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    DEPLETION Price and Stock

    IXYS Corporation CPC3708ZTR

    MOSFETs N-Channel Depletion Mode FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CPC3708ZTR Reel 10,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.46
    • 10000 $0.333
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    IXYS Corporation CPC3909CTR

    MOSFETs 400V N-Channel Depletion-Mode FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CPC3909CTR Reel 5,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.379
    • 10000 $0.357
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    IXYS Corporation CPC3980ZTR

    MOSFETs N-Ch Depletion Mode Vertical DMOS FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CPC3980ZTR Reel 4,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.371
    • 10000 $0.35
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    IXYS Corporation CPC3902ZTR

    MOSFETs 250V N-Channel Depletion-Mode FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CPC3902ZTR Reel 4,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.388
    • 10000 $0.331
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    IXYS Corporation CPC5602CTR

    MOSFETs N Ch Dep Mode FET 350V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CPC5602CTR Reel 3,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.335
    • 10000 $0.297
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    DEPLETION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS SLVS131A - JULY 1996 Charge Pump Provides Negative Gate Bias for Depletion-Mode GaAs Power Amplifiers GATE_BIAS □ = 10 VCC C1c i+ BATTJN BATTJN BATTJN PGP PG GND 2 3 4 5 6 7 8 9 10 135-mli High-Side Switch Controls Supply


    OCR Scan     		TPS9103 SLVS131A 135-mli 20-Pln 10-ki2 TPS9103 PDF

    DN2450

    Abstract: Voltage to Current Converters marking L2 package SOT A0208
    Text: Supertex inc. DN2450 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


    Original     		DN2450 DSFP-DN2450 A020811 DN2450 Voltage to Current Converters marking L2 package SOT A0208 PDF

    IGBT THEORY AND APPLICATIONS 400V

    Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
    Text: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page


    Original     		AN-1086 1628/D. IGBT THEORY AND APPLICATIONS 400V TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861 PDF

    d2020e

    Abstract: No abstract text available
    Text: SILICONIX INC 18E I Ô5S473S 0014053 fy S iG c o n ix JLm in c o rp o ra te d ND2020 SERIES "T-2.7-7. S N-Channel Depletion-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER 1 • V BR)DSV fDS(ON) (V) (« ) Id (A)


    OCR Scan     		5S473S ND2020 ND2020L ND2020E O-206AC VDDQ20 ND2020E. d2020e PDF

    DN2620

    Abstract: No abstract text available
    Text: DN2620 DN2624 Advanced Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / B^DGX ^DS ON Idss (max) (min) TO-92 DICE 200V 4.0Q 600mA DN2620N3 DN2620ND 240V 4.0Q 600mA DN2624N3 DN2624ND Advanced DMOS Technology


    OCR Scan     		DN2620 DN2624 600mA 600mA DN2620N3 DN2624N3 DN2620ND DN2624ND 300mA, 300jxs PDF

    01N100D

    Abstract: high voltage mosfet n-channel
    Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C


    Original     		01N100D O-220AB high voltage mosfet n-channel PDF

    nd2410l

    Abstract: No abstract text available
    Text: ND2406L, ND2410L N-Channel Depletion-Mode MOS Transistors JBÜSKSS TO-92 TO-226AA PRODUCT SUMMARY T PART NUMBER V (BR)DSS ND2406L 240 6 0.23 ND2410L 240 10 0.18 BOTTOM VIEW >d (A) 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VDDV24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


    OCR Scan     		ND2406L, ND2410L O-226AA) ND2406L ND2410L VDDV24 PDF

    d150n

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Order Number / Package I dss BVdgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0m A LN D 150N 3 LN D 150N 8 LN D 150N D * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.


    OCR Scan     		LND150 O-243AA* OT-89. d150n PDF

    pj 809

    Abstract: No abstract text available
    Text: Product Nomenclature and Ordering Information DMOS Proprietary Products RB HI-REL RB = MIL-STD-883 for Arrays SX = Similar to JANTX SXV = Similar to JANTXV FAMILY TYPE D = Vertical DepletionMode DMOS Discretes L = Lateral DMOS Discretes T = Low Threshold DMOS


    OCR Scan     		MIL-STD-883 LP0701) TN2501) O-236AB OT-23) O-252) T0-220 O-243AA OT-89) O-220 pj 809 PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic BF543 S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications High frequency stages up to 300 MHz. Features • Integrated gate protection diode •


    OCR Scan     		BF543 BF543 D-74025 11-Apr-97 PDF

    S525T

    Abstract: No abstract text available
    Text: Temic S525T S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ “ Applications High frequency stages up to 300 MHz Features • integrated gate protection diode


    OCR Scan     		S525T S525T 26-Mar-97 PDF

    GI 536 DIODES

    Abstract: No abstract text available
    Text: Temic S888T S e m i c o n d u c t o r s N-Channel Dual-Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixer stages in low voltage UHF- and VHFtuner with only 5 V supply voltage and in cordless phones.


