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C	Original	PDF	200N10P 247TM E153432 200N10P
Untitled Abstract: No abstract text available Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFK 200N10P IXFX 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	200N10P O-264
Untitled Abstract: No abstract text available Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFN 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	200N10P 03-22-06-E

200N1 Abstract: ISOPLUS247 200N10P TR 505 T200N Text: PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS = 100 V ID25 = 120 A Ω 8 mΩ RDS on ≤ Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ	Original	PDF	200N10P 247TM E153432 03-22-06-E 200N1 ISOPLUS247 200N10P TR 505 T200N
Untitled Abstract: No abstract text available Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFN 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	200N10P OT-227 E153432 03-22-06-E
Untitled Abstract: No abstract text available Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 133 A Ω RDS on ≤ 9 mΩ ≤ 150 ns tRR IXFR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C	Original	PDF	200N10P 03-22-06-E
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET 7/16 PANEL PLUG SOLDER END 60S451-200N1 All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-4, VG 95250, EN 122190, DIN 47223 Documents Panel piercing B 46 Material and plating RF_35/12.04/3.0	Original	PDF	60S451-200N1 D-84526
Untitled Abstract: No abstract text available Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 120 A Ω RDS on ≤ 8 mΩ IXTR 200N10P Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ	Original	PDF	200N10P 247TM E153432 03-22-06-E
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET 7/16 60K465-200N1 PANEL JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-4, VG 95250, EN 122190, DIN 47223 Documents Panel piercing B 46B Material and plating RF_35/12.04/3.0 Connector parts	Original	PDF	60K465-200N1 D-84526
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	PDF
200N15N Abstract: ipd200n15n3 IEC61249-2-21 IPP200N15N3 PG-TO220-3 Text: 200N15N3 G 200N15N3 G 200N15N3 G 200N15N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 150 V • N-channel, normal level R DS on ,max 20 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 50 A • Very low on-resistance R DS(on)	Original	PDF	IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 IEC61249-2-21 PG-TO263-3 200N15N IEC61249-2-21 PG-TO220-3
Untitled Abstract: No abstract text available Text: 200N15N3 G 200N15N3 G 200N15N3 G OptiMOS 3 Power-Transistor 200N15N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 150 V RDS(on),max 20 mW ID 50 A • Very low on-resistance R DS(on)	Original	PDF	IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 IEC61249-2-21 PG-TO263-3
VGF20 Abstract: No abstract text available Text: FUJI 2-Pack IGBT 1200 V 200 A 2MBI 200N-120 S tL a s T D S O E IGBT MODULE N series n Features • S quare RBSO A • L ow S a tu ra tion Voltage • Less Total P o w e r D issip atio n •Im p ro ve d FW D C haracteristic • M in im ize d In te rn a l S tra y Inductance	OCR Scan	PDF	/Eon125Â D-60528 VGF20

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200N1 Price and Stock

Infineon Technologies AG IPD200N15N3GATMA1

onsemi FDBL0200N100

Littelfuse Inc IXTH200N10T

Diotec Semiconductor AG DI200N10D2

Littelfuse Inc IXTK200N10L2

200N1 Datasheets Context Search

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HiPerFET Power MOSFETs

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LV124

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IXTD08N100P-1A

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VGF20