K1S161611A
Abstract: K1S161611A-I
Text: Preliminary K1S161611A UtRAM Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft October 6, 2003 0.1 Revised - Added Lead Free 48-FBGA-6.00x7.00 Product November 25, 2003 Preliminary
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K1S161611A
1Mx16
48-FBGA-6
55/Typ.
35/Typ.
K1S161611A
K1S161611A-I
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K1S1616B1A
Abstract: K1S1616B1A-I
Text: Preliminary UtRAM K1S1616B1A Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark October 6, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K1S1616B1A
1Mx16
K1S1616B1A
55/Typ.
35/Typ.
K1S1616B1A-I
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1MX16
Abstract: CCIR601 CCIR656 PBGA388
Text: STPC CONSUMER-S PC Compatible Embeded Microprocessor • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ POWERFUL x86 PROCESSOR 64-BIT 66MHz SDRAM UMA CONTROLLER -SUPPORTS 16Mbit SDRAMs 4MX4, 2MX8, 1MX16 . VGA & SVGA CRT CONTROLLER 2D GRAPHICS ENGINE
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64-BIT
66MHz
16Mbit
1MX16)
16-BIT
1MX16
CCIR601
CCIR656
PBGA388
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Untitled
Abstract: No abstract text available
Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time
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0316409C
0316169C
0316809C
1Mx16
16Mbit
-12ns
545-DRAM;
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Untitled
Abstract: No abstract text available
Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page
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0316409C
0316169C
0316809C
1Mx16
16Mbit
SM2402T-6
SM2403T-6
SM2404T-6
SM2402T-7
SM2403T-7
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Untitled
Abstract: No abstract text available
Text: K3N5V U 1000E-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF
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1000E-D
16M-Bit
/1Mx16)
100ns
120ns
100pF
1000E-DC
42-DIP-600
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Untitled
Abstract: No abstract text available
Text: K3P5C1000D-D G C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access
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K3P5C1000D-D
16M-Bit
/1Mx16)
100ns
150mA
K3P5C1000D-DC
42-DIP-600
K3P5C1000D-GC
44-SOP-600
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Untitled
Abstract: No abstract text available
Text: K3N5V U 1000E-TC CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF
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1000E-TC
16M-Bit
/1Mx16)
100ns
120ns
100pF
44-TSOP2-400
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642006EGM1G09TD
Abstract: DIMM 1998
Text: 2M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 642006EGM1G09TD 168 Pin 2Mx64 EDO DIMM Unbuffered, 1k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 2Mx64 bit, 9 chip, 3.3V, 168 Pin DIMM module consisting of (8) 1Mx16 (TSOP) DRAM
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642006EGM1G09TD
2Mx64
DS390-1
DIMM 1998
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Untitled
Abstract: No abstract text available
Text: UG52W661 4 6GSG 16M Bytes (2M x 64) DRAM 168Pin DIMM based on 1M x 16 General Description Features The UG52W661(4)6GSG is a 2,097,152 bits by 64 DRAM module. The UG52W661(4)6GSG is assembled using 8 pcs of 1Mx16 1K/4K refresh DRAMs in 44-pin TSOP package,
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UG52W661
168Pin
1Mx16
44-pin
1000mil)
350Max
89Max
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Untitled
Abstract: No abstract text available
Text: IS62/65WV102416EALL IS62/65WV102416EBLL PRELIMINARY INFORMATION FEBRUARY 2014 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES • High-speed access time: 45ns, 55ns CMOS low power operation – 30 mW typical operating
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IS62/65WV102416EALL
IS62/65WV102416EBLL
1Mx16
62/65WV102416EALL)
62/65WV102416EBLL)
IS62WV102416EALL/BLL
IS65WV102416EALL/BLL
1024K
16bits.
