54CSP Search Results

K4S641633F

Contextual Info: K4S641633F-R B L/N/P CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S641633F-R(B)L/N/P CMOS SDRAM 1M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.

K4S56163LC

Contextual Info: K4S56163LC-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.4 December. 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S64163LF

Contextual Info: K4S64163LF-R B G/S CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)G/S CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

BFR15

Contextual Info: K4S64163LF-R B F/R CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S561633C

Contextual Info: K4S561633C-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.

Contextual Info: K4M28163PF - R B G/F Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the

Contextual Info: K4M64163PH - R B G/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M64163PH is 67,108,864 bits synchronous high data • LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

K4S561633C

Abstract: K4S561633C-RL
Contextual Info: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.7 December 2001 Rev. 0.7 Dec. 2001 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).

sdram cmos

Contextual Info: CMOS SDRAM K4S28163LD-RF/R 8Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S28163LD-RF/R CMOS SDRAM Revision History Revision 0.0 (December 8. 2000, Preliminary) • First generation of 128Mb Low Power SDRAM (V DD 2.5V, VDDQ 1.8V).

Contextual Info: CMOS SDRAM K4S64163LF-RG/S 4Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S64163LF-RG/S CMOS SDRAM Revision History Revision 0.0 (May. 2001, Target) • First generation of 64Mb Mobile SDRAM 54CSP having TSCR option (VDD 2.5V, VDDQ 1.8V).

Contextual Info: K4S28163LD-R B F/R CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4S28163LD-R(B)F/R CMOS SDRAM 2M x 16Bit x 4 Banks Mobile sDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S561633C-RLN

Contextual Info: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 1.0 February 2001 Rev. 1.0 Feb. 2002 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).

Contextual Info: K4M51153LE - Y P C/L/F Mobile-SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • VDD = 2.5V. The K4M51153LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the

K4M281633F

Contextual Info: K4M281633F - R B E/N/G/C/L/F Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits,

K4S28163LD

Contextual Info: K4S28163LD-R B G/S CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4S28163LD-R(B)G/S CMOS SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S281633D

Contextual Info: K4S281633D-R B L/N/P CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4S281633D-R(B)L/N/P CMOS SDRAM 2M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.

K4S28163LD

Contextual Info: K4S28163LD-R B L/N/P CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4S28163LD-R(B)L/N/P CMOS SDRAM 2M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S56163LC

Contextual Info: K4S56163LC-R B F/R CMOS SDRAM 16Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)F/R CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

Contextual Info: CMOS SDRAM K4S56163LC-RL/N/P 16Mx16 SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S56163LC-RL/N/P CMOS SDRAM Revision History Revision 0.0 (Oct. 2001, Preliminary) • First generation of 256Mb SDRAM 54CSP datasheet without PASR and TCSR function (V DD 2.5V, VDDQ 1.8V & 2.5V).

K4M56163

Contextual Info: K4M56163PE - R B G/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design make a device controlled precisely

Contextual Info: K4M511533E - Y P C/L/F Mobile-SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V or 3.3V power supply. The K4M511533E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,

Contextual Info: CMOS SDRAM K4S56163LC-RG/S 16Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S56163LC-RG/S CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target) • First generation of 256Mb Low Power SDRAM having TCSR option. (V DD 2.5V, V DDQ 1.8V).

Contextual Info: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

Contextual Info: V DD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 V DD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RL(N) CMOS SDRAM Revision History Revision 0.0 (Oct. 2001, Preliminary) • First generation of 256Mb SDRAM 54CSP datasheet without PASR and TCSR function (V DD 2.5V, VDDQ 1.8V & 2.5V).