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    IRF23 Search Results

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    IRF23 Price and Stock

    Rochester Electronics LLC IRF234

    N-CHANNEL HERMETIC MOS HEXFET
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    DigiKey IRF234 Bulk 297
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    Vicor Corporation VI-RF233-CVYX

    VI-RF233-CVYX 15V 24V 24V 150W
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    Vicor Corporation VI-RF232-CXXX

    VI-RF232-CXXX 15V 24V 15V 75W
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    NJ SEMI IRF230

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF230 3,842 1
    • 1 $13.2
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    • 100 $12.1836
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    Vishay Siliconix IRF230

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    Bristol Electronics IRF230 8
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    Find more IRF23 price and stock on Findchips.com

    IRF23 Datasheets (121)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF230 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF230 International Rectifier HEXFET Power Mosfet Original PDF
    IRF230 Intersil 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 ?, N-Channel Power MOSFETs Original PDF
    IRF230 Semelab N-Channel Enhancement Mode High Voltage Power MOSFET Original PDF
    IRF230 Fairchild Semiconductor N-Channel Power MOSFETs, 12A, 150-200 V Scan PDF
    IRF230 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF230 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF230 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. Scan PDF
    IRF230 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF230 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF230 Motorola Switchmode Datasheet Scan PDF
    IRF230 Motorola European Master Selection Guide 1986 Scan PDF
    IRF230 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF230 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF230 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF230 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF230 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF230 Unknown FET Data Book Scan PDF
    IRF230 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF230 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ...

    IRF23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF230

    Abstract: No abstract text available
    Text: IRF230 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)


    Original     		IRF230 204AA) 00A/ms IRF230 PDF

    irf234 n

    Abstract: TA17413
    Text: IRF234, IRF235, IRF236, IRF237 S E M I C O N D U C T O R 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF234, IRF235, IRF236, IRF237 TA17413. irf234 n TA17413 PDF

    IRF232

    Abstract: IRF230 IRF231 IRF233 TB334
    Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF230, IRF231, IRF232, IRF233 IRF232 IRF230 IRF231 IRF233 TB334 PDF

    irf234 n

    Abstract: irf*234 n IRF236 IRF234 IRF237 IRF235 TB334
    Text: IRF234, IRF235, IRF236, IRF237 Semiconductor 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF234, IRF235, IRF236, IRF237 irf234 n irf*234 n IRF236 IRF234 IRF237 IRF235 TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF233R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D)5 @Temp (øC)100 IDM Max (@25øC Amb)32 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		IRF233R PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF237 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)275 V(BR)GSS (V)20 I(D) Max. (A)6.5 I(DM) Max. (A) Pulsed I(D)4.1 @Temp (øC)100 IDM Max (@25øC Amb)26 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		IRF237 PDF

    irf230

    Abstract: IRF2301 irf232
    Text: IRF230, IRF231, IRF232, IRF233 S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF230, IRF231, IRF232, IRF233 TA17412. irf230 IRF2301 irf232 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF233 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D)5 @Temp (øC)100 IDM Max (@25øC Amb)32 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		IRF233 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF236 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)275 V(BR)GSS (V)20 I(D) Max. (A)8.1 I(DM) Max. (A) Pulsed I(D)5.1 @Temp (øC)100 IDM Max (@25øC Amb)32 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		IRF236 PDF

    IRF230

    Abstract: No abstract text available
    Text: IRF230 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)


    Original     		IRF230 204AA) IRF230" IRF230 IRF230-JQR-B IRF230SMD IRF230SMD-JQR-B IRF230X O276AB) PDF

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent PDF

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


    OCR Scan     		DD3711b T-39-01 CMD8 PDF

    IRF232

    Abstract: IRF233
    Text: FIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF232,233 8.0 AMPERES 200,150 VOLTS


    OCR Scan     		IRF232 00A//usec, IRF233 PDF

    250M

    Abstract: IRF240
    Text: electrical characteristics T q - 2 5 ° C (unless otherwise specified) CHARACTERISTIC [ off characteristics Drain-Source Breakdown Voltage IRF230/D86DN2 (VGS = 0V, lD = 250 ,uA) IRF231/D86EM2 Zero Gate Voltage Drain Current (Vps = Max Rating, VGs = 0V, T c = 25°C)


    OCR Scan     		IRF230/D86DN2 IRF231/D86EM2 00A//usec, 250M IRF240 PDF

    irf*234 n

    Abstract: IRF235 sm 4205 IRF234d GE-X8
    Text: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated


    OCR Scan     		IRF234, IRF235 IRF236, IRF237 IRF235, IRF237 irf*234 n sm 4205 IRF234d GE-X8 PDF

    MTP20N10

    Abstract: 1RF531
    Text: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA


    OCR Scan     		2N67S5 2N6756 IRF130 IRF131 IRF132 IRF133 IRF530 1RF531 IRF532 IRF533 MTP20N10 PDF

    IRF150 To220 package

    Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
    Text: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232


    OCR Scan     		Q0D01b3 IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF150 To220 package irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF234, IRF235, IRF236, IRF237 h a r r is SEUIC0NDUCT0R 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRF234, IRF235, IRF236, IRF237 1RF234, RF236, RF237 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRF230, IRF231, IRF232, IRF233 PDF

    irf*234 n

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 40E » • 430 2 2 7 1 GOBM'RQH b « H A S 33 HARRIS IR F234, IRF235 IR F236, IR F237 August 1991 N-Channel Power MOSFETs Avalanche-Energy Rated l\ Features Package T 0 -2 0 4 A A • 8.1A and 6 .SA, 2 7 5 V - 2 5 0V • rD S o n =


    OCR Scan     		IRF235 IRF234, IRF235, IRF236, IRF237 RF234, irf*234 n PDF

    sm 0038

    Abstract: 250M IRF230 IRF231
    Text: F U IRF230.231 D86DN2,M2 T 9.0 AMPERES 200,150 VOLTS Rd S ON = 0.4 n RELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRF230 P86PN2 00A///sec, sm 0038 250M IRF231 PDF

    Equivalent IRF 44

    Abstract: sony 2sj54 VN0109N3 irf 80 n BUZ44 VN0104N5 2SJ54 irf 44 n VN0108N2 VN0104N1
    Text: Siliconix 1-1? f l CO CO COCO Ol o LL. U . t t ù i • ■ N M C O M «M O LL. U . IRF230 ■ IRF231 - IRF232 ■ IRF233 IRF630 ■ IRF631 - IRF632 ■ IRF633 200VMOSPOWER These power FETs are designed especially for switching regulators, power converters,


    OCR Scan     		O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 Equivalent IRF 44 sony 2sj54 VN0109N3 irf 80 n BUZ44 VN0104N5 2SJ54 irf 44 n VN0108N2 VN0104N1 PDF

    ZO 150

    Abstract: dg1u IRF230 1RF232 IRF231 IRF232 IRF233 IRF23 ic l00a S101
    Text: 01 J E 1 3fl7S0öl DG1Ü2Ö4 S | ~ 0 ^ 3 *9 -/I SOLID STATE 01E 18284 3875081 G E a ta n a a ra ro w e r M O S FE Ts IRF230, IRF231, IRF232, IRF233 File Number 1568 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C EM EN T MODE N-Channel Enhancement-Mode


    OCR Scan     		IRF230, IRF231, IRF232, IRF233 50V-200V IRF232 IRF233 IF230 ZO 150 dg1u IRF230 1RF232 IRF231 IRF23 ic l00a S101 PDF

    irf*234 n

    Abstract: TA17413
    Text: IRF234, IRF235, IRF236, IRF237 h a r r is 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRF234, IRF235, IRF236, IRF237 TA17413. andRF234, RF236, RF237 irf*234 n TA17413 PDF