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    IXTP22N50PM Search Results

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    Contextual Info: Preliminary Technical Information PolarHVTM Power MOSFET VDSS ID25 IXTP22N50PM RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 8A Ω ≤ 270mΩ OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		IXTP22N50PM 100ms 22N50P 7-22-09-B PDF

    22N50

    Abstract: IXTP22N50PM 22N50P
    Contextual Info: Preliminary Technical Information IXTP22N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 8A Ω ≤ 270mΩ OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		IXTP22N50PM 100ms 22N50P 7-22-09-B 22N50 IXTP22N50PM PDF

    IXTP22N50PM

    Abstract: 22N50 22N50P
    Contextual Info: Advance Technical Information IXTP22N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 500V = 11A Ω ≤ 290mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions VDSS


    Original     		IXTP22N50PM 22N50P 1-09-A IXTP22N50PM 22N50 PDF