16MBIT Search Results

AxC11

Contextual Info: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.

Contextual Info: S IE M E N S HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 M Bit S yn ch ro n o u s DRAM fo r High S peed G raph ics A p p lication s • High Performance: full page optional around for sequencial wrap -6 -7 Units fCKm ax @ CL=3 166 143 MHz tCK3 6 7

MR27V1652D

Abstract: DIP42-P-600-2 MR27V1652DMA MR27V1652DRA
Contextual Info: ¡ Semiconductor 1A MR27V1652D 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V1652D is a 16Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8

MSM27V1655CZ

Contextual Info: ¡ Semiconductor 1A MSM27V1655CZ 524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM DESCRIPTION The MSM27V1655CZ is a 16Mbit electrically Programmable Read-Only Memory with page mode. Its

LHF00L31

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LHF00L31 Flash Memory 16Mbit 1Mbitx16 (Model Number: LHF00L31) Spec. Issue Date: May 25, 2004 Spec No: FM045026 LHF00L31 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

UT9Q512K32

Contextual Info: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT9Q512K32E RadTol product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a

Contextual Info: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Preliminary Data Sheet February 29, 2008 INTRODUCTION The UT9Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs

Contextual Info: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Preliminary Data Sheet February 29, 2008 INTRODUCTION The UT9Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs

Contextual Info: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in

Contextual Info: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs

DIP42-P-600-2

Abstract: MR27V1602D
Contextual Info: O K I Semiconductor MR27V1602D_ Preliminary 1A 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM_ DESCRIPTION The MR27V1602D is a 16Mbit electrically Program mable Read-Only Memory whose configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8bit. The MR27

1MX16

Abstract: CCIR601 CCIR656 PBGA388
Contextual Info: STPC CONSUMER-S PC Compatible Embeded Microprocessor • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ POWERFUL x86 PROCESSOR 64-BIT 66MHz SDRAM UMA CONTROLLER -SUPPORTS 16Mbit SDRAMs 4MX4, 2MX8, 1MX16 . VGA & SVGA CRT CONTROLLER 2D GRAPHICS ENGINE

MR27V1602D

Abstract: DIP42-P-600-2 MR27V1602DMA MR27V1602DRA
Contextual Info: ¡ Semiconductor 1A MR27V1602D 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM DESCRIPTION The MR27V1602D is a 16Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8bit. The MR27

JED-STD-020

Contextual Info: 512K x 32 SRAM MEMORY PUMA 68SV16000B-020/025/35 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 2.0 : May 2001 Description Features The PUMA 68SV16000B/AB is a 16Mbit CMOS High • Very Fast Access Times of 20, 25, 35 ns.

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816ADC PRELIMINARY 16Mbit 2M X 8 BIT CMOS NAND EEPROM Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as

Contextual Info: mosaic 512Kx 32 SRAM MODULE semiconductor, inc. SYS32512ZK/LK - 020/025/30/35 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS32512ZK/LK is plastic 16Mbit Static RAM Module housed in a 72 pin plastic SIMM, ZIP

Contextual Info: mosaic 2M x 8 SRAM MODULE semiconductor, inc. SYS82000FK - 020/025/35 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Issue 1.1 : February 1999 Fax No: (619) 674 2230 Description Features The SYS82000FK is a plastic 16Mbit Static RAM

Contextual Info: 512K x 32 SRAM MEMORY semiconductor, inc. PUMA 68SV16000X - 015/020/025 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 1.1 : December 1998 Features Description The PU M A68SV16000X is a low voltage (3.3V) 16Mbit

Contextual Info: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V58C2256 804/404/164 SA HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)

Contextual Info: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns

Contextual Info: V59C1G02168QBP HIGH PERFORMANCE 2Gbit DDR2 SDRAM 8 BANKS X 16Mbit X 16 3 25A 25 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time tCK3 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns Clock Cycle Time (tCK5) 3ns 3ns 2.5ns Clock Cycle Time (tCK6) 3ns 2.5ns