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    02N5 Search Results

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    02N5 Price and Stock

    Walsin Technology Corporation 0402N5R6D500CT

    CAP CER 5.6PF 50V C0G/NP0 0402
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    DigiKey 0402N5R6D500CT Cut Tape 16,451 1
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    0402N5R6D500CT Digi-Reel 16,451 1
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    0402N5R6D500CT Reel 10,000 10,000
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    Newark 0402N5R6D500CT Cut Tape 7,460 10
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    TME 0402N5R6D500CT 10,000
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    Avnet Asia 0402N5R6D500CT 10 Weeks 10,000
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    Novacap MD0402N5R6C500YHT-EM

    CAP CER 5.6PF 50V C0G/NP0 0402
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    DigiKey MD0402N5R6C500YHT-EM Digi-Reel 9,980 1
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    MD0402N5R6C500YHT-EM Cut Tape 9,980 1
    • 1 $1.03
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    • 100 $1.03
    • 1000 $0.37161
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    Walsin Technology Corporation 0402N560J500CT

    CAP CER 56PF 50V C0G/NP0 0402
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    DigiKey 0402N560J500CT Digi-Reel 8,997 1
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    Newark 0402N560J500CT Cut Tape 11,900 10
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    0402N560J500CT Reel 10,000 10,000
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    TME 0402N560J500CT 10,000
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    ComSIT USA 0402N560J500CT 10,000
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    3M Interconnect 3S502-N530-G00-PN-500

    MINI STACK CONNECTOR WIREMOUNT S
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    DigiKey 3S502-N530-G00-PN-500 Box 500 1
    • 1 $2.21
    • 10 $1.878
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    IXYS Corporation IXTU02N50D

    MOSFET N-CH 500V 200MA TO251
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    DigiKey IXTU02N50D Tube 356 1
    • 1 $2.69
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    • 100 $1.25586
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    TTI IXTU02N50D Tube 1,400 20
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    02N5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TO-220AD

    Abstract: No abstract text available
    Text: High Voltage MOSFET IXTP 02N50D VDSS ID25 N-Channel, Depletion Mode RDS on = 500 V = 200 mA = 30 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20


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    02N50D O-220AD 405B2 TO-220AD PDF

    02N5

    Abstract: IXTP 02N50D
    Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 02N50D IXTU 02N50D IXTY 02N50D VDSS = 500 V ID25 = 200 mA RDS on = 30 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS Continuous


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    02N50D O-220 405B2 02N5 IXTP 02N50D PDF

    TO-220AD

    Abstract: 02N5 IXTP 02N50D depletion MOSFET
    Text: Advance Technical Information High Voltage MOSFET IXTP 02N50D VDSS ID25 N-Channel, Depletion Mode RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25


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    02N50D O-220AD TO-220AD 02N5 IXTP 02N50D depletion MOSFET PDF

    02N5

    Abstract: No abstract text available
    Text: 02N5817 THRU 02N5819 LOW Vf SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 0.2 Ampere FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capability High surge capabitity High reliability


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    02N5817 02N5819 DO-41 MIL-STD-202E 02N5 PDF

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


    OCR Scan
    02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 02N50 Preliminary Power MOSFET 0.2A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 02N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high breakdown voltage  FEATURES * RDS on =75Ω @VGS=10V, ID=0.15A


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    02N50 02N50 02N50L-TM3-T 02N50G-TM3-T O-251 QW-R502-975 PDF

    Untitled

    Abstract: No abstract text available
    Text: 02N5817 THRU 02N5819 LOW Vf SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 0.2 Ampere FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capability High surge capabitity High reliability


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    02N5817 02N5819 DO-41 MIL-STD-202E PDF

    IXTD24P20

    Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
    Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M


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    02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10 PDF

    Untitled

    Abstract: No abstract text available
    Text: RoHS C om plian t SUPER LOW Vf SCHOTTKY RECTIFIERS PLASTIC MATERIAL HAS UL 94V-0 CLASSIFICATION o o OPERATING AND STORAGE TEMPERATURE RANGE -55 C to +150 C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @ Half-Wave Resistive Load


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    02N17 02N18 02N19 02S20 02S30 02S40 02S50 02S60 SCHOTTKY/DO-41 05N5817 PDF

    cn/A/U 237 BG

    Abstract: No abstract text available
    Text: www.avx.com AVX RF Microwave Products Version 15.1 AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and


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    S-RFMTF0M115-C cn/A/U 237 BG PDF

    02N50C3

    Abstract: 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490
    Text: 02N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


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    SPD02N50C3 P-TO252-3-1 Q67040-S4570 02N50C3 02N50C3 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490 PDF

    AFM02N8-32

    Abstract: 02N5 02N50 AF035P1-00
    Text: MMICs GaAs FETs S p i ?' Low Noise and General Purpose FETs Ta = +25°C Fmin Bias Power Bias Vds Ids (V) (mA) P1 dB (dBm) Thermal Resistance (C/W) Max Dissipated Power (mW) Package Style 30 13.0 260 400 Chip 2 30 11.5 260 400 Chip 15.0 4 30 14.5 260 400


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    02N5-00 AFP02N2-00 AFP02N8-00 AFM02N5-55/56 AFP02N2-55/56 AFP02N8-55/56 AFM02N8-32 -55Z-56 AF035P1-00 AFM06P2-00 AFM02N8-32 02N5 02N50 PDF

    02N5

    Abstract: Al016 AL05A AL05B7N15 AL023130N AL05A1N65KTR
    Text: Air Core RF Inductors AL Series GENERAL DESCRIPTION AVX Air Core RF Inductors, part of the wound air core inductor family, are ideal for RF circuits, broadband I/O filtering, frequency selection, or impedance matching. The air core inductor provides better performance


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    538nH AL05A AL05B AL12A AL12B AL016 AL023 02N5 AL05B7N15 AL023130N AL05A1N65KTR PDF

    02N5

    Abstract: HP8720 AL05A1N65KTR
    Text: Air Core RF Inductors AL Series GENERAL DESCRIPTION AVX Air Core RF Inductors, part of the wound air core inductor family, are ideal for RF circuits, broadband I/O filtering, frequency selection, or impedance matching. The air core inductor provides better performance


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    538nH AL05A AL05B AL12A AL12B AL016 AL023 02N5 HP8720 AL05A1N65KTR PDF

    cn/A/U 237 BG

    Abstract: No abstract text available
    Text: www.avx.com AVX RF Microwave Products Version 13.11 AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and


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    S-RFMTF0M1113-C cn/A/U 237 BG PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


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    B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    02N50C3

    Abstract: 02N50 02N5 SPD02N50C3 Q67040-S4570
    Text: 02N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


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    SPD02N50C3 P-TO252-3-1 Q67040-S4570 02N50C3 02N50C3 02N50 02N5 SPD02N50C3 Q67040-S4570 PDF

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756 PDF