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    IXTY1N80P Search Results

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    IXTY1N80P Price and Stock

    Littelfuse Inc IXTY1N80P

    MOSFET N-CH 800V 1A TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTY1N80P Tube 350
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    • 1000 $1.28397
    • 10000 $1.28397
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    Newark IXTY1N80P Bulk 350
    • 1 -
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    • 100 $1.83
    • 1000 $1.44
    • 10000 $1.29
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    Littelfuse Inc IXTY1N80P-TRL

    MOSFET N-CH 800V 1A TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTY1N80P-TRL Reel 2,500
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    Newark IXTY1N80P-TRL Reel 2,500
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    IXYS Corporation IXTY1N80P

    MOSFETs POLAR MOSFET WITH REDUCED RDS 800V 1A
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    Mouser Electronics IXTY1N80P
    • 1 $2.8
    • 10 $2.33
    • 100 $1.83
    • 1000 $1.44
    • 10000 $1.44
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    Future Electronics IXTY1N80P Tube 24 Weeks 70
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    • 100 $1.37
    • 1000 $1.37
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    TTI IXTY1N80P Tube 350
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    • 1000 $1.31
    • 10000 $1.22
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    TME IXTY1N80P 1
    • 1 $2
    • 10 $1.81
    • 100 $1.43
    • 1000 $1.43
    • 10000 $1.43
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    IXYS Corporation IXTY1N80P-TRL

    MOSFET Modules IXTY1N80P TRL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTY1N80P-TRL
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    TTI IXTY1N80P-TRL Reel 2,500
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    • 10000 $1.17
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    IXTY1N80P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTY1N80P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1A TO-252 Original PDF

    IXTY1N80P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N80P

    Abstract: T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P
    Text: Preliminary Technical Information PolarTM Power MOSFET IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) D S Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original
    PDF IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-263 O-251 O-220 1N80P T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P

    IXTU1N80P

    Abstract: T1N80 1N80P
    Text: Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) S Test Conditions VDSS TJ = 25°C to 150°C


    Original
    PDF O-263 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-251 O-220 IXTU1N80P T1N80 1N80P