IBM03164B9C Search Results

Contextual Info: IBM0316409C IBM0316809C IBM0316169C IBM03164B9C Prelim inary 16M b S y n c h r o n o u s D R A M -D ie Revision E Features • M ultiple Burst Read w ith Single W rite O ption • High Perform ance: CL=3 : CL=2 / 3 ; CL=3 i: c. 3 • Units ; • A utom atic and C ontrolled Precharge C om m and

Contextual Info: IBM03168B9C IBM03164B9C 16Mb Synchronous Stacked DRAM Features • High Performance: • Multiple Burst Read with Single Write Option I I fc K ! Clock Frequency -10 CL=3 1 1 0 0 tcK ! Clock Cycle I 10 tftc ! Clock Access Time I 8 i -12 CL=3 Units • Automatic and Controlled Precharge Command

5285-04

Contextual Info: I =¥= =•= IBM0316409C IBM0316809C IBM0316169C IBM03164B9C P relim inary -80,-322 16M b S yn ch ro n o u s D R A M -D ie R evision D Features • Multiple Burst Read with Single Write Option • High Performance: i I fcK ! Clock Frequency -80 CL=3

IBM0316809CT3D80

Abstract: IBM0316169C IBM0316809C
Contextual Info: Discontinued 12/98 - last order; 9/99 last ship . IBM0316409C IBM0316809C IBM0316169C IBM03164B9C 16Mb Synchronous DRAM-Die Revision D Features • Multiple Burst Read with Single Write Option • High Performance: -80 CL=3 -360 CL=3 -10 CL=3 Units 125 100

Contextual Info: IBM03168B9C IBM03164B9C 16Mb Synchronous Stacked DRAM Features • High Performance: • Multiple Burst Read with Single Write Option I I fc K ! Clock Frequency -10 CL=3 1 1 0 0 tcK ! Clock Cycle I 10 tftc ! Clock Access Time I 8 i -12 CL=3 Units • Automatic and Controlled Precharge Command

031-6169

Contextual Info: I = = = ¥ = IB M 0 3 1 6 4 y 9 z IB M 0 3 1 6 8 y 9 z IB M 0 3 1 6 1 6 9 z - y=0,B z=C,P,D,Q Preliminary

Contextual Info: IB M 0 3 1 6 4 y 9 z IB M 0 3 1 6 8 y 9 z IB M 0 3 1 6 1 6 9 z y=0,B z=C,P,D,Q 16Mb Synchronous DRAM P relim inary Features • M ultiple Burst Read w ith Single W rite O ption • A utom atic and C ontrolled P recharge C om m and • High Perform ance: -70

Contextual Info: IB M 0 3 1 6 4 y 9 z IB M 0 3 1 6 8 y 9 z IB M 0 3 1 6 1 6 9 z y=0,B z=C,P,D,Q 16Mb Synchronous DRAM P relim inary Features • M ultiple Burst Read w ith Single W rite O ption • A utom atic and C ontrolled P recharge C om m and • High Perform ance: -70

Contextual Info: IB M 03168B 9C IB M 03164B 9C 16M b S y n c h r o n o u s S ta c k e d D R A M F e a tu re s • High Performance: • Multiple Burst Read with Single Write Option • Í -1Û : -12 CL=3 : CL=3 ;! fcK ; Clock Frequency I 1 00 I 83 :j MHz \ ; tCK ¡ClockCycle

0316169CT3D

Abstract: 0316809CT3D cb 10 b 60 kd
Contextual Info: I = = = = = = — = *= IB M 0 3 1 6 4 0 9 C P r e l i m i n a r y 1 M x 1 6 , -80; - 3 6 0 IB M 0 3 1 6 8 0 9 C IB M 0 3 1 6 1 6 9 C IB M 0 3 1 6 4 B 9 C 16M b S y n c h r o n o u s D R A M -D ie Revision D Features • Multiple Burst Read with Single Write Option

0316169CT3D

Contextual Info: I = = = ¥ = = = = IB M 0 3 1 6 4 0 9 C - = IB M 0 3 1 6 8 0 9 C IB M 0 3 1 6 1 6 9 C IB M 0 3 1 6 4 B 9 C P relim inary 1M x16, -80; -360 16M b S yn ch ro n o u s D R A M -D ie R evision D Features • Multiple Burst Read with Single Write Option • High Performance: