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    IXTA4N60P Search Results

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    IXTA4N60P Price and Stock

    IXYS Corporation IXTA4N60P

    MOSFET N-CH 600V 4A TO263
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    IXTA4N60P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA4N60P IXYS PolarHV Power MOSFET Original PDF

    IXTA4N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 600 = 4 ≤ 2.0 V A Ω TO-263 (IXTA) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS


    Original
    IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P O-263 O-220 PDF

    IXTP4N60P

    Abstract: IXTA4N60P IXTU4N60P TO-251 weight IXTY4N60P IXTP4N60
    Text: PolarHVTM Power MOSFET IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 600 = 4 ≤ 2.0 V A Ω TO-263 (IXTA) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS


    Original
    IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P O-263 O-220 IXTP4N60P IXTA4N60P IXTU4N60P TO-251 weight IXTY4N60P IXTP4N60 PDF

    4N60P

    Abstract: IXTA4N60P IXTP4N60P IXTY4N60P
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 4N60P IXTP 4N60P IXTY 4N60P VDSS ID25 RDS on = 600 = 4 ≤ 1.9 V A Ω N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    4N60P O-220 O-263 4N60P IXTA4N60P IXTP4N60P IXTY4N60P PDF