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    KM616B4002 Price and Stock

    Samsung Semiconductor KM616B4002J-12

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    Bristol Electronics KM616B4002J-12 5
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    Samsung Semiconductor KM616B4002J-15

    IC,SRAM,256KX16,BICMOS,SOJ,44PIN,PLASTIC
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    Quest Components KM616B4002J-15 5
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    KM616B4002 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616B4002 256K x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM616B4002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The KM616B4002 uses 16 com mon input and output lines and has an output enable pin w hich operates


    OCR Scan     		PDF KM616B4002 KM616B4002-12 KM616B4002-13 KM616B4002-15 KM616B4002J 44-SQJ-400 KM616B4002 304-bit i/o9-I/o16

    Untitled

    Abstract: No abstract text available
    Text: KM616B4002 BiCMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target


    OCR Scan     		PDF KM616B4002 256Kx16

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616B4002 Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 D e sig n T a rg e t


    OCR Scan     		PDF KM616B4002 256Kx16 44-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616B4002 256K x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616B4002-12 : 270 mA(Max.) KM616B4002-13:265 mA(Max.)


    OCR Scan     		PDF KM616B4002 KM616B4002-12 KM616B4002-13 KM616B4002-15 KM616B4002J 44-SQJ-400 KM616B4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM616B4002 256Kx 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 10,12,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM 616B4002J-10 : 280 mA(Max.)


    OCR Scan     		PDF KM616B4002 256Kx 616B4002J-10 KM616B4002J-12 KM616B4002J-15 KM616B4002J 44-SOJ-400 KM616B4002 304-bit KM616B400ddress.

    Untitled

    Abstract: No abstract text available
    Text: KM616B4002 BiCMOS SRAM 256K x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 3 ,1 5 ns M ax. • Low Pow er Dissipation Standby (TTL) : 6 0 m A (M ax.) T h e K M 6 1 6 B 4 0 0 2 is a 4 ,1 9 4 ,3 0 4 -b it high-speed Static


    OCR Scan     		PDF KM616B4002

    Untitled

    Abstract: No abstract text available
    Text: KM616B4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM616B4002J -12 :270 mA(Max.) KM616B4002J -13 :26 5 mA(Max.)


    OCR Scan     		PDF KM616B4002 256Kx 16Bit KM616B4002J KM616B4002J 44-SOJ-400 512x16 ber-1996

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM616B4002 BiCMOS SRAM 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM616B4002J-10: 280mA(Max.) KM616B4002J-12: 270mA(Max.)


    OCR Scan     		PDF KM616B4002 KM616B4002J-10: 280mA KM616B4002J-12: 270mA KM616B4002J-15: 260mA KM616B4002J 44-SQJ-400 KM616B4002

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM616B4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60 mA (CMOS) : 30mA Operating KM616B4002J-10 : 280mA(Max.)


    OCR Scan     		PDF KM616B4002 KM616B4002J-10 280mA KM616B4002J-12: 270mA KM616B4002J-15 260mA KM616B4002J 44-SQJ-400 KM616B4002

    KM616B4002J

    Abstract: SRAM 10ns
    Text: PRELIMINARY BiCMOS SRAM KM616B4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60 mA (CMOS) : 30mA Operating K M 616B 4002J-10: 280mA(Max.)


    OCR Scan     		PDF KM616B4002 KM616B4002J-10 280mA KM616B4002J-12 270mA KM616B4002J-15 260mA KM616B4002J 44-SQJ-400 KM616B4002 KM616B4002J SRAM 10ns

    KM616B4002

    Abstract: SRAM sheet samsung 512X16 sram
    Text: KM616B4002 BiCMOS SRAM D o cu m e n t Title 256Kx16 Bit High Speed Static RAM 5V O perating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory D raft Data R em ark R ev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.


    OCR Scan     		PDF KM616B4002 256Kx16 44-SOJ-400 028to KM616B4002 SRAM sheet samsung 512X16 sram

    Untitled

    Abstract: No abstract text available
    Text: KM616B4002 BiCMOS SRAM 256Kx 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns Max. • Law Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 3QmA(Max.) Operating KM 816B4002-12 : 270mA(Max ) KM616B4002 -1 3 : 265mA(Max.)


    OCR Scan     		PDF KM616B4002 256Kx 816B4002-12 270mA KM616B4002 265mA 260mA KM616B4002J 44-SOJ-4QO

    Untitled

    Abstract: No abstract text available
    Text: KM616B4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM616B4002J -12:270 mA(Max.) KM616B4002J -13:265 mA(Max.)


    OCR Scan     		PDF KM616B4002 16Bit KM616B4002J KM616B4002J 44-SOJ-400 KM616B4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616B4002 Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993


    OCR Scan     		PDF KM616B4002 256Kx16 44-SOJ-400

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information BiCMOS SRAM KM616BV4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175mA(Max.)


    OCR Scan     		PDF KM616BV4002 KM616BV4002J-12 175mA KM616BV4002J-15 160mA KM616BV4002J-20 155mA KM616BV4002 16-bits. 44-SO]

    KM616V4002A

    Abstract: 6161002 ER255 KM732V589
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15


    OCR Scan     		PDF KM62256C 128Kx KM68512A KM681000B KM681000C2 KM718B90 KM718BV87AT KM732V588 KM732V589/L. KM716V689 KM616V4002A 6161002 ER255 KM732V589

    SOJ 44

    Abstract: 1MX1 KM6865
    Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001


    OCR Scan     		PDF KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL SOJ 44 1MX1 KM6865

    KO10

    Abstract: No abstract text available
    Text: Advanced Information KM616BV4002 BiCMOS SRAM 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby fTTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175mA(Max.)


    OCR Scan     		PDF KM616BV4002 KM616BV4002J-12 175mA KM616BV4002J-15 160mA KM616BV4002J-20 155mA 44-SOJ-4 KM616BV4002 16-bits. KO10

    KM736V789-60

    Abstract: 512k*8 sram KM68U4000A
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -


    OCR Scan     		PDF KM622S6C KM62256D KM68S12A KM68512B KM681OOOB 32Kx8 64KX8 128KX8 KM736V789-60 512k*8 sram KM68U4000A

    KM616BV4002J-15

    Abstract: KM616BV4002 KM616BV4002J-12 KM616BV4002J-20 II06 A16-A17
    Text: Advanced Information BiCMOS SRAM KM616BV4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 1 2 ,1 5 ,20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175m A(Max.)


    OCR Scan     		PDF KM616BV4002 KM616BV4002J-12 175mA KM616BV4002J-15 160mA KM616BV4002J-20 155mA I/09-I/016 44-SOJ-400 KM616BV4002 KM616BV4002J-15 KM616BV4002J-12 KM616BV4002J-20 II06 A16-A17

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    KM616U1000BL-L

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI


    OCR Scan     		PDF KM62256CL KM62256CL-L KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L 28-TSOP 28-DIP 28-SOP KM68512CL KM616U1000BL-L

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		PDF 010/J/T KM68512 12BKX8 km6865b