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    BF96 Search Results

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    BF96 Price and Stock

    Vishay Intertechnologies BF961

    Power LDMOS Transistor N-Channel 20V 0.03A 4-Pin TO-50 - Bulk (Alt: BF961)
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    Avnet Americas BF961 Bulk 2,000
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    Newark BF961 Bulk 2,000
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    Telefunken Semiconductor GmbH & Co Kg BF964

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    Bristol Electronics BF964 231
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    Quest Components BF964 184
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    Siemens BF964S

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    Bristol Electronics BF964S 54
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    ComSIT USA BF964S 250
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    Telefunken Microelectronics Gmbh BF961

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    Bristol Electronics BF961 11
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    Others BF966S

    AVAILABLE EU
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    ComSIT USA BF966S 1,125
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    BF96 Datasheets (118)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF96 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BF960 Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF960 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BF960 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BF960 Unknown Cross Reference Datasheet Scan PDF
    BF960 Unknown Cross Reference Datasheet Scan PDF
    BF960 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BF960 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF960 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF960 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF960 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF960 Philips Components Philips Data Book Scan Scan PDF
    BF960 Philips Semiconductors SILICON N-CHANNEL DUAL GATE MOS-FET Scan PDF
    BF960 Vishay Telefunken N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE Scan PDF
    BF960S Unknown Cross Reference Datasheet Scan PDF
    BF960S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF960S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF960S Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF960S Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF961 Siemens Cross Reference Guide 1998 Original PDF

    BF96 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BF964S

    Abstract: BF964 BF964SA BF964SB
    Text: BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original     		BF964S BF964S D-74025 20-Jan-99 BF964 BF964SA BF964SB PDF

    BF961

    Abstract: BF961A BF961B
    Text: BF961 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz. Features D Integrated gate protection diodes


    Original     		BF961 BF961 D-74025 20-Jan-99 BF961A BF961B PDF

    BF964S

    Abstract: BF964SA BF964SB J02-1
    Text: BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original     		BF964S BF964S D-74025 20-Jan-99 BF964SA BF964SB J02-1 PDF

    BF966S

    Abstract: BF966SA BF966SB
    Text: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance


    Original     		BF966S BF966S D-74025 23-Jan-97 BF966SA BF966SB PDF

    BF966

    Abstract: No abstract text available
    Text: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original     		BF966S BF966S D-74025 20-Aug-04 BF966 PDF

    bf-961

    Abstract: No abstract text available
    Text: BF961 VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original     		BF961 BF961 D-74025 20-Aug-04 bf-961 PDF

    TO50 package

    Abstract: BF966 BF966S
    Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		BF966S 2002/95/EC 2002/96/EC BF966S BF966SA BF966SB BF966d D-74025 TO50 package BF966 PDF

    BF961

    Abstract: BF961A BF961B 100MHz-500MHz
    Text: BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for FM- and VHF TV-tuners up to 300 MHz. Features D Integrated gate protection diodes


    Original     		BF961 BF961 D-74025 16-Jan-97 BF961A BF961B 100MHz-500MHz PDF

    BF964S

    Abstract: BF964SA BF964SB
    Text: BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes


    Original     		BF964S BF964S D-74025 20-Jan-99 BF964SA BF964SB PDF

    BF964

    Abstract: BF964SA BF964S BF964SB TO50 package
    Text: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance


    Original     		BF964S BF964SA BF964SB BF964SA BF96s D-74025 BF964 BF964S BF964SB TO50 package PDF

    TO50 package

    Abstract: BF964S
    Text: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		BF964S 2002/95/EC 2002/96/EC BF964S BF964SA BF964SB 08-Apr-05 TO50 package PDF

    BF961

    Abstract: BF961A BF961B
    Text: BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for FM- and VHF TV-tuners up to 300 MHz. Features D High AGC-range D Low feedback capacitance


    Original     		BF961 BF961 D-74025 16-Jan-97 BF961A BF961B PDF

    2804SLS2

    Abstract: BF966 BF966S BF966SA BF966SB
    Text: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes


    Original     		BF966S BF966S D-74025 20-Jan-99 2804SLS2 BF966 BF966SA BF966SB PDF

    BF964SA

    Abstract: BF964S BF964SB TO50 package BF964
    Text: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		BF964S 2002/95/EC 2002/96/EC D-74025 15-Apr-05 BF964SA BF964S BF964SB TO50 package BF964 PDF

    BF961

    Abstract: BF961A BF961B
    Text: BF961 Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz. Features D Integrated gate protection diodes


    Original     		BF961 BF961 D-74025 20-Jan-99 BF961A BF961B PDF

    BF966S

    Abstract: BF966SA BF966SB 0V128
    Text: BF966S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes


    Original     		BF966S BF966S D-74025 20-Jan-99 BF966SA BF966SB 0V128 PDF

    Untitled

    Abstract: No abstract text available
    Text: -95D7< AF=D9 -=F9 BAF57F $. M $AH9EFBDE M *D9EE B7G@9AF -95D7< M *57>5;9 -95D7< M *5D5@9FD=7 -95D7< M DBEE ,9:9D9A79 -95D7< M "D99A ,B#- M 5?7G?5FBDE M .<9D@5? 5F5 M ,9?=56=?=FK #B@9  *DB8G7FE  ?B7> .=@=A; 9H=79E  * BF96BB> -9DH9D ?B7>E  ?B7> -KAF<9E=L9D 6K <=CE9F 09A8BD  9E>FBC <=CE9FE 


    Original     		-95D7< BAF57F 9D9A79 BF96BB> 09A8BD CDB79EEBDE PDF

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


    OCR Scan     		BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T PDF

    S S 850-03

    Abstract: No abstract text available
    Text: BF964S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages especially V H F TV-tuners. Features • Integrated gate protection diodes


    OCR Scan     		BF964S BF964S 20-Jan-99 S S 850-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF964S _ J \_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r V H F applications in television tuners. The device is also suitable for use in professional


    OCR Scan     		BF964S 003ST30 PDF

    BF960

    Abstract: transistor BF960 BF-960 SOT103 mosfet depletion UHF Dual Gate mosfet tetrode
    Text: b3E D bbSB'iSM 00742=57 E2S m s I C 3 • BF960 NAPC/PHILIPS SEMICOND FOR D E T A ILE D IN FO R M ATIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET D e p le tio n ty p e fie ld -e ffe c t tra n sisto r in a plastic X-package w ith source and substrate interconnected,


    OCR Scan     		BF960 BF960 transistor BF960 BF-960 SOT103 mosfet depletion UHF Dual Gate mosfet tetrode PDF

    BF966S

    Abstract: transistor BG 23
    Text: 7 1 1 DÖ2 b 0 0 1 3 7 5 4 2 b l 3 M PHIN BF966S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.


    OCR Scan     		711002b BF966S 7Z80878 0Db754fci BF966S transistor BG 23 PDF

    mosfet BF964

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DbE D fc.b53131 0012156 b • u I _ a BF964: _: T-3 I-2 S' SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for v.h.f. applications in television tuners, especially in r.f. stages and mixer stages in S-channel


    OCR Scan     		b53131 BF964: mosfet BF964 PDF

    BF966

    Abstract: bf966 TRANSISTOR k 246 transistor fet sot103
    Text: N AUER PHILIPS/DISCRETE ObE D • bt.S3T31 O D IS TTE ■ BF966 A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effeot transistor in a plastic X-package w ith source and substrate Interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.


    OCR Scan     		b53131 BF966 800MHz BF966 bf966 TRANSISTOR k 246 transistor fet sot103 PDF