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    K4S641633H Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S641633H-C Samsung Electronics 1M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4S641633H-F1H Samsung Electronics 1M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4S641633H-F1L Samsung Electronics 1M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4S641633H-F75 Samsung Electronics 1M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4S641633H-G Samsung Electronics 1M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4S641633H-L Samsung Electronics 1M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4S641633H-N Samsung Electronics 1M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4S641633H-R Samsung Electronics 1M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4S641633H-RBE Samsung Electronics 1M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4S641633H-RE Samsung Electronics 1M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF

    K4S641633H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S641633H-R

    Abstract: No abstract text available
    Text: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		PDF K4S641633H 16Bit 54FBGA K4S641633H-R

    Untitled

    Abstract: No abstract text available
    Text: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		PDF K4S641633H 16Bit 54CSP

    CMOS Dynamic RAM 1M x 1

    Abstract: K4S641633H-R
    Text: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		PDF K4S641633H 16Bit 54CSP CMOS Dynamic RAM 1M x 1 K4S641633H-R

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B