S852T Search Results

transistor LC 945

Contextual Info: Temic S852TW Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage

transistor marking 1p Z

Contextual Info: Tem ic S852T Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage

S852T

Abstract: S852TW
Contextual Info: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage

Contextual Info: Not for new design, this product will be obsoleted soon S852TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

NPN transistor mhz s-parameter

Abstract: 945 TRANSISTOR S852T
Contextual Info: S852T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption

lc 945 p transistor

Abstract: 362-0 transistor
Contextual Info: T em ig S852T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. mk Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features

sot-23 MARKING 636

Contextual Info: S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead Pb -free component Component in accordance to RoHS 2002/95/EC

S852T

Abstract: S852TW transistor d 945
Contextual Info: S852T/S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage

S852T

Abstract: NPN transistor mhz s-parameter
Contextual Info: S852T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption

Contextual Info: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage

S852T

Abstract: S852TW
Contextual Info: S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead Pb -free component Component in accordance to RoHS 2002/95/EC

945 TRANSISTOR

Abstract: SOT-490 S852TF
Contextual Info: S852TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

S852TF

Abstract: transistor 945 transistor C 945 ic 945
Contextual Info: S852TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

S852TW

Abstract: NPN transistor mhz s-parameter
Contextual Info: S852TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption

1251 sot-23

Contextual Info: S852T / S852TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • Low supply voltage Low current consumption 50 Ω input impedance at 945 MHz Low noise figure High power gain 2 Applications SOT-23 3 1 2 For low noise and high gain broadband amplifiers at

Contextual Info: S852TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

945 TRANSISTOR

Abstract: S852TF
Contextual Info: S852TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

Contextual Info: Not for new design, this product will be obsoleted soon S852T / S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • • • SOT-23 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure

U2740B-FP

Abstract: NPN planar RF transistor 16 bit ic rf encoder programmable read write transponder transistor C892 e5550F-S8 M44C0W RF ENCODER RF 125khz receiver ir preamplifier
Contextual Info: Tem ic S e m i c o n d u c t o r s Selector Guide Remote Control Part Number Function Key Features Package IR Transm itter / Receiver BPV23NF PIN diode IR photo detector, 875 to 950 nm, sensitivity typical 65 ^A TSHA520. IR emitter family High efficiency, ± 12°, 875 nm

U4311B-C

Abstract: rc car receiver remote control rc car circuit diagram
Contextual Info: T e m ic U4311B Se m i co n ü u c tors Low-Current Superhet Remote Control Receiver Description The U 431IB is a monolithic integrated circuit in bipolar technology for low-current UHF remote control super­ heterodyne receivers in amplitude- or frequencymodulated mode. Typical applications are keyless car

capacitor 47 vishay

Contextual Info: TEMIC U4314B S e m i c o n ü u c tors Logarithmic AM Demodulator / RSSI Description The U4314B is a monolithic Integrated Circuit in bipolar technology for low current super-heterodyne receivers. It can be used as a logarithmic Received Signal Strength Indicator RSSI or as a logarithmic AM demodulator. Its

ir transmitter receiver

Abstract: NPN planar RF transistor 4311B U2535B RF amplifier SOT23 5 IC for IR receiver fm transmitter dip 200 hn ir remote decoder IC rf transmitter receiver
Contextual Info: Tem ic Semiconductors # * SOT23 SOT143 S08 DIP16 ► SOK SS028 Remote Control/ Keyless Entry ICs Part Number Function Key Features Package Source IR Transmitter / Receiver BPV23NF PIN diode see Opto section IR photo detector, 875 to 950 nm, sensitivity typical 65 |UA

M44C260

Abstract: ultrasonic transmitter and receiver Mhz Transmitter with SAW-based Oscillator da5276 RF Transmitter receiver ICs u2535b ir remote decoder IC ir remote transmitter and receiver circuit RF encoder used in transmitter S852T
Contextual Info: T em ig S e m i c o n d u c t o r s Remote Control The U431xB IC family is designed to realize a lowcurrent UHF remote control system. This system is flexible with regard to amplitude or frequency modula­ tion, different transmission coding and a wide range of

S852T

Abstract: BF579 T0-50 BF964S BF96 BFP183T
Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15