IS65WV102416EALL-55BA3
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MX29LV160CBTC-90
Abstract: 29LV160C MX29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13
Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of
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MX29LV160C
16M-BIT
2Mx8/1Mx16]
100mA
Pac9/2006
MX29LV160CBTC-90
29LV160C
MX29LV160B
MX29LV160CT
SA10
SA11
SA12
SA13
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pc133 sdram
Abstract: HYM4V33100DTYG-75
Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one
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1Mx32
PC133
1Mx16
HYM4V33100DTYG
1Mx16bits
1Mx16bits
400mil
50pin
132pin
pc133 sdram
HYM4V33100DTYG-75
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Untitled
Abstract: No abstract text available
Text: SMART SM5640230UUXUGU Modular Technologies March 31, 1997 16MByte 2M x 64 DRAM Module - 1Mx16 based 168-pin DIMM, Buffered Features Part Numbers • • • • • • • • • • • SM56402300UXUGU SM56402301UXUGU SM56402308UXUGU SM56402309UXUGU
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SM5640230UUXUGU
16MByte
1Mx16
168-pin
SM56402300UXUGU
SM56402301UXUGU
SM56402308UXUGU
SM56402309UXUGU
60/70/80ns
400mil
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16202
Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery
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1MX16/2MX8
HY23V16202
HY23V16202
42pin
100/120ns
44TSOP-II
16202
HY23V16202D
HY23V16202S
HY23V16202T
48TSOP
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Untitled
Abstract: No abstract text available
Text: KM23C16005D G CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access
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KM23C16005D
16M-Bit
/1Mx16)
100ns
150mA
KM23C16000D
42-DIP-600
KM23C16005DG
44-SOP-600
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Untitled
Abstract: No abstract text available
Text: KM23V16205DSG CMOS MASK ROM 16M-Bit 1Mx16 /512Kx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 4 double Words / 8 Words page access
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KM23V16205DSG
16M-Bit
1Mx16
/512Kx32)
100ns
70-SSOP-500
KM23V16205DSG
70-SSOP-500)
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F224CJ1 KMM366F224CJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224CJ1 is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F224CJ1 consists of eight CMOS 1Mx16bits DRAMs in SOJ 400mil
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KMM366F224CJ1
1Mx16,
2Mx64bits
1Mx16bits
400mil
168-pin
KMM366F224CJ1
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s - ck5t
Abstract: CA52
Text: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification
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KMM5321200BW/B
KMM5321200BW/BWG
1Mx32
1Mx16
KMM5321200BW
42-pin
72-pin
s - ck5t
CA52
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KM416C1200AJ
Abstract: ra57
Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification
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M5321200AW/AWG
KMM5321200AW/AWG
1Mx32
1Mx16
KMM5321200AW
42-pin
72-pin
KMM5321200AW
KM416C1200AJ
ra57
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process
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1Mx16,
16-bit
1Mx16
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Untitled
Abstract: No abstract text available
Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs
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16Mbit
HY57V164010-
HY57V168010-
HY57V161610-
1Mx16bit
HY57V164010,
HY57V168010,
HY57V161610
512Kbit
1SD10-Q3-NOV96
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Untitled
Abstract: No abstract text available
Text: tVHITE MICROELECTRONICS 1Mx16 CMOS FPM Dynamic RAM WPD1M16-XTJX PRELIMINARY# PLASTIC PLUS FEATURES • Fast Access Time I rac : 70, 8 0 ,100ns PIN CONFIGURATION TOP VIEW ■ Power Supply: 5V±0.5V ■ Packaging Vcc C 1 DQO C 2 DQ1 C 3 DQ2 C 4 DQ3 C 5 Vcc C 6
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1Mx16
WPD1M16-XTJX
100ns
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Untitled
Abstract: No abstract text available
Text: HYM41V331OODTYG 1Mx32, 1Mx16 based, PC133 DESCRIPTION T he H ynix H Y M 4V33100D TY G Series are 1M x16bits Synchronous DRAM M odules. T he m odules are com posed o f tw o 1M x16bits CM O S S ynchronous DR AM s in 400m il 50pin TSOP-H package, on a 132pin glass-epoxy printed circuit board. T w o 0.22uF and one
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HYM41V331OODTYG
1Mx32,
1Mx16
PC133
4V33100D
x16bits
50pin
132pin
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