16BIT Search Results

Contextual Info: TC74LCX16373AFT LOW-VOLTAGE 16-BIT D-TYPE LATCH WITH 5V TOLERANT INPUTS A N D OUTPUTS T h e TC74LCX16373AFT is a high p erform an ce C M O S 16bit D-TVPE LATCH. Designed fo r use in 3.3 V o lt systems, it achieves high speed o p e ra tio n w h ile m ain tain in g the

2A334

Abstract: 1A739
Contextual Info: IN T EG RA T ED TO SHIBA CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74LCX16646FT DATA SILICON MONOLITHIC TENTATIVE DATA LOW VOLTAGE 16-BIT BUS TRANSCEIVER I REGISTER WITH 5V TOLERANT INPUTS AND OUTPUTS The TC74LCX16646FT is a high performance CMOS 16bit

Contextual Info: Datasheet Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM 3-Wire BR93G66-3A General Description BR93G66-3A is serial EEPROM of Serial 3-Line Interface Method. They are 16bit organization and CS PIN is the first PIN in their PIN configuration. Packages W(Typ) x D(Typ)x H(Max)

K4S641633F

Contextual Info: K4S641633F-R B L/N/P CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S641633F-R(B)L/N/P CMOS SDRAM 1M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.

K4S511632D

Contextual Info: K4S511632D CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,

K4S56163LC

Contextual Info: K4S56163LC-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.4 December. 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S64163LF

Contextual Info: K4S64163LF-R B G/S CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)G/S CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S641633H-R

Contextual Info: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

BFR15

Contextual Info: K4S64163LF-R B F/R CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S561633C

Contextual Info: K4S561633C-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.

K4S561633F

Abstract: K4S561633F-X
Contextual Info: K4S561633F - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,

HY57V641620B

Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
Contextual Info: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.

K4S561632C-TC/L75

Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History

Contextual Info: K4M28163PF - R B G/F Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the

Contextual Info: K4M64163PH - R B G/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M64163PH is 67,108,864 bits synchronous high data • LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

MR27V1652D

Abstract: DIP42-P-600-2 MR27V1652DMA MR27V1652DRA
Contextual Info: ¡ Semiconductor 1A MR27V1652D 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V1652D is a 16Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8

DIP42-P-600-2

Abstract: MSM27C1602CZ
Contextual Info: O K I Semiconductor MSM27C1602CZ 1,048,576-W ord x 16-Bit or 2,097,152-W ord x 8-Bit One Time PROM D ES C R IP TIO N T h e M S M 2 7 C 1 6 0 2 C Z is a 1 6 M b it e le c tric a lly P ro g ra m m a b le R e a d -O n ly M e m o ry w h o s e c o n fig u ra tio n can be e le c tric a lly sw itch e d be tw ee n 1,0 48,57 6 w o rd x 16bit and 2 ,0 9 7 ,1 5 2 w o rd x 8

panasonic ag

Abstract: panasonic ASR panasonic fj PANASONIC Vu SERIES MN41V4260DSJ-06 MN41V4260DSJ-07 MN41V4260DTT-06 MN41V4260DTT-07 3CDT
Contextual Info: Panasonic 4M 262,144-word x 16bit Dynamic RAM 3.3V ± 0.3V 2CAS, 1WE 512Refresh Fast Page Mode P/N: MN41V4260DSJ-06 MN41V4260DSJ-07 MN41V4260DTT-06 MN41V4260DTT-07 The technical information described herein provides the typical characteristics and the application circuit of a respective product, not intended to guarantee or permit a

SOP40 prom

Abstract: 4mbit prom MSM27C402CZ
Contextual Info: O K I Semiconductor MSM27C402CZ 262,144-W ord x 16-Bit or 524,288-W ord x 8-Bit One Time PROM DES C R IP TIO N T he M S M 2 7 C 4 0 2 C Z is a 4 M b it e le c tric a lly P ro g ra m m a b le R e ad -O n ly M em o ry w h o se con figu ration can be e le ctrica lly sw itch ed betw een 26 2 ,1 4 4 w o rd x 16bit and 52 4 ,2 8 8 w o rd x 8bit. T he M S M 27C 40

Contextual Info: PcRam Description TS32MLE72V6K Dimensions The TS32MLE72V6K is a 32M bit x 72 Dynamic RAM Side Millimeters Inches high density memory module. The TS32MLE72V6K A 133.35±0.40 5.250±0.016 consists of 36pcs CMOS 16Mx4 bit DRAMs and 2pcs B 65.67000 2.585000 of 16bits driver mounted on a 168-pin printed circuit

Contextual Info: PcRam Description TS32MLE72V6Y Dimensions The TS32MLE72V6Y is a 32M bit x 72 Dynamic RAM Side Millimeters Inches high density memory module. The TS32MLE72V6Y A 133.35±0.40 5.250±0.016 consists of 36pcs CMOS 16Mx4 bit DRAMs and 2pcs B 65.67000 2.585000 of 16bits driver mounted on a 168-pin printed circuit

Contextual Info: PcRam TS16MLE72V6W Transcend Information Inc. Description The TS16MLE72V6W is a 16M bit x 72 Dynamic RAM high density memory module. The TS16MLE72V6W consists of 18pcs CMOS 8Mx8 bit DRAMs and 2pcs 16bits driver mounted on a 168-pin printed circuit board. The TS16MLE72V6W is a Dual In-Line Memory

IS42RM16160E

Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
Contextual Info: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS43LR16640A

Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted