Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTP IXTP IXTP IXTP Search Results

    SF Impression Pixel

    IXTP IXTP IXTP IXTP Price and Stock

    IXYS Corporation IXTP26P20P

    MOSFETs -26.0 Amps -200V 0.170 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP26P20P 7,054
    • 1 $6.95
    • 10 $5.41
    • 100 $3.77
    • 1000 $3.53
    • 10000 $3.53
    		Buy Now

    IXYS Corporation IXTP08N120P

    MOSFETs 0.8 Amps 1200V 25 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP08N120P 3,343
    • 1 $4.28
    • 10 $3.33
    • 100 $2.71
    • 1000 $1.98
    • 10000 $1.98
    		Buy Now

    IXYS Corporation IXTP32P20T

    MOSFETs TenchP Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP32P20T 3,008
    • 1 $8.4
    • 10 $7.39
    • 100 $4.63
    • 1000 $4.46
    • 10000 $4.46
    		Buy Now

    IXYS Corporation IXTP36N30P

    MOSFETs 36 Amps 300V 0.11 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP36N30P 2,957
    • 1 $4.09
    • 10 $3.63
    • 100 $2.55
    • 1000 $2.23
    • 10000 $2.23
    		Buy Now

    IXYS Corporation IXTP96P085T

    MOSFETs -96 Amps -85V 0.013 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP96P085T 2,708
    • 1 $5.16
    • 10 $4.61
    • 100 $3.16
    • 1000 $3.16
    • 10000 $3.16
    		Buy Now
    Find more IXTP IXTP IXTP IXTP price and stock on Findchips.com

    IXTP IXTP IXTP IXTP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTP IXTP IXTP IXTP

    Abstract: 2R4N50P
    Text: IXTP 2R4N50P IXTY 2R4N50P Advance Technical Information PolarHVTM Power MOSFET IXTP 2R4N50P IXTY 2R4N50P VDSS ID25 RDS on = 500 = 2.4 ≤ 3.75 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 2R4N50P IXTP IXTP IXTP IXTP 2R4N50P

    98844

    Abstract: No abstract text available
    Text: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt VDSS ID25 RDS on 1200 V 1100 V 3A 3A 4.5 Ω 4.0 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 3N120 3N110 3N110 O-220 O-263 125OC 98844

    3n120

    Abstract: 125OC 3N110 IXTP3N120
    Text: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt VDSS ID25 RDS on 1200 V 1100 V 3A 3A 4.5 Ω 4.0 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 3N120 3N110 O-220 VDSS40 125OC 3n120 125OC 3N110 IXTP3N120

    IXTP50N20PM

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTP 50N20PM VDSS ID25 RDS on (Electrically Isolated Tab) = 200 V = 20 A ≤ 60 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Maximum Ratings OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C


    Original     		PDF 50N20PM O-220 50N20P 02-16-06-E IXTP50N20PM

    3n120

    Abstract: 3N110 98844
    Text: ADVANCE TECHNICAL INFORMATION High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 3N120 3N110 3N110 O-220 O-263 98844

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM IXTP 180N055T IXTQ 180N055T VDSS = 55 V ID25 = 180 A Ω RDS on = 4.0 mΩ TO-220 (IXTP) Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1


    Original     		PDF ISOPLUS220TM 180N055T 180N055T O-220 O-220) 123B1 728B1 065B1 IXTP180N055T

    4N60P

    Abstract: IXTA4N60P IXTP4N60P IXTY4N60P
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 4N60P IXTP 4N60P IXTY 4N60P VDSS ID25 RDS on = 600 = 4 ≤ 1.9 V A Ω N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 4N60P O-220 O-263 4N60P IXTA4N60P IXTP4N60P IXTY4N60P

    5n60p

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 5N60P O-220 O-263 O-263 O-220) 405B2 5n60p

    3N120

    Abstract: transistor tl 187 125OC 3N110 IXTP IXTP IXTP IXTP
    Text: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 3N120 3N110 1200 1100 V V VGS


    Original     		PDF 3N120 3N110 O-220 125OC 728B1 3N120 transistor tl 187 125OC 3N110 IXTP IXTP IXTP IXTP

    IXTP16N50PM

    Abstract: 16N50 16N50P
    Text: Advance Technical Information IXTP16N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 500V = 7.5A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions


    Original     		PDF IXTP16N50PM 16N50P 4-30-09-C IXTP16N50PM 16N50

    IXTP18N60PM

    Abstract: 18N60P
    Text: Preliminary Technical Information IXTP18N60PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 600V = 9A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTP18N60PM O-220 18N60P 8-21-06-B IXTP18N60PM

    IXTP22N50PM

    Abstract: 22N50 22N50P
    Text: Advance Technical Information IXTP22N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 500V = 11A Ω ≤ 290mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions VDSS


    Original     		PDF IXTP22N50PM 22N50P 1-09-A IXTP22N50PM 22N50

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET IXTA7N60PM IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol


    Original     		PDF IXTA7N60PM IXTP7N60PM O-220 7N60P 06-17-08-D

    IXTH96P085T

    Abstract: ixtp96 IXTP96P085T 96P085T DS1000-25
    Text: Preliminary Technical Information TrenchPTM Power MOSFET IXTA96P085T IXTP96P085T IXTH96P085T P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on - 85V - 96A Ω 13mΩ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTA96P085T IXTP96P085T IXTH96P085T O-263 O-220 IXTA96P085T 96P085T IXTH96P085T ixtp96 IXTP96P085T DS1000-25

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 LinearL2TM Power MOSFETs w/Extended FBSOA VDSS ID25 = 100V = 64A  32m  RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-263AA (IXTA) G S D (Tab) TO-220AB (IXTP)


    Original     		PDF IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 O-263AA O-220AB O-247 tN10L2 O-247 O-220

    IXTP12N50PM

    Abstract: 12n50p d1518
    Text: PolarTM Power MOSFET IXTP12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTP12N50PM 300ns O-220 12N50P 4-14-08-D IXTP12N50PM d1518

    IXTP12N50PM

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 IXTP12N50PM RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTP12N50PM 300ns O-220 12N50P 4-14-08-D IXTP12N50PM

    3N60P

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA 3N60P IXTP 3N60P IXTY 3N60P PolarHVTM Power MOSFET VDSS ID25 RDS on = 600 = 2.8 ≤ 2.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 3N60P 405B2 3N60P

    IXTH76P10T

    Abstract: IXTA76P10T VDSS -60 RDS 0,50 ID 1,8 A IXTP76P10T
    Text: IXTA76P10T IXTP76P10T IXTH76P10T TrenchPTM Power MOSFET VDSS ID25 = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 76A Ω 25mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXTA76P10T IXTP76P10T IXTH76P10T O-263 O-220AB O-247 IXTA76P10T 76P10T IXTH76P10T VDSS -60 RDS 0,50 ID 1,8 A IXTP76P10T

    IXTU1N80P

    Abstract: T1N80 1N80P
    Text: Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) S Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF O-263 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-251 O-220 IXTU1N80P T1N80 1N80P

    Untitled

    Abstract: No abstract text available
    Text: TrenchPTM Power MOSFET VDSS ID25 IXTA120P065T IXTP120P065T IXTH120P065T = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 65V - 120A Ω 10mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXTA120P065T IXTP120P065T IXTH120P065T O-263 O-220AB O-247 IXTA120P065T 120P065T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTP60N10TM = 100V = 33A Ω ≤ 19mΩ RDS on N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 W/ FORMED LEAD (IXTP.M) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		PDF IXTP60N10TM O-220 60N10T 7-08-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTP64N055T IXTY64N055T VDSS ID25 = = RDS on ≤ 55 V 64 A Ω 13 mΩ N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) G Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C


    Original     		PDF IXTP64N055T IXTY64N055T O-220 O-252 64N055T

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


    OCR Scan     		PDF 02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D