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    K4S511632D Price and Stock

    Samsung Semiconductor K4S511632D-UC75

    IC,SDRAM,4X8MX16,CMOS,TSOP,54PIN,PLASTIC
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    Quest Components K4S511632D-UC75 206
    • 1 $25.79
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    K4S511632D-UC75 206
    • 1 $25.79
    • 10 $25.79
    • 100 $20.632
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    K4S511632D-UC75 3
    • 1 $19.656
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    K4S511632D-UC75 3
    • 1 $19.656
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    Samsung Electronics Co. Ltd K4S511632D-UC75

    (Alt: K4S511632D-UC75)
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    EBV Elektronik K4S511632D-UC75 13 Weeks 1
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    Win Source Electronics K4S511632D-UC75 9,200
    • 1 -
    • 10 $11.305
    • 100 $7.537
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    K4S511632D Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S511632D Samsung Electronics DDP 512Mbit SDRAM 8M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S511632D-KC Samsung Electronics DDP 512Mbit SDRAM 8M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S511632D-KC/L1H Samsung Electronics DDP 512Mbit SDRAM 8M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S511632D-KC/L1L Samsung Electronics DDP 512Mbit SDRAM 8M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S511632D-KC/L75 Samsung Electronics DDP 512Mbit SDRAM 8M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S511632D-KC/L7C Samsung Electronics DDP 512Mbit SDRAM 8M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF

    K4S511632D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S511632D

    Abstract: No abstract text available
    Text: K4S511632D CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		PDF K4S511632D 512Mbit 16bit K4S511632D

    K4S510832D

    Abstract: K4S510432D k4s511632d K4S511632D-UC
    Text: K4S510432D K4S510832D K4S511632D Synchronous DRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4S510432D K4S510832D K4S511632D 512Mb A10/AP k4s511632d K4S511632D-UC

    K4S641632k uc60

    Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N
    Text: General Information SDRAM SDRAM Product Guide November 2007 Memory Division November 2007 General Information SDRAM A. SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 S X X X X X X X - X X X X Speed SAMSUNG Memory Temperature & Power DRAM


    Original     		PDF 4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, 80TYP 25TYP K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    K4S511632D

    Abstract: SH7203 SH7263 0C00 EDS1216AGTA resistor SH2A K4S511632
    Text: APPLICATION NOTE SH7263/SH7203 Groups Example of BSC SDRAM Interface Connection 16-Bit Data Bus Introduction This application note describes the synchronous DRAM (SDRAM) interface of the bus state controller (BSC) and provides a practical example of connection with a data-bus width of 16 bits.


    Original     		PDF SH7263/SH7203 16-Bit SH7263/SH7203 REJ06B0760-0100/Rev K4S511632D SH7203 SH7263 0C00 EDS1216AGTA resistor SH2A K4S511632

    PC133 133Mhz cl3

    Abstract: intel date code format
    Text: PC100/PC133 µSODIMM M463S3254DK1 M463S3254DK1 SDRAM µ SODIMM 32Mx64 SDRAM µSODIMM based on 32Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S3254DK1 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100/PC133 M463S3254DK1 M463S3254DK1 32Mx64 32Mx16, 400mil 144-pin PC133 133Mhz cl3 intel date code format

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K4S511632D-UC

    Abstract: K4S510832D K4s511632D k4s511632duc K4S511632D-UL K4S5 K4S511632D-UCL K4S510832 k4s511632d-u K4S510832DUC
    Text: SDRAM 512Mb D-die x4, x8, x16 CMOS SDRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF 512Mb A10/AP K4S511632D-UC K4S510832D K4s511632D k4s511632duc K4S511632D-UL K4S5 K4S511632D-UCL K4S510832 k4s511632d-u K4S510832DUC

    LM2596-ADJ

    Abstract: NEC c157 marking code R74 SMD Transistor VR4133 K4S511632D ad1826 short stop 12v p18 30a altera midas transistor BD 222 SMD MARKING 11C5
    Text: Preliminary User’s Manual startWARE-GHS-VR4133 Starter Kit VR4133 Document No. U16916EE2V0UM00 Date Published March 2004  NEC Corporation 2004 Printed in Germany The information in this document is subject to change without notice. No part of this document may


    Original     		PDF startWARE-GHS-VR4133 VR4133 U16916EE2V0UM00 LM2596-ADJ NEC c157 marking code R74 SMD Transistor VR4133 K4S511632D ad1826 short stop 12v p18 30a altera midas transistor BD 222 SMD MARKING 11C5

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0