0316409C Search Results

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 512Kx32 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time

031-6169

Contextual Info: I = = = ¥ = IB M 0 3 1 6 4 y 9 z IB M 0 3 1 6 8 y 9 z IB M 0 3 1 6 1 6 9 z - y=0,B z=C,P,D,Q Preliminary

Contextual Info: 0316409C IBM0316809C IBM0316169C 16Mb S ynchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 : -12 : CL=3 ; CL=3 Units ; MHz : fcK Clock Frequency : io o I 83 tcK Clock Cycle ; 10 Uc Clock Access Tim e Ì • Automatic and Controlled Precharge Command

Contextual Info: 0316409C IBM0316809C IBM0316169C IBM03164B9C Prelim inary 16M b S y n c h r o n o u s D R A M -D ie Revision E Features • M ultiple Burst Read w ith Single W rite O ption • High Perform ance: CL=3 : CL=2 / 3 ; CL=3 i: c. 3 • Units ; • A utom atic and C ontrolled Precharge C om m and

Contextual Info: 0316409C IBM0316809C IBM0316169C 16M b S yn c h ro n o u s D RAM Features • High Performance: I • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command I cl% j C L ^ S i Units j 100 83 ! MHz ; • Data Mask for Read/W rite control x4,x8

0316809c

Contextual Info: Alphanumeric Index Part Num ber Type O rganization Features Page Num ber IBM011616 0. D R A M . 1M x 1 6 . 12/8, 5 .0 V . . 249 IBM0116160 B . . D R A M . 1M x 1 6 . 12/8, 3 .3 V . 249

5285-04

Contextual Info: I =¥= =•= 0316409C IBM0316809C IBM0316169C IBM03164B9C P relim inary -80,-322 16M b S yn ch ro n o u s D R A M -D ie R evision D Features • Multiple Burst Read with Single Write Option • High Performance: i I fcK ! Clock Frequency -80 CL=3

IBM0316809CT3D80

Abstract: IBM0316169C IBM0316809C
Contextual Info: Discontinued 12/98 - last order; 9/99 last ship . 0316409C IBM0316809C IBM0316169C IBM03164B9C 16Mb Synchronous DRAM-Die Revision D Features • Multiple Burst Read with Single Write Option • High Performance: -80 CL=3 -360 CL=3 -10 CL=3 Units 125 100

Contextual Info: IB M 0 3 1 6 4 y 9 z IB M 0 3 1 6 8 y 9 z IB M 0 3 1 6 1 6 9 z y=0,B z=C,P,D,Q 16Mb Synchronous DRAM P relim inary Features • M ultiple Burst Read w ith Single W rite O ption • A utom atic and C ontrolled P recharge C om m and • High Perform ance: -70

IT2205

Abstract: IBM0316809CT3-10 g618ac
Contextual Info: 0316409CIBM0316809C IBM0316169C 16Mbit S yn ch ro n o u s DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91

0316169CT3D

Abstract: 0316809CT3D cb 10 b 60 kd
Contextual Info: I = = = = = = — = *= IB M 0 3 1 6 4 0 9 C P r e l i m i n a r y 1 M x 1 6 , -80; - 3 6 0 IB M 0 3 1 6 8 0 9 C IB M 0 3 1 6 1 6 9 C IB M 0 3 1 6 4 B 9 C 16M b S y n c h r o n o u s D R A M -D ie Revision D Features • Multiple Burst Read with Single Write Option

0316169CT3D

Contextual Info: I = = = ¥ = = = = IB M 0 3 1 6 4 0 9 C - = IB M 0 3 1 6 8 0 9 C IB M 0 3 1 6 1 6 9 C IB M 0 3 1 6 4 B 9 C P relim inary 1M x16, -80; -360 16M b S yn ch ro n o u s D R A M -D ie R evision D Features • Multiple Burst Read with Single Write Option • High Performance: