IRF150 Search Results

IRF200

Abstract: IRF100 20 k ohm 400W resistor irf500 IRN100S IRF150-IRF500 IRF400 IRF150 IRF50 IRF300
Contextual Info: POWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED IRN50-IRN150 IRF150-IRF500 Features and Applications Non-inductive, flat shaped aluminum housed wire wound fixed resistors with 50W to 500W. Minimum resistance of 1ohm, +/-0.5% tolerance available.

mosfet vgs 5v

Abstract: AN-1005
Contextual Info: PD-95438 IRF1503PbF AUTOMOTIVE MOSFET Typical Applications O O O HEXFET Power MOSFET 14V Automotive Electrical Systems 14V Electronic Power Steering Lead-Free D VDSS = 30V Features O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

Contextual Info: IRF150 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)

circuits of IRF150

Abstract: MOSFET IRF150 IRF 543 MOSFET irf150 JANTX2N6764 JANTXV2N6764
Contextual Info: PD - 90337F IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A The HEXFETtechnology is the key to International

circuits of IRF150

Abstract: IRF150-152
Contextual Info: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*

IRF150 To220 package

Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
Contextual Info: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232

IRF 5730

Abstract: IRF1503L IRF1503S
Contextual Info: PD - 95432 IRF1503SPbF IRF1503LPbF Typical Applications l l l HEXFET Power MOSFET 14V Automotive Electrical Systems 14V Electronic Power Steering Lead-Free D VDSS = 30V Benefits l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF150

Abstract: irf 151 IRF152 irf 150 IRF151
Contextual Info: r z 7 SGS-THOMSON * JÆ. M g @ii[L[I ¥(MM(gS IRF 150 -151 IRF 152-153 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RDS(on Id IRF150 100 V 0.055 n 40 A IRF151 60 V 0.055 n 40 A IRF152 100 V 0.08 « 33 A IRF153 60 V 0.08 fi 33 A • 60-100 VOLTS - FOR DC/DC CONVERTERS

AN-1005

Contextual Info: PD-95438A IRF1503PbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D VDSS = 30V Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Package outline To220ab

Contextual Info: IRF1503PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584)

IRF1503L

Abstract: IRF1503S
Contextual Info: PD - 94494A IRF1503S IRF1503L HEXFET Power MOSFET Typical Applications ● ● 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Benefits ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF150

Abstract: circuits of IRF150 IRF150-153 IRF150 "on semiconductor"
Contextual Info: flM FAIRCHILD SEMICONDUCTOR • H B n fflB F J J R C g L D dF | 34t.cit374□□E7fl7D A IRF150-153 N-Channel Power MOSFETs, 40 A, 60 V/100 V H A Schlumberger Company Power And Discrete Division Description ' T-^Q-13 1 1 i TO-2Q4AE These devices are n-channel, enhancement mode, power

IRF162

Abstract: IRF152 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 IRF153
Contextual Info: Standard Power MOSFETs File Number 1»24 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V rDs on = 0.055 Ct and 0.08 Ci N -C H A N N E L E N H A N C E M E N T M O D E

IRFI50

Abstract: IRF150 DM160 D86FL2 irf151
Contextual Info: IRF150,151 D86FL2.K2 [F@MÌRì”[ ìfiS S > FIT HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.

IRF1503

Abstract: irf150
Contextual Info: PD-94526A IRF1503 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

TRANSISTORS 132 GD

Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
Contextual Info: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF 5730

Abstract: IRF1503S IRF1503L
Contextual Info: PD - 94494A IRF1503S IRF1503L HEXFET Power MOSFET Typical Applications ● ● 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Benefits ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

Contextual Info: im iF fi llll SEME IRF150SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 115 VDss 100V 0.25 3.0 ik 1 ^ ^DS(on) 0.070Q • HERMETICALLY SEALED SURFACE MOUNT PACKAGE i ' 1 1 FEATURES r t ^D(cont) o o> • SMALL FOOTPRINT - EFFICIENT USE OF

irf113

Abstract: IRF111 IRFI30 1RF48 IRF224 IRF48 1RF220 1RF9Z32 IR 310A IRF035
Contextual Info: - 250 - m € tt € Ta=25<1C f t Vds Vgs I d P d or * /CH * /CH 4- Vdg If 1RF9Z32 IRF48 IRF034 IRFQ35 1RF044 IRF045 1RF120 IRF121 IRF122 IRF123 IRFI30 IRF131 IRF132 IRFI33 IRF14Û IRF141 IRFI42 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223

Contextual Info: SEME IRF150SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

Contextual Info: PD - 94494 IRF1503S IRF1503L AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Benefits ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

IRF150

Abstract: IRF150 MOSFET MOSFET IRF150 IRF-150
Contextual Info: IRF150, IRF151, IRF152, IRF153 HARRIS S E M I C O N D U C T O R 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF150

Abstract: IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi
Contextual Info: 7964142 SAMSUNG SEMICONDUCTOR Tfl D e J 7Tti414E DD0SDÛ4 a f 98 D 0 5084 INC L' D T -SVIli N-CHANNEL POWER MOSFETS IRF150/151/152/153 FEATURES Low RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance

irf150

Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
Contextual Info: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,