    OCR Scan     		S888T S888T 09-Apr-97 GI 536 DIODES PDF

    ND2410L

    Abstract: No abstract text available
    Text: Ä1«ssslä VDDV SERIES DIE N-Channel Depletion-Mode MOS Transistors VDDV1CHP* VDDV2CHP* ND2406L ND2410L ‘ Meets or exceeds specification for all part numbers listed below G ate Pad 0-005 0.127 0 007 (0.178) M* «4 p*« tl» c i U :R *«fl:»iag f u t a _f« * « a « B * S


    OCR Scan     		ND2410L ND2406L VDDV24. ND2410L PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic BF995 S e m i c o n d u c t o r s N-Channel-Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.


    OCR Scan     		BF995 BF995 03-Mar-97 PDF

    N-Channel Depletion-Mode MOSFET high voltage

    Abstract: SOT-23 MARKING mn DW-200 NDE SOT23 MARKING
    Text: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Id s s Order Number / Package Product marking for SOT-23: b v dgx (max) (min) TO-236AB* NDE* 500V 1.0KÌÌ 1.0mA LND250K1 where * = 2-week alpha date code ’ Sam e as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    OCR Scan     		LND250 O-236AB* LND250K1 OT-23: OT-23. N-Channel Depletion-Mode MOSFET high voltage SOT-23 MARKING mn DW-200 NDE SOT23 MARKING PDF

    sst2100

    Abstract: LPD-12
    Text: SILICONIX INC IflE D • 0254735 ODIMGOI 1 ■ SD/SST2100 SERIES C T ’S ilic o n ix J J f in c o rp o ra te d N-Channel Depletion-M ode Lateral DMOS FETs - T The SD/SST2100 Series is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high


    OCR Scan     		SD/SST2100 OT-143 LPD-12 sst2100 LPD-12 PDF

    pseudomorphic HEMT

    Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
    Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm


    Original     		FPD6836SOT343 FPD6836SOT3 OT343 FPD6836SOT343 mx750 1850MHz) 18dBm 2002/95/EC) FPD6836SOT343E FPD6836SOT343E-AG pseudomorphic HEMT TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564 PDF

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


    OCR Scan     		BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T PDF

    N-Channel Depletion-Mode MOSFET high voltage

    Abstract: pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt
    Text: S u p e r t e x inc. LND150 /jrfÌN N-Channel Depletion-Mode vHg/ MOSFET Ordering Information _ Order Num ber / Package BVdsx/ ^DS ON I dss BV dox (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e a s SOT-89. Product shipped on 2000 piece carrie r tape reels.


    OCR Scan     		LND150 LND150N3 O-243AA* LND150N8 LND150ND OT-89. N-Channel Depletion-Mode MOSFET high voltage pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt PDF

    Untitled

    Abstract: No abstract text available
    Text: DMCD N-Channel _ Depletion-Mode MOSFET in c o r p o r a te d DEVICE TYPE PACKAGE Single TO-72 TO-206AF • SD2100 Single Chip • Available as DMCD1CHP TYPICAL CHARACTERISTICS Depletion Mode - Drain Current & On-Reslstance vs. Gate-Source Cutoff Voltage


    OCR Scan     		O-206AF) SD2100 -----10V. PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertax inc. DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdsx/ R d s o n b v dgx (max) (min) TO-92 Die 240V 4.0£2 600mA DN2624N3 DN2624ND •d s s Advanced DMOS Technology Features □ High input impedance


    OCR Scan     		DN2624 600mA DN2624N3 DN2624ND PDF

    FPD750SOT89

    Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
    Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		FPD750SOT89 25dBm 39dBm FPD750SOT89 25mx1500m FPD750SOT89E: FPD750SOT89CE-BC FPD750SOT89CE-BE FPD750SOT89CE-BG BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E PDF

    0603 footprint IPC

    Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
    Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		FPD3000SOT89 FPD3000SOT8 30dBm 45dBm FPD3000SOT89 25mx1500m FPD3000SOT89E: FPD3000SOT89CE-BD FPD3000SOT89CE-BE FPD3000SOT89CE-BG 0603 footprint IPC FPD3000 TRANSISTOR BC 157 FPD3000SOT89E PDF

    FPD1500

    Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
    Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		FPD1500DFN FPD1500DFN mx750 27dBm 85GHz 42dBm 85GHz) EB1500DFN-BA FPD1500 SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE PDF